外应力场下铁磁/反铁磁双层膜系统的铁磁共振性质

从系统能量出发，采用Smith和Beljers理论方法研究了铁磁/反铁磁双层膜系统在外应力场下的铁磁共振现象.本模型中铁磁薄层具有单轴磁晶各向异性和立方磁晶各向异性，而反铁磁层非常薄因而其能量可忽略.推导出了该系统的铁磁共振频率和频谱宽度的解析式.结果表明：外应力场仅在低磁场下对具有立方磁晶各向异性系统的铁磁共振有影响，且区分弱磁场和强磁场的临界场依赖于外应力场的方向. 关键词： 铁磁/反铁磁双层膜 交换偏置 铁磁共振 应力场     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

功率MOSFET的负偏置温度不稳定性效应中的平衡现象

通过对功率金属氧化物半导体场效应晶体管在静态应力下的负偏置温度不稳定性的实验研究, 发现器件参数的退化随时间的关系遵循反应扩散模型所描述的幂函数关系, 并且在不同栅压应力下, 实验结果中均可观察到平台阶段的出现. 基于反应扩散理论的模型进行了仿真研究, 通过仿真结果分析和验证了此平台阶段对应于反应平衡阶段, 并且解释了栅压应力导致平台阶段持续时间不同的原因. 关键词： 功率金属氧化物半导体场效应晶体管 负偏置温度不稳定性 反应扩散模型     

负偏压作用下染料敏化太阳电池界面及光电性能研究

太阳电池组件由于局部电压不匹配,其中部分电池可能较长时间工作在负偏压状态下,从而影响电池光电性能.借助拉曼光谱、电化学阻抗谱和入射单色光量子效率(IPCE)等测试手段,研究长期负偏压作用下染料敏化太阳电池光电性能的变化及其影响机理.拉曼光谱研究结果表明:电池在1000 h负偏压作用下,电解质中阳离子(Li⁺)会向光阳极(TiO₂电极)移动并嵌入TiO₂薄膜中;长期负偏压作用还会致使TiO₂/电解质界面阻抗增大和IPCE下降,导致电池开路电压升高和短路电流减小.通过加入苯并咪唑(BI)添加剂,经1000 h负偏压后电池的拉曼光谱实验表明,BI能在一定程度阻碍Li⁺的嵌入,电池具有较好的长期稳定性.不同负偏压下的老化实验进一步表明,通过加入添加剂能够使电池在长期负偏压下保持较好的稳定性. 关键词： 染料敏化 太阳电池 组件 负偏压     

两种χ2形式的等价性

通过矩阵计算证明了两种χ2形式的等价性,同时讨论了最小化估计值的有偏性. 利用简化的R值测量定量地检验了等价性的结论.     

光源偏振度对光纤陀螺零漂影响的研究

以Y波导集成光学调制器保偏型干涉式光纤陀螺作为研究对象,根据各光学元器件的参数建立了各器件的琼斯矩阵以及光路传输模型,在此基础上进行了光路偏振误差的理论分析。通过推导,得到了保偏型干涉式光纤陀螺的偏振误差表达式,并首次分析了光源偏振度对光纤陀螺零漂的影响。借助光源尾纤输出的光谱,对由0%~3%之间呈线性变化的偏振度以及对经实验测试的光源偏振度的实际值引起的偏振模式耦合误差的零漂值进行了仿真计算。结果表明,当光路中其它参数不变时,由光源偏振度变化引起的零漂值为0.001°/h,满足了高精度光纤陀螺的精度要求。     

脉冲直流偏压增强的高质量立方氮化硼薄膜的合成

采用磁增强活性反应离子镀系统成功地合成了立方氮化硼薄膜.通过给基片施加脉冲直流偏压以代替传统的射频偏压,增强了立方氮化硼的成膜稳定性,研究了基片的直流脉冲偏压、等离子体放电电流、通入气体流量比(Ar/N₂)和基片温度沉积参数对立方氮化硼薄膜形成的影响规律.结果表明:随着基片负偏压和放电电流的增大,薄膜中立方氮化硼的纯度提高,当基片负偏压为155V,放电电流为15A时,可获得几乎单相的立方氮化硼薄膜.基片温度为500℃和Ar/N₂流量比为10时,最有利于立方氮化硼 关键词： 立方氮化硼 活性反应离子镀 脉冲偏压     

The structure dependence of exchange bias in ferromagnetic/antiferromagnetic bilayers

The structure dependence of exchange bias in ferromagnetic/antiferromagnetic （FM/AF） bilayers has been investigated in detail by extending Slonczewski＇s ＇proximity magnetism＇ idea. Here three important parameters are discussed for FM/AF bilayers, i.e. interracial bilinear exchange coupling J1, interracial biquadratic （spin-flop） exchange coupling J2 and antiferromagnetic layer thickness tAF. The results show that both the occurrence and the variety of the exchange bias strongly depend on the above parameters. More importantly, the small spin-flop exchange coupling may result in an exchange bias without the interracial bilinear exchange coupling. However, in general, the spin-flop exchange coupling cannot result in the exchange bias. The corresponding critical parameters in which the exchange bias will occur or approach saturation are also presented.     

Nonparametric estimation of location parameter after a preliminary test on regression in the multivariate case

For a simple multivariate regression model, nonparametric estimation of the (vector of) intercept following a preliminary test on the regression vector is considered. Along with the asymptotic distribution of these estimators, their asymptotic bias and dispersion matrices are studied and allied efficiency results are presented.     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.