双色制导用InGaAs探测器低温特性的研究

制备了平面结InGaAs短波红外探测器,分别测量了其在室温及液氮温区的响应光谱、电流～电压曲线和光生信号及噪声,发现其光生信号与室温测量值相比下降了大约50%.在液氮温区的测试结果表明,短波探测器的峰值响应率为Rvp=2.41(107V/W),峰值探测率Dp*=1.51(1012(cmHz)1/2/W.其透射谱的测量表明该探测器的透射率能够超过80%.这些指标能够满足红外双色探测系统的需求。     

Synthesis and Properties of Cupric Sulphate Doped Polyvinyl Pyrrolidone (PVP) Solutions

The optical, electrical and acoustical properties of polymer solutions based on polyvinyl pyrrolidone (PVP) doped with cupric sulphate (CuSO₄) were studied. The polymer solutions were prepared by varying the concentration of Cu in the PVP using a simple chemical route. The UV-visible spectroscopy results showed that the optical absorbance decreased with an increase in wavelength from 300 to 700 nm. The optical band gaps were found to decrease with addition of the Cu salt in the polymer. The refractive index also showed significant variation with the doping of the CuSO₄. The electrical conductivity of the polymer solutions was found to increase with temperature as well as concentration of Cu while the activation energy of electrical conduction decreased with concentration of Cu. The ultrasonic velocities of the polymer solutions were measured at a frequency of 1 MHz using an ultrasonic interferometer. The ultrasonic velocity and surface tension were increased while the adiabatic compressibility, acoustic impedance and intermolecular free length, the average distance between the surfaces of the coils of adjacent molecules, were decreased with increase in the concentration of CuSO₄ in the PVP.     

Franck–Condon Factors and r‐Centroids for the B–, C–, F–, and G–X Band Systems of YF Molecule

The Franck–Condon factors and r‐centroids, which are very closely related to relative transition probabilities, have been evaluated by a more reliable numerical integration procedure for the B¹π–X¹Σ⁺, C¹Σ⁺–X¹Σ⁺, F¹Σ⁺–X¹Σ⁺, and G¹π–X¹Σ⁺ band systems of the YF molecule, using suitable potentials.     

Manipulation of light at the nanoscale for high-performance spectroscopic and optical applications

In this paper, we explore the use of nanostructures for a number of fascinating applications. These applications based on nanostructures include (1) optical sensors, (2) nanopixel printing, (3) improving the resolution of imaging techniques, and (4) lithography. In the sensing field, nanostructures are exploited for advanced sensor performance, namely, the label-free and enhanced sensitivity of (1) the surface plasmon resonance sensor and (2) the extraordinary optical transmission sensor and (3) the high sensitivity and selectivity of surface-enhanced Raman spectroscopy. In addition, research using nanostructures for visual applications was introduced for (1) harnessing nanostructures for full-color pixel printing and (2) exploiting metallic nanostructures to enhance the imaging resolution under diffraction limits based on the plasmonic effect. Finally, we introduce low cost, high accuracy, and fast lithographic methods based on the plasmonic effect by exploiting metallic nanostructures.     

用弹性磁撞推导相对论公式一简法

介绍一种用完全弹性碰撞推导相对论动量公式的简法,在推导中始终未涉及质速关系。     

A3M2Ge3O12石榴石体系中Cr3+离子的宽带发射光谱

首次报告在Ａ３Ｍ２Ｇｅ３Ｏ１２∶Ｃｒ（Ａ＝Ｃｄ２＋,Ｃａ２＋;Ｍ＝Ａｌ３＋,Ｇａ３＋,Ｓｃ３＋）锗酸盐石榴石体系中,Ｃｒ３＋离子室温下的红—近红外（Ｒ—ＮＩＲ）宽发射带光谱性质。随位于八面体格位上的Ａｌ３＋→Ｇａ３＋→Ｓｃ３＋和十二面体格位上的Ｃｄ２＋→Ｃａ２＋组成顺序变化,室温下,Ｃｒ３＋离子的４Ｔ２→４Ａ２能级跃迁的Ｒ－ＮＩＲ宽发射带,发射峰及光谱的长波和短波边逐渐向低能长波边移动。这是由于晶场强度减弱,阳离子的离子半径增大的结果。在镉（钙）铝和镉（钙）镓锗酸盐体系中,少量Ｓｃ３＋取代八面体上的Ａｌ３＋和Ｇａ３＋时,可使Ｃｒ３＋的Ｒ－ＮＩＲ荧光发射强度增强。     

Band structure of even and ions of odd polyenes

The analysis of experimental data for singlet transitions (E _n) of even polyenes (I), cations (II) and anions (III) of odd polyenes show that for infinite chains E (I)/E (II)=E (I)/E (III) = 2:1. It is shown that the energy gap is equal for the three systems. In cases (II) and (III) there is a level (NBMO) in the gap which is vacant in (II) and occupied in (III). That is why the first optical transition in (II) and (III) depends on the semiwidth of the gap.     

Theoretical studies on the band structures of superconducting solid compounds: Nb3X (X=Si, Ge, Sn, Pb)

The band structures of several analogous superconducting A-15 type solid compounds, Nb3X (X=Si, Ge, Sn, Pb), have been calculated by use of the tight-binding method within the Extended Huckel approximation (EHT). By analysis of their energy bands, densities of states and crystal orbital overlap populations, the dependence of the superconducting transition temperatures (Tc) on the electronic structures and bondings is qualitatively elucidated.