DKDP晶体的柱面形貌与缺陷分析

采用原子力显微镜观测全方位生长的DKDP晶体的{100}面形貌,发现有螺旋位错,由此推断DKDP晶体{100}面以螺旋位错机制生长;利用同步辐射X射线白光形貌术观测了DKDP晶体缺陷,探讨了不同生长条件及生长阶段对晶体完整性的影响.     

刃型位错和圆弧形刚性线夹杂的干涉效应

位错和夹杂的干涉效应对于理解材料的强化和韧化机理具有十分重要的意义。文中研究了晶体材料中刃型位错和多条共圆弧刚性线夹杂的干涉作用。利用Riemann—Schwarz反照原理和复势函数的奇性主部分析技术，得到了问题的一般解答；对于只含一条刚性线夹杂的情况，给出了复势函数的封闭形式解。由Peach-Koehler公式求出了作用在刃型位错上的位错力，并讨论了圆弧形刚性线夹杂对位错力的影响规律，发现弧形刚性线对刃型位错有很强的排斥作用。本文解答不但可作为格林函数获得任意分布位错的相应解答，而且可以用于研究刚性线夹杂和任意形状裂纹的干涉效应问题。     

宽板塑性弯曲成形过程中的板厚变化规律

根据宽板弯曲过程中的变形与应力分布特征，提出了一种计算弯曲过程中板料厚度随弯曲程度变化的新的近似解答方法．该方法基于塑性增量理论，应用塑性成形过程的体积不变假设和弯曲过程的平面假设．作为算例，得到了理想刚塑性材料的板料厚度、变薄系数以及应变中性层内移系数随板料弯曲内表面曲率半径变化的规律，并与实验数据进行了比较，两吻合良好．     

Discrete rearranging disordered patterns, part II: 2D plasticity, elasticity and flow of a foam

The plastic flow of a foam results from bubble rearrangements. We study their occurrence in experiments where a foam is forced to flow in 2D: around an obstacle; through a narrow hole; or sheared between rotating disks. We describe their orientation and frequency using a topological matrix defined in the companion paper (F. Graner, B. Dollet, C. Raufaste, and P. Marmottant, this issue, 25 (2008) DOI 10.1140/epje/i2007-10298-8), which links them with continuous plasticity at large scale. We then suggest a phenomenological equation to predict the plastic strain rate: its orientation is determined from the foam's local elastic strain; and its rate is determined from the foam's local elongation rate. We obtain a good agreement with statistical measurements. This enables us to describe the foam as a continuous medium with fluid, elastic and plastic properties. We derive its constitutive equation, then test several of its terms and predictions.     

A dislocation dynamics study of the strength of stacking fault tetrahedra. Part I: interactions with screw dislocations

We present a comprehensive dislocation dynamics (DD) study of the strength of stacking fault tetrahedra (SFT) to screw dislocation glide in fcc Cu. Our methodology explicitly accounts for partial dislocation reactions in fcc crystals, which allows us to provide more detailed insights into the dislocation–SFT processes than previous DD studies. The resistance due to stacking fault surfaces to dislocation cutting has been computed using atomistic simulations and added in the form of a point stress to our DD methodology. We obtain a value of 1658.9 MPa, which translates into an extra force resolved on the glide plane that dislocations must overcome before they can penetrate SFTs. In fact, we see they do not, leading to two well differentiated regimes: (i) partial dislocation reactions, resulting in partial SFT damage, and (ii) impenetrable SFT resulting in the creation of Orowan loops. We obtain SFT strength maps as a function of dislocation glide plane-SFT intersection height, interaction orientation, and dislocation line length. In general SFTs are weaker obstacles the smaller the encountered triangular area is, which has allowed us to derive simple scaling laws with the slipped area as the only variable. These laws suffice to explain all strength curves and are used to derive a simple model of dislocation–SFT strength. The stresses required to break through obstacles in the 2.5–4.8-nm size range have been computed to be 100–300 MPa, in good agreement with some experimental estimations and molecular dynamics calculations.     

