静电场模拟实验中音频交流信号源之改进

本文介绍了两种新的信号源代替音频交流信号源的方法。     

Magnetization reversal observed by the deflection of magnetic actuator

A magnetic actuator consisting of a silicon oxide microcantilever and a silicon oxide plate deposited on ferromagnetic multilayer thin films is fabricated using electron beam lithography and electron beam evaporation, and placed in various magnetic fields to observe its flexure. The magnetic actuator is bent by magnetic torque produced by ferromagnetic multilayer thin films under an external magnetic field owing to the fabrication of a highly sensitive microcantilever and the design of elliptic ferromagnetic thin films with high magnetic shape anisotropy. The magnetic actuator is placed in four kinds of magnetic field directions to investigate the diversity of deflections; the angles between the easy axis of the ferromagnetic multilayer thin films and the direction of the external magnetic field are 90°, 70°, 45° and 20°.     

An AlGaN/GaN HEMT with reduced surface electric field and improved breakdown voltage

A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

爆炸电子发射初期阴极表面电场的研究

为了研究二极管爆炸电子发射初始阶段阴极表面复杂的物理现象及规律, 建立了由场致电子发射阴极构成的一维平板真空二极管物理模型,通过自行编程数值求解泊松方程, 考虑了发射出的电子对阴极表面电场的非线性影响,自洽模拟得到了阴极表面电场随时间的变化情况. 模拟结果表明,爆炸电子发射初期,阴极表面电场随时间的增加而呈现出不断振荡的规律, 且振荡幅度越来越小,最终到达一个稳态的值,二极管两极板之间的外加电场越大, 阴极表面稳态电场的绝对值越大;电场增强系数越大,阴极表面稳态电场的绝对值越大. 在整个时间演变过程中,阴极表面的实际电场强度决定着阴极发射的电流密度大小, 反过来阴极发射的电流密度又会影响到阴极表面的电场.     

用杂化CIS-DFT方法研究外电场对乙烯激发态的影响

采用杂化CIS-DFT方法研究了外电场对乙烯分子基态和激发态性质的影响，结果表明外电场对分子几何结构，总能量，偶极矩，极化率，振子强度和激发能有显著影响。CIS-DFT的优点在于它能确定外场下分子的对称性并且给出正确的激发顺序以及分子轨道的电子组态，由此导出乙烯分子的激发态，计算结果与实验一致。首次研究了乙烯分子的外电场效应。与其他从头算方法相比，杂化CIS-DFT方法计算精度和效率相对较高，可用于研究大分子体系。     

电偏转扫描法测量高电荷态ECR源发射度

成功地研制了一套适合于低能离子束流发射度测量的电偏转扫描探测器.对该探测器的原理和结构作了较详细的描述,并给出该探测器对兰州近代物理研究所高电荷态ECR源LECR3引出离子束流发射度的测量结果.典型结果为:在引出高压为15.97kV,引出束流为190μA时,O⁴⁺水平发射度(x方向)为137πmm·mrad,垂直发射度(y方向)为120πmm·mrad(包括90%束流).最后,对测量结果作了一些分析和讨论.     

CO2激光自差信号的功率谱研究

利用10MHz高速数据采集和处理系统分析了激光自差信号的功率谱.其功率谱分布在低频区;当多普勒频移增大时,自差信号的带宽增加,功率谱对频率的积分收敛于信号的功率.实验结果还表明,利用高速数据采集和处理的分析方法,比频谱分析仪有更多的优点.     

EHD两相系统中的电场数值模拟

针对均匀电场作用下两相系统中的单个离散相周围电场分布情况,建立了数学模型.在建模过程中,考虑了离散相的存在对电场分布的影响.通过求解电场控制方程,得到了均匀电场作用下离散相周围及其内部的电势及电场分布的数值解,并理论验证了该数值解的准确性.     

地区电力需求预测研究

本文在分析影响预测准确原因的基础上．指出预测工作必须定量与定性相结合．针对地区电力消费需求的特点，提出了适宜于定性分析的四个预测模型．运用上述模型，实际预测结果令人满意。     

导体表面电荷不均匀分布的数值计算

用积分法分析了被屏蔽导体表面的电荷分布,提出了一种具有特殊场域的求解电场 方法,为了求解在奇异点的积分,提出了一系列解析公式,可以避免复杂的数学处理,还分析了一个具体实例的临近效应,讨论了积分法的计算精度 。