Interaction of a screw dislocation with a notch in a piezoelectric bi-material

Summary The electro-elastic interaction of a screw dislocation and a notch in a piezoelectric bi-material is analyzed. The electro-elastic fields induced by the dislocation are derived using the conformal mapping and the image-dislocation approach, where the solution for a piezoelectric bi-material without a notch is used as a base. The stress and the electric displacement intensity factors of the notch and the image force on the dislocation are given explicitly. We find that intensity factors are expressed in terms of the effective material constants, while the radial component of the image force is independent of the notch angle and the angular position of the dislocation in the polar coordinate system. Numerical results for the image force are provided for the use when one of the two media is purely elastic. They illustrate the behavior of the dislocation in the neighborhood of the notch.     

A non-singular continuum theory of dislocations

We develop a non-singular, self-consistent framework for computing the stress field and the total elastic energy of a general dislocation microstructure. The expressions are self-consistent in that the driving force defined as the negative derivative of the total energy with respect to the dislocation position, is equal to the force produced by stress, through the Peach-Koehler formula. The singularity intrinsic to the classical continuum theory is removed here by spreading the Burgers vector isotropically about every point on the dislocation line using a spreading function characterized by a single parameter a, the spreading radius. A particular form of the spreading function chosen here leads to simple analytic formulations for stress produced by straight dislocation segments, segment self and interaction energies, and forces on the segments. For any value a>0, the total energy and the stress remain finite everywhere, including on the dislocation lines themselves. Furthermore, the well-known singular expressions are recovered for a=0. The value of the spreading radius a can be selected for numerical convenience, to reduce the stiffness of the dislocation equations of motion. Alternatively, a can be chosen to match the atomistic and continuum energies of dislocation configurations.     

Analysis of dislocation nucleation from a crystal surface based on the Peierls-Nabarro dislocation model

Dislocation nucleation from a stressed crystal surface is analyzed based on the Peierls-Nabarro dislocation model. The variational boundary integral approach is used to obtain the profiles of the embryonic dislocations in various three-dimensional nucleation configurations. The stress-dependent activation energies required to activate dislocations from their stable to unstable saddle point configurations are determined. Compared to previous analyses of this type of problem based on continuum elastic dislocation theory, the present analysis eliminates the uncertain core cutoff parameter by allowing for the existence of an extended dislocation core as the embryonic dislocation evolves. Moreover, atomic information can be incorporated to reveal the dependence of the nucleation process on the profile of the atomic interlayer potential as compared to continuum elastic dislocation theory in which only elastic constants and Burgers vector are relevant. Finally, the presented methodology can also be readily used to study dislocation nucleation from the surface heterogeneities such as cracks, steps, and quantum structures of electronic devices.     

Surface versus bulk nucleation of dislocations during contact

The indentation of single crystals by a periodic array of flat rigid contacts is analyzed using discrete dislocation plasticity. Plane strain analyses are carried out with the dislocations all of edge character and modeled as line singularities in a linear elastic solid. The limiting cases of frictionless and perfectly sticking contacts are considered. The effects of contact size, dislocation source density, and dislocation obstacle density and strength on the evolution of the mean indentation pressure are explored, but the main focus is on contrasting the response of crystals having dislocation sources on the surface with that of crystals having dislocation sources in the bulk. When there are only bulk sources, the mean contact pressure for sufficiently large contacts is independent of the friction condition, whereas for sufficiently small contact sizes, there is a significant dependence on the friction condition. When there are only surface dislocation sources the mean contact pressure increases much more rapidly with indentation depth than when bulk sources are present and the mean contact pressure is very sensitive to the strength of the obstacles to dislocation glide. Also, on unloading a layer of tensile residual stress develops when surface dislocation sources dominate.     

Interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric material

The interaction of a screw dislocation with an interfacial edge crack in a two-phase piezoelectric medium is investigated. Closed-form solutions of the elastic and electrical fields induced by the screw dislocation are derived using the conformal mapping method in conjunction with the image principle. Based on the electroelastic fields derived, the stress and electric displacement intensity factors, the image force acting on the dislocation are given explicitly. We find that the stress and electric displacement intensity factors depend on the effective electroelastic material constants. In the case where one of two phases is purely elastic, the stress intensity factor and image force are plotted to illustrate the influences of electromechanical coupling effect, the position of the dislocation and the material properties on the interaction mechanism. The project supported by the Doctoral Foundation of Hebei Province (B2003113)     