Surface/interface effects on the formation of misfit dislocation in a core–shell nanowire

The misfit strain within the core of a two-phase free-standing core–shell nanowire resulting in the generation of an edge misfit dislocation or an edge misfit dislocation dipole at the core–shell interface is considered theoretically within both the classical and surface/interface elasticity approaches. The critical conditions for the misfit dislocation generation are studied and discussed in detail with special attention to the non-classical surface/interface effect. It is shown that this effect is significant for fine cores of radius smaller than roughly 20 interatomic distances. The positive and negative surface/interface Lamé constants mostly make the generation of the misfit dislocation easier and harder, respectively. Moreover, the positive (negative) residual surface/interface tensions mostly make the generation of the misfit dislocation harder (easier). The formation of individual misfit dislocation is energetically more preferential in finer two-phase nanowires, while the formation of misfit dislocation dipole is more expectable in the coarser ones.     

Theoretical study on the dislocations in the bubble rafts

The core structure of the dislocation in a bubble raft has been evaluated by using the improved P–N equation. The dislocation profile has been obtained explicitly for the bubble radius R=0.296, 0.592, 0.650, 0.888 mm. The results show that the core width of dislocation will increase rapidly when the bubble radius decreases, especially, this trend will become more significant as the radius is more smaller. Our calculated results agree well with the experimental data, and our method can be used to predict the core structure of the dislocation in a bubble raft where bubble-radius is given arbitrarily.     

富晶格位错的多孔铋纳米花高效电还原二氧化碳制甲酸盐※

二氧化碳转化已成为现今世界研究的热点. 本工作采用原位电化学转化的策略, 将简单溶剂热法合成的层状甲酸氧铋纳米花(BiOCOOH NFs)还原为带有大量晶格位错的多孔铋纳米花(p-Bi NFs). 研究结果表明, p-Bi NFs电催化二氧化碳转化为甲酸盐具有较小的过电位(436 mV). 在–1.8 V(相对饱和甘汞电极, vs. SCE)时, 甲酸盐的分电流密度(j_formate)高达24.4 mA•cm^-2, 法拉第效率(FE_formate)为96.7%, 且在超过500 mV的宽电位窗口内FE_formate超过90%, 并具有很好的稳定性. 该催化剂的高催化性能可归因于前驱体晶格坍塌和重构而形成特殊的多孔粗糙的微纳多级结构, 其表面富含晶格位错和缺陷等高本征活性位, 且具有较强的电子传递能力. 本研究为设计合成高性能的电催化二氧化碳还原产甲酸催化剂提供了新的思路.     

Oat Extract Avenanthramide-C Reverses Hippocampal Long-Term Potentiation Decline in Tg2576 Mice

Memory deterioration in Alzheimer’s disease (AD) is thought to be underpinned by aberrant amyloid β (Aβ) accumulation, which contributes to synaptic plasticity impairment. Avenanthramide-C (Avn-C), a polyphenol compound found predominantly in oats, has a range of biological properties. Herein, we performed methanolic extraction of the Avns-rich fraction (Fr. 2) from germinated oats using column chromatography, and examined the effects of Avn-C on synaptic correlates of memory in a mouse model of AD. Avn-C was identified in Fr. 2 based on ¹H-NMR analysis. Electrophysiological recordings were performed to examine the effects of Avn-C on the hippocampal long-term potentiation (LTP) in a Tg2576 mouse model of AD. Avn-C from germinated oats restored impaired LTP in Tg2576 mouse hippocampal slices. Furthermore, Avn-C-facilitated LTP was associated with changes in the protein levels of phospho-glycogen synthase kinase-3β (p-GSK3β-S9) and cleaved caspase 3, which are involved in Aβ-induced synaptic impairment. Our findings suggest that the Avn-C extract from germinated oats may be beneficial for AD-related synaptic plasticity impairment and memory decline.