Flat Complex Vector Bundles,the Beltrami Differential and W-Algebras

Since the appearance of the paper by Bilal et al. in 1991, it has been widely assumed that W-algebras originating from the Hamiltonian reduction of an SL(n,C)-bundle over a Riemann surface give rise to a flat connection, in which the Beltrami differential may be identified. In this Letter, it is shown that the use of the Beltrami parametrization of complex structures on a compact Riemann surface over which flat complex vector bundles are considered, allows the construction of the above mentioned flat connection. It is stressed that the modulus of the Beltrami differential is of necessity less than one, and that solutions of the so-called Beltrami equation give rise to an orientation-preserving smooth change of local complex coordinates. In particular, the latter yields a smooth equivalence between flat complex vector bundles. The role of smooth diffeomorphisms which induce equivalent complex structures is specially emphasized. Furthermore, it is shown that, while the construction given here applies to the special case of the Virasoro algebra, the extension to flat complex vector bundles of arbitrary rank does not provide generalizations of the Beltrami differential usually considered as central objects for such non-linear symmetries.     

Femtosecond laser near field ablation

The high field strength of femtosecond laser pulses leads to nonlinear effects during the interaction with condensed matter. One such effect is the ablation process, which can be initiated below the threshold of common thermal ablation if the excitation pulses are sufficiently short. This effect leads to structure formation, which is anisotropic because of the polarization properties of the near field and can result in pattern sizes below the resolution limit of light. These effects are explored by temporally resolved scattering methods and by post‐mortem analysis to show the non‐thermal and anisotropic nature of this process. The near‐field distribution of plasmon modes can be tailored to a large extent in order to obtain control of the pattern formation.     

Analysis and design of electromagnetic band gap structures with stratified and inhomogeneous media

In this study, a generalized and easy to use method based on Hill's equation and chain matrix concept is used to analyze the electromagnetic wave propagation in stratified dielectric and inhomogeneous media with arbitrary profiles.Numerical simulations are performed to compute the reflection and transmission of several Electromagnetic Bandgap (EBG) structures for various permittivity profiles and given polarization as well as incidence angles of driving fields.Multilayer structures are analyzed and optimized to enhance their selectivity performances. Obtained results agree excellently well with other published data.     

Cavity resonant mode in a metal film perforated with two-dimensional triangular lattice hole arrays

The transmission property of metallic films with two-dimensional hole arrays is studied experimentally and numerically. For a triangular lattice subwavelength hole array in a 150 nm thick Ag film, both cavity resonance and planar surface modes are identified as the sources of enhanced optical transmissions. Semi-analytical models are developed for calculating the dispersion relation of the cavity resonant mode. They agree well with the experimental results and full-wave numerical calculations. Strong interaction between the cavity resonant mode and surface modes is also observed.     

Formation of copper islands on a native SiO2 surface at elevated temperatures

A combination of in situ X-ray photoelectron spectroscopy analysis and ex situ scanning electron- and atomic force microscopy has been used to study the formation of copper islands upon Cu deposition at elevated temperatures as a basis for the guided growth of copper islands. Two different temperature regions have been found: (I) up to 250 °C only close packed islands are formed due to low diffusion length of copper atoms on the surface. The SiO₂ film acts as a barrier protecting the silicon substrate from diffusion of Cu atoms from oxide surface. (II) The deposition at temperatures above 300 °C leads to the formation of separate islands which are (primarily at higher temperatures) crystalline. At these temperatures, copper atoms diffuse through the SiO₂ layer. However, they are not entirely dissolved in the bulk but a fraction of them forms a Cu rich layer in the vicinity of SiO₂/Si interface. The high copper concentration in this layer lowers the concentration gradient between the surface and the substrate and, consequently, inhibits the diffusion of Cu atoms into the substrate. Hence, the Cu islands remain on the surface even at temperatures as high as 450 °C.     

Cu、N空位对Cu_3N的电子结构、电学和光学性能影响的第一性原理研究

本文采用基于密度泛函理论的第一性原理计算方法,研究了立方相Cu_3N晶体中含Cu、N空位体系的稳定性、电学、光学性能.研究结果表明含Cu空位和N空位体系的结构比较稳定,Cu空位和N空位降低了体系的导电性,但增加了体系的透射率;含Cu空位和N空位体系的禁带宽度均大于Cu_3N体系,说明实验中制备的Cu_3N有时表现为绝缘体的可能原因为体系中存在Cu空位或N空位.     

Co对单层MoS_2电子结构与磁性的影响

为了研究Co对单层MoS_2电子结构和磁性的影响,本文基于第一性原理,采用数值基组的方法计算了Co吸附式掺杂、Co替代式掺杂单层MoS_2的能带结构、态密度以及分析了其结构的稳定性.结果发现:Co替换式掺杂体系的形成能较低,实验上容易实现;Co在Mo位吸附的稳定性强于在S位吸附;Mo位吸附体系的总磁矩为0.999μB,其磁矩的主要来源于Co原子的吸附所贡献的0.984μB,Co原子的掺杂体系总磁矩为1.029μB,其磁矩的主要由Co原子替代掉一个Mo原子所贡献的磁矩为0.9444μB,相比于吸附体系,Co原子对磁矩的贡献率有所降低;无论是Co吸附在单层MoS_2表面还是Co直接替代掉Mo原子的掺杂体系,Co原子3d轨道的引入是引起单层MoS_2体系磁性的主要原因.     

第一性原理对(NaP_3)_n(n=1～5)团簇的几何结构和性质的研究

本文采用第一性原理研究了(NaP_3)_n(n=1~5)团簇的几何结构、能隙、电荷分布以及态密度.研究结果表明:NaP_3团簇为线型结构,是(NaP_3)_n(n=1~5)团簇中的基本单元,随着n增大,团簇转变为环状结构和空间结构;(NaP_3)_3团簇的能隙出现峰值,表明该团簇较其他团簇有较高的稳定性;(NaP_3)_3团簇中对于高能量区域的态密度是由Na 3s和P 3p轨道贡献,其中在费米附近的能量主要由P 3p轨道贡献,对于低能量区域的态密度主要由Na 3s轨道贡献;(NaP_3)_n(n=1~5)团簇中的Na原子电荷分布均为正值,表明电荷总体上是从Na原子转移到P原子.     

Two-dimensional function photonic crystals

In this paper, we have studied two-dimensional function photonic crystals, in which the dielectric constants of medium columns are the functions of space coordinates , that can become true easily by electro-optical effect and optical kerr effect. We calculated the band gap structures of TE and TM waves, and found the TE (TM) wave band gaps of function photonic crystals are wider (narrower) than the conventional photonic crystals. For the two-dimensional function photonic crystals, when the dielectric constant functions change, the band gaps numbers, width and position should be changed, and the band gap structures of two-dimensional function photonic crystals can be adjusted flexibly, the needed band gap structures can be designed by the two-dimensional function photonic crystals, and it can be of help to design optical devices.