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931.
在综述电化学近50年来比能量提高情况的基础上,讨论了现代科技发展对电池比能量的要求,以及当今电池能在多大程度上满足这些要求,并讨论了进一步提高电池比能量的可能性及可能途径. 相似文献
932.
Li Wang 《Journal of Non》2011,357(3):1063-1069
Amorphous SiC has superior mechanical, chemical, electrical, and optical properties which are process dependent. In this study, the impact of deposition temperature and substrate choice on the chemical composition and bonding of deposited amorphous SiC is investigated, both 6 in. single-crystalline Si and oxide covered Si wafers were used as substrates. The deposition was performed in a standard low-pressure chemical vapour deposition reactor, methylsilane was used as the single precursor, and deposition temperature was set at 600 and 650 °C. XPS analyses were employed to investigate the chemical composition, Si/C ratio, and chemical bonding of deposited amorphous SiC. The results demonstrate that these properties varied with deposition temperature, and the impact of substrate on them became minor when deposition temperature was raised up from 600 °C to 650 °C. Nearly stoichiometric amorphous SiC with higher impurity concentration was deposited on crystalline Si substrate at 600 °C. Slightly carbon rich amorphous SiC films with much lower impurity concentration were prepared at 650 °C on both kinds of substrates. Tetrahedral Si-C bonds were found to be the dominant bonds in all deposited amorphous SiC. No contribution from Si-H/Si-Si but from sp2 and sp3 C-C/C-H bonds was identified. 相似文献
933.
用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)制备了MgB2超薄膜.在背景气体压强、B2H6的流量和成膜时间等条件一定的情况下,当氢气的流量从200到400sccm范围内变化时,观察了其对成膜的影响.结果显示,随氢气流量增大,膜表面粗糙度增大,同时膜面的连接性变好,伴随着样品的超导转变温度得到提高.对于平均厚度是10nm和15nm的样品,氢气流量分别是200sccm和300sccm时,Tc分别是26K和33K与28K和37K. 相似文献
934.
利用金属有机物化学气相沉积技术在蓝宝石衬底上低温生长GaN:Mg薄膜,对不同源流量的GaN:Mg材料特性进行优化研究.研究表明二茂镁(CP2Mg)和三甲基镓(TMGa)物质的量比([CP2Mg]/[TMGa])在1.4×10-3—2.5×10-3范围内,随[CP2Mg]/[TMGa]增加,晶体质量提高,空穴浓度线性增加.当[CP2Mg]/[TMGa]为2.5×10-3时获得空穴浓度与在较高温度生长获得的空穴浓度相当,且薄膜表面较粗糙.采用[CP2Mg]/[TMGa]为2.5×10-3的p型GaN层制备的发光二极管,在注入电流为20mA时,输出光强提高了17.2%. 相似文献
935.
936.
从理论、实验两方面对薄膜的激光损伤机理和提高损伤阈值的手段进行了回顾。概括了现有理论模型及其适用范围,对缺陷的行为进行了多方面的论述,重点比较了各种制备方法及后处理手段的特点,分析了主要工艺参数对薄膜损伤阈值的影响。结合本实验室及国内外同行的工作,对溶胶-凝胶法制备高损伤阈值薄膜的工艺进行了总结。从吸收、热传导、抗拉强度等角度对物理膜和化学膜在结构与性能上进行了比较,提出了从化学键、成膜过程等方面分析损伤机理的建议,并结合真空污染、亚表面损伤等新问题提出了未来工作的发展方向。 相似文献
937.
对巯基苯甲酸在电化学沉积金膜表面的SERS研究 总被引:1,自引:1,他引:0
SERS技术由于具有高灵敏度的表面效应,能够检测吸附在金属表面的单分子层或亚单分子层的分子,并能给出丰富的分子结构信息,因而己被广泛应用于界面科学以及定性和定量分析科学领域之中。本文在制备电化学沉积金纳米薄膜的基础上,利用扫描电镜观察金纳米薄膜的形貌,通过分析对巯基苯甲酸在电化学沉积金膜表面的SERS光谱,研究对巯基苯甲酸在金纳米薄膜表面的吸附方式。由SERS光谱分析,我们推断出对巯基苯甲酸可能通过羧基和S原子共同作用吸附在金纳米颗粒表面,且苯环平面可能与金薄膜表面成一定倾斜角。 相似文献
938.
Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates 下载免费PDF全文
<正>Deposition patterns of tetracyanoquinodimethane(TCNQ) molecules on different surfaces are investigated by atomic force microscopy.A homemade physical vapour deposition system allows the better control of molecule deposition. Taking advantage of this system,we investigate TCNQ thin film growth on both SiO_2 and mica surfaces.It is found that dense island patterns form at a high deposition rate,and a unique seahorse-like pattern forms at a low deposition rate.Growth patterns on different substrates suggest that the fractal pattern formation is dominated by molecule-molecule interaction.Finally,a phenomenal "two-branch" model is proposed to simulate the growth process of the seahorse pattern. 相似文献
939.
Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors 下载免费PDF全文
SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results. 相似文献
940.
Nadezhda V. Vasilieva Irina G. Irtegova Nina P. Gritsan Anton V. Lonchakov Alexander Yu. Makarov Leonid A. Shundrin Andrey V. Zibarev 《Journal of Physical Organic Chemistry》2010,23(6):536-543
In comparison with 2,1,3‐benzothia(selena)diazoles, electrochemical oxidation and reduction of their 4,5,6,7‐tetrafluoro derivatives and a number of related compounds were studied by cyclic voltammetry. For nine examples of this class, the first reduction peaks are reversible and corresponding radical anions (RAs) are long‐lived at 295 K in MeCN and especially in DMF. The oxidation peaks were irreversible and corresponding radical cations were not observed. Electrochemically generated RAs were characterized by EPR measurements and DFT calculations at the UB3LYP/6‐31+G(d) level. The spin density distribution in the RAs is analyzed in connection with effects of S substitution by Se and/or H by F. The prospects of the studied RAs in the design and synthesis of magnetically active materials are discussed. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献