微脉冲电子枪的初步实验研究

给出了微脉冲电子枪的模拟计算及其初步实验结果. 该电子枪采用铜铝镁合金作为冷阴极材料, 在以磁控管作为微波功率源的出束实验中得到了100mA/cm²的电流密度.实验结果与次级电子倍增解析计算和SEEG程序的模拟计算结果基本符合, 初步验证了微脉冲电子枪的基本原理, 为今后实验中得到更大的电流密度打下了基础.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

用拉盖尔-高斯激光对真空中电子直接加速

对用拉盖尔-高斯(LG)光束加速电子作了研究.结果表明，仅模指数为p和l=1的LG光束的纵向电场可用于加速电子.模指数为p和l=1的线偏振和圆偏振LG光束都对电子有加速效果.对轴上光场的相速度和群速度以及电子能量增益等物理特征作了讨论.给出了轴上光场的相速度和群速度、加速电位及电子能量增益等的解析表达式，并作了数值计算和分析. 关键词： 激光电子加速 拉盖尔-高斯光束 线偏振和圆偏振 能量增益     

The origin of the formation of cavities in galvanized coatings

The role of water‐soluble corrosion products on galvanized wires was examined. The samples used were industrial hot‐dip galvanized wires, which were exposed to the open air under all weather conditions for a relatively short time (6 and 12 months), in an urban environment close to the sea. The samples were studied by different methods, i.e. scanning electron microscopy (SEM), transmission electron microscopy (TEM), X‐ray diffraction (XRD) and optical microscopy (OM). Several phases were detected because of the galvanization procedure and the steel substrate. Furthermore, phases which were formed as a result of the reaction of zinc with the atmosphere were also detected. These were oxides like ZnO, carbonates like ZnCO₃ and hydrated Zn and Fe sulfates. Their presence influences the corrosion resistance of the wires, which finally, strongly depends on the solubility of the wires in water. The SO₄^2? compounds especially are very soluble and consequently are easily removed from the coating surface, leading to its degradation by the formation of cavities. In any case, their presence, even after a short period of exposure, implies that the coating is highly affected by the atmosphere of the modern city. Copyright © 2006 John Wiley & Sons, Ltd.     

40Ar+诱导无定形碳到金刚石纳米晶相变的研究

通过60 keV的⁴⁰Ar⁺辐照无定形碳靶合成了大量尺寸不同的金刚石纳米颗粒.高分辨透射电子显微镜配合能量色散X射线谱和电子衍射以及Raman谱分析的结果表明，这些嵌于具有扰动石墨结构薄膜中的纳米金刚石颗粒，其成核率很高(约为10¹³/cm²)，而且可以生长到较大的尺寸，有的甚至可以达到微米量级.对其相转变过程也进行了初步探讨. 关键词： 离子束 金刚石纳米晶 相变 透射电子显微镜     

二分量高温超导机理

用两种电子态,讨论了金属—绝缘相变、反铁磁性—金属相变,以及相分离、正常态—超导态相变、非费米液体行为、高Tc等 关键词： 两种电子态 格林函数 玻色化 高温超导     

低速高电荷态离子40Ar16+与云母表面作用中的电子发射研究

报道了由兰州ECR源提供的低速高电荷离子40Ar16 入射到云母表面产生的电子发射的实验测量结果.结果发现,电子发射产额Y与离子入射角ψ有近似1/tanψ的关系.基于经典过垒模型,我们对这一关系进行了理论分析.实验结果和理论结果相当符合,这就间接说明势能电子发射是低速高电荷态离子作用于表面发射电子的一个主要途径.     

The structure of monolayer SiO2 on Mo(1 1 2): A 2-D [Si-O-Si] network or isolated [SiO4] units?

In this letter, atomically resolved scanning tunneling microscopic (STM) images obtained from monolayer SiO₂/Mo(1 1 2) are presented. The results are consistent with a previously proposed structural model of isolated [SiO₄] units based on vibrational features observed by high-resolution electron energy loss spectroscopy (HREELS) and infrared reflection-absorption spectroscopy (IRAS), and oxygen species identified by ultra-violet photoemission spectroscopy (UPS). These results are inconsistent with a structural model that assumes a two-dimensional (2-D) [Si-O-Si] network. These data illustrate that a metal substrate, although coated with an oxide thin layer, can be directly imaged at the atomic-scale with STM.     

磁场下含结构缺陷多组分超晶格中的局域电子态和电子输运

在有效质量近似理论下，利用转移矩阵和有效垒高方法研究了有限磁场下含结构缺陷的多组分超晶格中局域电子态的性质.在考虑各组分层有效质量的失配时，外加磁场会导致磁耦合效应的出现.磁耦合效应不仅引起局域电子能级的量子化，并且随着朗道指数或磁场强弱的变化，局域能级及其局域程度都会发生显著移动，特别是对高能区域的局域电子态影响更大.此外，还计算了电子输运系数，讨论了含结构缺陷的三组分超晶格中局域电子能级与输运谱透射禁区中的共振透射峰的关系，发现两者之间有着很好的对应关系，为相应的实验研究提供了依据. 关键词： 超晶格 局域电子态 磁场