Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.     

Electrical, dielectric and surface wetting properties of multi-walled carbon nanotubes/nylon-6 nanocomposites

This paper reports that the multi-walled carbon nanotubes(MWCNT)/nylon-6 (PA6) nanocomposites with different MWCNT loadingshave been prepared by a simple melt-compounding method. Theelectrical, dielectric, and surface wetting properties of theCNT/PA6 composites have been studied. The temperature dependence ofthe conductivity of the CNT/PA6 composite with 10.0 wt{\%} CNTloading ($\sigma _{\rm RT} \sim 10^{-4}$ S/cm) are measured, andafterwards a charge-energy-limited tunnelling model (ln $\sigma (T)\sim T^{-1/2})$ is found. With increasing CNT weight percentage from0.0 to 10.0 wt%, the dielectric constant of the CNT/PA6composites enhances and the dielectric loss tangent increases twoorders of magnitude. In addition, water contact angles of theCNT/PA6 composites increase and the composites with CNT loadinglarger than 2.0 wt%even become hydrophobic. The obtainedresults indicate that the electrical and surface properties of thecomposites have been significantly enhanced by the embedded carbonnanotubes.     

Vertical assembly of carbon nanotubes for via interconnects

The via interconnects are key components in ultra-large scale integrated circuits(ULSI).This paper deals with a new method to create single-walled carbon nanotubes(SWNTs) via interconnects using alternating dielectrophoresis(DEP).Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition.The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%.We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes.     

The work function of hydrothermally synthesized UO2 and the implications for semiconductor device fabrication

The photoelectric work function of nearly stoichiometric (111) and (100) hydrothermally grown UO₂ was measured to be 6.28 ± 0.36 eV and 5.80 ± 0.36 eV, respectively. Candidate metals for electrical contacts are identified for both rectifying and non‐rectifying contacts based on work function, lattice compatibility, and electrical conductivity.     

丝电爆过程的电流导入机理

丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和"积瘤"主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免"积瘤"产生.     

Determining the resistance of X-pinch plasma

The current and the voltage of an X-pinch were measured. The inductance of the X-pinch was assumed to be a constant and estimated by the calculation of the magnetic field based on the well-known Biot-Savart's Law. The voltage of the inductance was calculated with L · di/dt and subtracted from the measured voltage of the X-pinch. Then, the resistance of the X-pinch was determined and the following results were obtained. At the start of the current flow the resistance of the exploding wires is several tens of Ohms, one order of magnitude, higher than the metallic resistance of the wires at room temperature, and then it falls quickly to about 1 , which reflects the physical processes occurring in the electrically exploding wires, i.e., a current transition from the highly resistive wire core to the highly conductive plasma. It was shown that the inductive contribution to the voltage of the X-pinch is less than the resistive contribution. For the wires we used, the wires' material and diameter have no strong influence on the resistance of the X-pinch, which may be explained by the fact that the current flows through the plasma rather than through the metallic wire itself. As a result, the current is almost equally divided between two parallel X-pinches even though the diameter and material of the wires used for these two X-pinches are significantly different.     

多孔介质BISQ模型中的慢纵波

着重研究了多孔介质BISQ模型中慢纵波的基本特性.给出了BISQ模型下慢纵波速度 和衰减的低频近似公式.与Biot理论对比，BISQ模型中慢纵波的衰减随频率降低急剧增大， 且随喷射流长度的减小而增加；相速度随喷射流长度的减小而增加，其低频极限值不是零； 孔隙流体位移与固相骨架位移之比的幅值随喷射流长度的增加而减小，其相位特点与Biot模 型预测的不同；在流体与孔隙介质的边界上可产生更大的渗流.为对比，同时也给出快纵波 的行为.依据BISQ模型可推断：非黏滞流体饱和孔隙介质中不存在喷射流机理；BISQ模型中 关键词： 多孔介质 喷射流 慢纵波 动力协调     

矩形均匀电子束在激光介质中的能量沉积的模拟计算

本文主要论述了0.5MeV,单能垂直入射的电子束在三种不同密度的氟化氪准分子激光介质中的能量沉积。计算是采用Monte Carlo方法的MCSED程序,光轴方向采用周期性边界条件,因此能够给出平行于和垂直于电子束入射方向的沉积能量的空间分布。本文给出了在三种不同密度下的出射电子的角分布。用该程序对垂直入射的,初始能量为1MeV的电子在半无限大Al靶中的沉积能量的计算结果与ONETRAN程序的结果及实验结果的比较表明MCSED程序的计算结果是可靠的。     

散射介质超衍射极限技术研究进展

综述了已有散射介质超衍射极限聚焦和成像技术的研究现状及进展。首先介绍了这一领域的研究背景及意义,以及已有超衍射极限成像技术的发展现状;然后给出了应用于超衍射极限成像的散射介质定义;其次分析了时间反演技术在声学、微波领域聚焦上的应用,介绍了时间反演法在光学领域超衍射极限聚焦应用中的实现方法,总结了散射介质加入到光学系统中的作用,分析了利用反馈控制调节和光学相位共轭方法进行散射介质超衍射极限聚焦方法的特点;讨论了基于空域和空频域传输矩阵测量的散射介质宽场成像方法及在该目的下的散射介质制备方法;最后给出了散射介质光学超衍射极限成像技术研究前景及展望。     

混合物理化学气相沉积法制备MgB$lt;sub$gt;2$lt;/sub$gt;单晶纳米晶片的研究

利用混合物理化学气相沉积法在石墨衬底上制备出了晶形为六角结构、厚度不同、径向尺寸不一的MgB₂单晶纳米晶片. 利用纳米定向转移技术将此晶片转移到了碳支持膜铜网上, 以便对其精细结构等物性进行表征. 电输运测量和磁性测量结果都表明晶片具有超导电性: T_conset=38 K, T_c(0)=33 K. 扫描电子显微镜图像表明, 晶片表面平整、厚度分布在几个纳米到200 nm之间, 宽度从几微米到上百微米; 高分辨透射电镜图像显示出晶片具有周期性晶格条纹. 选区电子衍射数据与MgB₂已有的单晶衍射数据相符. 这些测量结果证实了其确为高质量单晶MgB₂超导纳米晶片. 本文不仅提出了一种全新的制备单晶MgB₂的方法, 也观察到了纳米尺度MgB₂单晶的零电阻现象, 为后续的磁通钉扎、纳米力学性能等领域的深入研究提供了合适的素材. 关键词： 2')" href="#">单晶MgB₂ 超导纳米晶片 零电阻 混合物理化学气相沉积法