高温应变下的晶界湮没机理的晶体相场法研究

应用晶体相场方法研究高温应变下的预熔化晶界位错湮没机理. 结果表明, 原预熔化晶界上的位错在应变作用下发生分离运动, 形成新晶界, 即亚晶界. 该过程的实质是生成了亚晶粒; 亚晶界的迁移过程的本质是亚晶粒长大、吞噬旧晶粒的过程; 亚晶界之间的湮没是亚晶粒完全吞噬旧晶粒过程的结束, 体系转变成为单个晶粒结构. 根据原子密度序参数沿x和y方向的投影值随应变量的变化特征, 可以揭示出高温应变作用下, 预熔化亚晶界相遇湮没的本质是两对极性相反的偶极子位错对发生二次湮没, 该湮没的微观过程是通过位错连续二次滑移湮没而实现的, 其湮没的速率较低温时的湮没速率要小许多.     

Anti-plane elastodynamic analysis of orthotropic planes weakened by several cracks

Stress analysis is carried out in an orthotropic plane containing a Volterra-type dislocation, the distributed dislocation technique is employed to obtain integral equations for an orthotropic plane weakened by cracks under time-harmonic anti-plane traction. The integral equations are of Cauchy singular type at the location of dislocation which are solved numerically. Several examples are solved and the stress intensity factors for multiple cracks with different configuration are obtained.     

Mixed mode axisymmetric annular cracks in a finite layer: Off angle crack initiation

The solutions of axisymmetric Volterra type climb and glide edge dislocations are obtained in a layer by means of the Hankel transforms. Utilizing the same procedure, Green’s function solution is obtained for a layer under self-equilibration normal ring traction. The distributed dislocation technique is used to construct integral equations for a system of co-axial annular cracks where the layer is under axisymmetric normal loads. These equations are solved numerically to obtain dislocation density on the cracks surfaces. The results are employed to determine stress intensity factors for annular and penny-shaped cracks and the interaction between two co-axial penny-shaped cracks is studied. Moreover, the stress intensity factors of the interacting cracks are determined such that they can be further used in conjunction with strain energy density (SED) failure criterion to obtain the possible direction of crack initiation that may not be apparent under mixed mode conditions.     

氦、氘对纯铁辐照缺陷的影响

在核聚变堆的辐照环境中, 核嬗变产物氢、氦对结构材料的抗辐照性能将产生很大的影响. 本实验采用离子注入和电子辐照模拟研究了氦和氘对具有体心立方结构的纯铁的影响. 采用离子加速器在室温分别对纯铁注入氦离子和氘离子, 经500℃时效1 h后在高压电镜下进行电子辐照.结果表明: 室温注氦和室温注氘的纯铁在500℃时效后分别形成间隙型位错环和空位型位错环. 在电子辐照下, 间隙型位错环吸收间隙原子而不断长大, 而空位型位错环吸收间隙原子不断缩小. 通过计算位错环的变化速率发现, 空位型位错环比间隙型位错环吸收了更多的间隙原子, 即室温注氘纯铁的位错偏压比室温注氦纯铁的偏压参量大, 这意味着相同实验条件下空位型位错环对辐照肿胀的贡献大于间隙型位错环对辐照肿胀的贡献. 利用氦-空位复合体和氘-空位复合体的结构, 分析了注氦和注氘后在纯铁中形成不同类型位错环的原因. 关键词： 氦 氘 辐照损伤 位错环     

纳米Ni在77 K温度下压缩行为的研究

利用低温力学测试系统研究了电化学沉积纳米Ni在77 K温度下的压缩行为. 室温下纳米Ni 的屈服强度为 2.0 GPa, 77 K温度下的屈服强度为3.0 GPa, 压缩变形量则由室温的10%左右下降到5%. 借助应变速率敏感指数、激活体积、扫描电子显微和高分辨透射电子显微分析, 对纳米Ni的塑性变形机制进行了表征. 研究表明, 在77 K温度下的塑性变形主要是由晶界-位错协调变形主导, 晶界本征位错弓出后无阻碍地在晶粒内无位错区运动, 直至在相对晶界发生类似切割林位错行为. 同时分析了弓出位错的残留位错部分在协调塑性变形时起到的增加应变相容性和减小应力集中的作用. 利用晶界-位错协调机制和残留位错运动与温度及缺陷的相关性揭示了纳米Ni室温和77 K温度压缩性能差异的内在原因. 关键词： 塑性变形 强度 位错