离子束辅助沉积对类金刚石膜结构影响的计算机模拟

采用分子动力学(MD)模拟研究了离子束辅助沉积(1BAD)生长类金刚石(DLC)膜的物理过程.分 别选C₂分子和Ar离子作为沉积源和辅助沉积粒子.改变Ar的入射能量和到达比(A r／C)，研 究了它对DLC膜结构的影响.重点讨论了Ar辅助沉积引起表面原子的瞬间活性变化对薄膜结构 产生的影响.分析表明，由于Ar离子的轰击引起的能量和动量的传递，大大地增强了C原子在 表面的反冲动能及迁移概率，增加了合成薄膜的SP³键含量.研究结果和实验 观察一致，并从合成机理上给出了一些定量解释. 关键词： 类金刚石膜 离子束辅助沉积 分子动力学模拟     

Nonstationary mathematical models of the electrochemical processes in volumetric porous flow electrodes

Model representations of the nonstationary processes caused by the nonstationary electrolysis regimes on three-dimensional flow electrodes (TFEs) were developed. A change in the electrode and electrolyte parameters with time was taken into account. As an illustration of the efficiency of a model of two-dimensional electrochemical system, co-electrodeposition of two metals with hydrogen evolution on TFE was considered for the case of mutually perpendicular directions of current and electrolyte flow.     

Laser-induced Chemical VaporDeposited Nanosized Silicon Nitridewith Double Optical Beams

SupportedbyNationalNaturalScienceFiundationandGuangdongNSF.Intr0ductionSiliconnitridc(Si3N')isknownas"a1l-r0undchampi0n"am0ngtheceramicmateria1s.0wingt0itscharacteristies0fthermal-shockresistance,anti-0xi(1ati0n,c0rrosi0nresistance,andll4gh-temperaturestrcngth,Si3N4isnot0nlyago0dkindofhigh-temPeraturestructuralmaterials,buta1soan0wtyPe0ffuncti0nalmaterial.Becauseofitsexcellentproperties,nanosizedSi3N4isbeingc0nsidcredforapplicati0ninthefieldofccramicengines,microelec-tronies,spacescience…     

气相沉积法制Rh—Ti／SiO2催化剂的研究

助剂对铑催化一氧化碳加氢有很大影响,由于助剂有时会附在高表面积的担体上,而不是附在金属晶体上,从而削弱了助剂的作用。为提高助剂的分散度,Andersont等将含主、助剂金属元素的混合羰基簇化物浸渍到载体上,取得了较好的效果。但该法受到主、助剂原子     

等离子辅助镀膜技术

传统的电子束蒸发工艺提供了高速率的沉积，但由于成膜分子的能量较低，使沉积的薄膜排列密度很低，其性能和块材料区别很大，已有不少学者发现了很多金属和氧化物薄膜具有典型的柱状结构，薄膜的低排列密度造成了其光学常数和机械性能不如块状材料，近几年发展起来的高功率等离子体辅助镀膜技术解决了上述问题，本文报道了我国自己研制的等离子体源（GIS）的性能指标，用这个源所做的单层TiO2膜的成膜工艺与质量，以及用等离子辅助沉积的减反射膜的工艺。     

离子束辅助淀积低温微光学元件红外宽带增透膜

简要叙述了锗基片微光学元件红外宽带减反膜的设计与制作。着重介绍了离子束辅助淀积制备该膜系的过程，给出了用该方法制作８～１２μｍ波段的减反膜的测试曲线，它具有峰值透过率高，在设计波长范围内的平均透过率大于９７％以上，膜层附着好，可以切割和擦洗，可以在室温和１００Ｋ低温下反复循环使用。     

电泳沉积法制备V2O5薄膜的结构和性能

将V2O5溶胶电泳沉积在ITO导电基片上制备V2O5薄膜.运用X射线衍射和扫描电镜对薄膜的结构进行分析,通过紫外-可见光透射光谱和循环伏安法分别测试其光学和电化学性能.实验结果表明,电泳沉积V2O5薄膜具有致密的显微结构,薄膜厚度均匀、与基片的粘附性很好;循环实验中,薄膜呈现黄色到绿色的可逆变化,最大的透射率变化达到30%左右;薄膜具有很好的注入/退出可逆性和循环稳定性,50次循环效率仍能达到88.02%,并且循环后的薄膜与ITO导电玻璃的粘附性仍然很好,没有溶解现象;应用交流阻抗法计算Li+在V2O5薄膜着色过程的扩散系数为5.10×10-12cm2/s,表明该薄膜可以作为电致变色材料得到应用.     

Improvement of wettability and detergency of polymeric materials by excimer UV treatment

The 172 nm ultraviolet (UV) excimer light was exposed to polyethylene (PE), polypropylene, poly(ethylene terephthalate) and nylon 6 surfaces in ambient air. Changes in the contact angle and particle deposition in liquid due to UV treatment were investigated from the viewpoints of wettability and detergency. For all polymers, the wettability and the acid-base component of the surface free energy evaluated by the contact angle measurements increased remarkably by UV treatment of 1 min. From surface analyses of the polymer surfaces by X-ray photoelectron spectroscopy and atomic force microscopy, oxygen concentration was found to increase after UV treatment, whereas little topographical change was observed. The deposition of PE and nylon 12 particles onto the polymer surface was examined, in situ, in water, water/ethanol mixture, ethanol and n-heptane. Although the number of deposited particles was largely dependent on the kinds of the particle, the substrate and the liquid, a significant decrease in the deposition due to UV treatment was confirmed in any system.     

类金刚石和碳氮薄膜的电化学沉积及其场发射性能研究

利用电化学方法在室温下成功地沉积了类金刚石(DLC)薄膜和非晶CN_x薄膜，并 对制备条件进行了讨论.通过扫描电子显微镜、傅里叶变换红外光谱技术，分析了薄膜的表面形貌和化学结合状态.场发射测量结果表明：DLC膜和非晶CN_x的开启场分别为88和 10V/μm；并且在23V/μm的电场下，DLC膜和非晶CN_x膜的发射电流密度分别达到10 和037mA/cm². 关键词： 电化学沉积 类金刚石薄膜 x薄膜')" href="#">CN_x薄膜 场致电子发射     

Diamond surface modification following thermal etching of Si supported hydrogenated diamond films by DBr

In this work, we study the modification of hydrogenated diamond films deposited on silicon resulting from its exposure to DBr followed by an annealing above 600 K, using high resolution electron energy loss spectroscopy (HREELS). This procedure results in silicon carbide SiC formation within the diamond film, as evidenced by the observation of a loss peak at 117 meV and its first harmonic at 233 meV in HREEL spectra. This diamond surface modification is interpreted as resulting from the reaction of products of the silicon support thermally activated etching with hydrogenated diamond.