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81.
A new microtensile tester for the study of MEMS materials with the aid of atomic force microscopy 总被引:4,自引:0,他引:4
An apparatus has been designed and implemented to measure the elastic tensile properties (Young's modulus and tensile strength)
of surface micromachined polysilicon specimens. The tensile specimens are “dog-bone” shaped ending in a large “paddle” for
convenient electrostatic or, in the improved apparatus, ultraviolet (UV) light curable adhesive gripping deposited with electrostatically
controlled manipulation. The typical test section of the specimens is 400 μm long with 2 μm×50 μm cross section. The new device
supports a nanomechanics method developed in our laboratory to acquire surface topologies of deforming specimens by means
of Atomic Force Microscopy (AFM) to determine (fields of) strains via Digital Image Correlation (DIC). With this tool, high
strength or non-linearly behaving materials can be tested under different environmental conditions by measuring the strains
directly on the surface of the film with nanometer resolution. 相似文献
82.
M. Esmaeelpour 《Applied Surface Science》2006,252(18):6353-6359
This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 1017, 3 × 1017, 6 × 1017 and 10 × 1017 N+ cm−2 with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10−2 Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr2N phase near the surface as a result of higher N+ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr2N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr2N phase and nitrogen atoms diffusion history during the thermal treatment process. 相似文献
83.
Mingshu Chen 《Surface science》2006,600(19):L255
In this letter, atomically resolved scanning tunneling microscopic (STM) images obtained from monolayer SiO2/Mo(1 1 2) are presented. The results are consistent with a previously proposed structural model of isolated [SiO4] units based on vibrational features observed by high-resolution electron energy loss spectroscopy (HREELS) and infrared reflection-absorption spectroscopy (IRAS), and oxygen species identified by ultra-violet photoemission spectroscopy (UPS). These results are inconsistent with a structural model that assumes a two-dimensional (2-D) [Si-O-Si] network. These data illustrate that a metal substrate, although coated with an oxide thin layer, can be directly imaged at the atomic-scale with STM. 相似文献
84.
The effect of ITO films thickness on the properties of flexible organic light emitting diode 总被引:1,自引:0,他引:1
Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study. 相似文献
85.
Adsorption structures of the pentacene (C22H14) molecule on the clean Si(0 0 1)-2 × 1 surface were investigated by scanning tunneling microscopy (STM) in conjunction with density functional theory calculations and STM image simulations. The pentacene molecules were found to adsorb on four major sites and four minor sites. The adsorption structures of the pentacene molecules at the four major sites were determined by comparison between the experimental and the simulated STM images. Three out of the four theoretically identified adsorption structures are different from the previously proposed adsorption structures. They involve six to eight Si-C covalent chemical bonds. The adsorption energies of the major four structures are calculated to be in the range 67-128 kcal/mol. It was also found that the pentacene molecule hardly hopped on the surface when applying pulse bias voltages on the molecule, but was mostly decomposed. 相似文献
86.
87.
The engineering of many modern electronic devices demands control over a crystal down to the thickness of a single layer of atoms—and future demands will be even more challenging. Such control is achieved by the method of crystal growth known as epitaxy, and that makes this method the subject of intense study. More than that, recent advances are revolutionizing our knowledge of how surfaces grow. In fact, growing surfaces show a beautifully rich variety of phenomena, many of which are only now beginning to be uncovered. In the past few years many surface imaging techniques have been used to give us a close look at how crystals grow—while they are growing. The purpose of this article will be to illustrate some of the ways real surfaces grow and change as revealed by some of the latest in situ microscopic imaging technologies.
It is often said that crystal growth is more of an art than a science. Here we will show that it is emphatically both. 相似文献
88.
分析了数字剪切散斑干涉条纹图的形成理论,并获得了条纹亮度与摄象机数值孔径等参数的精确关系式,从理论分析和实验验证均得出在采用小的摄象机数值孔径和3mW He-Ne激光器的情况下,仍可获得比较满意的数字剪切散斑干涉条纹图,理论工作及其结论对于进行数字剪切散斑干涉实验的最佳参数选择具有指导作用。 相似文献
89.
本文研究DSP中的IIR数字滤波器的原理和用MATLAB在TMS320C5410EVM中设计IIR数字滤波器的过程和设计方法以及程序的调试方法。 相似文献
90.
The growth of Ge and SiGe alloy films on Si substrates has attracted considerable interest in the last years because of their importance for optoelectronic devices as well as Si-based high speed transistors. Here we give a short overview on our recent real time stress measurements of Ge and SiGe alloy films on Si(0 0 1) performed with a sensitive cantilever beam technique and accompanied by structural investigations with atomic force microscopy. Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain. For the Stranski–Krastanow system Ge/Si(0 0 1) as well as for SiGe films with Si contents below 20%, the strain relaxation proceeds mainly into two steps: (i) by the formation of 3D islands on top of the Ge wetting layer; (ii) via misfit dislocations in larger 3D islands and upon their percolation. 相似文献