Analysis of ALD-processed thin films by ion-beam techniques

This review introduces the possibilities of ion-beam techniques for the analysis of thin films and thin-film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOF-ERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).Dedicated to the memory of Wilhelm Fresenius     

Preparation and characterization of the LiInSe2 thin films

Summary p-type LiInSe₂ films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions are demonstrated. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Plasma chemical vapor deposition of TiN

Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater than 2000 kg/mm² (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness, and microstructures has been studied.     

试论高比能量电池进展

在综述电化学近５０年来比能量提高情况的基础上，讨论了现代科技发展对电池比能量的要求，以及当今电池能在多大程度上满足这些要求，并讨论了进一步提高电池比能量的可能性及可能途径．     

Dependence of chemical composition and bonding of amorphous SiC on deposition temperature and the choice of substrate

Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 °C. XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 °C to 650 °C. Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 °C. Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 °C on both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp² and sp³ C-C/C-H bonds was identified.     

氢气流量对混合物理化学气相沉积法制备MgB_2超薄膜的影响

用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)制备了MgB2超薄膜.在背景气体压强、B2H6的流量和成膜时间等条件一定的情况下,当氢气的流量从200到400sccm范围内变化时,观察了其对成膜的影响.结果显示,随氢气流量增大,膜表面粗糙度增大,同时膜面的连接性变好,伴随着样品的超导转变温度得到提高.对于平均厚度是10nm和15nm的样品,氢气流量分别是200sccm和300sccm时,Tc分别是26K和33K与28K和37K.     

p型GaN低温粗化提高发光二极管特性

利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP2Mg)和三甲基镓(TMGa)物质的量比([CP2Mg]/[TMGa])在1.4×10-3—2.5×10-3范围内,随[CP2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP2Mg]/[TMGa]为2.5×10-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP2Mg]/[TMGa]为2.5×10-3的p型GaN层制备的发光二极管,在注入电流为20mA时,输出光强提高了17.2%.     

纳米TiO_2薄膜的低温等离子体制备技术

以四氯化钛为源物质,氩气为载气,氧气为反应气体,利用低温等离子体增强化学气相沉积在硅基表面制备出了TiO2薄膜。使用场发射扫描电子显微镜、X射线衍射仪等检测分析表征TiO2薄膜的性能与性质,并探讨了工艺条件如基片材料、沉积时间和基片温度对薄膜性能的影响。结果表明:制备的薄膜表面光滑均匀,结构致密,最小晶粒尺寸约15 nm;薄膜的晶型主要依赖于沉积温度,低于300℃沉积的薄膜是无定形的,300℃之上沉积的薄膜是锐钛矿结构。     

光学薄膜的激光损伤研究进展

从理论、实验两方面对薄膜的激光损伤机理和提高损伤阈值的手段进行了回顾。概括了现有理论模型及其适用范围,对缺陷的行为进行了多方面的论述,重点比较了各种制备方法及后处理手段的特点,分析了主要工艺参数对薄膜损伤阈值的影响。结合本实验室及国内外同行的工作,对溶胶-凝胶法制备高损伤阈值薄膜的工艺进行了总结。从吸收、热传导、抗拉强度等角度对物理膜和化学膜在结构与性能上进行了比较,提出了从化学键、成膜过程等方面分析损伤机理的建议,并结合真空污染、亚表面损伤等新问题提出了未来工作的发展方向。     

对巯基苯甲酸在电化学沉积金膜表面的SERS研究

SERS技术由于具有高灵敏度的表面效应,能够检测吸附在金属表面的单分子层或亚单分子层的分子,并能给出丰富的分子结构信息,因而己被广泛应用于界面科学以及定性和定量分析科学领域之中。本文在制备电化学沉积金纳米薄膜的基础上,利用扫描电镜观察金纳米薄膜的形貌,通过分析对巯基苯甲酸在电化学沉积金膜表面的SERS光谱,研究对巯基苯甲酸在金纳米薄膜表面的吸附方式。由SERS光谱分析,我们推断出对巯基苯甲酸可能通过羧基和S原子共同作用吸附在金纳米颗粒表面,且苯环平面可能与金薄膜表面成一定倾斜角。