延迟微分方程单支方法的非线性稳定性

本文讨论延迟微分方程单支方法的非线性稳定性 .对于 Kα,β,γ类非线性延迟微分方程 ,我们证明带有线性插值的 G( c,p,q) -代数稳定的单支方法当 c≤ 1时是 GR( p/2 ,q/2 ) -稳定及弱 GAR( p/2 ,q/2 ) -稳定的 ,当 c<1时是 GAR( p/2 ,q/2 ) -稳定的 .最后的数值试验表明了上述结论的正确性 .     

The Calogero–Bogoyavlenskii–Schiff Equation in 2+1 Dimensions

We use the classical and nonclassical methods to obtain symmetry reductions and exact solutions of the (2+1)-dimensional integrable Calogero–Bogoyavlenskii–Schiff equation. Although this (2+1)-dimensional equation arises in a nonlocal form, it can be written as a system of differential equations and, in potential form, as a fourth-order partial differential equation. The classical and nonclassical methods yield some exact solutions of the (2+1)-dimensional equation that involve several arbitrary functions and hence exhibit a rich variety of qualitative behavior.     

Failure of the Quasiparticle Picture of X-ray Absorption?

The Golden rule expression for x-ray absorption spectra (XAS) is typically calculated within a one-particle (quasiparticle) approximation and generally leads to good agreement between theory and experiment. The fact that a quasiparticle approximation works fairly well is surprising, since it neglects satellite excitations and intrinsic losses due to a suddenly created core-hole. The resolution of this paradox requires physics beyond the independent particle approximation. This is discussed here using an effective Green's function formulation based on a quasi-boson model that takes interference between inelastic losses into account. This approach shows that inelastic excitations such as multi-electron excitations tend to be suppressed, and that the XAS is given by a broadened quasiparticle particle approximation, together with weak satellite structure and edge singularity effects.     

The uniqueness of solutions of perturbed backward stochastic differential equations

We prove a result on the preservation of the pathwise uniqueness property for the adapted solution to backward stochastic differential equation under perturbations.     

Qualitative Theory and Identification of Dynamic System with One Degree of Freedom

Dynamic systems described by nonlinear differential equations of the second order are studied. It is assumed that certain preliminary information on the dissipative or elastic characteristics of systems is known. A new approach is demonstrated to obtaining full information on unknown or partially known characteristics of a system from measurements of not only displacements but also velocities and accelerations __________ Published in Prikladnaya Mekhanika, Vol. 41, No. 6, pp. 139–143, June 2005.     

基于分层光学扫描的三维数字化测量技术

采用切削分层光扫描测量与计算机数据信息合成相结合的方法，有效地解决了具有复杂内外腔结构零件的三维数字化测量。该方法比传统三维测量速度快、自动化程度高，能同时准确测量零件内外腔表面，零件边缘测量误差可控制在CCD两个像素内。利用获取的铝合金精密小箱体三维数据，在计算机上重构了零件的三维模型，并用RP技术制造出了零件物理原形。     

光纤陀螺信号处理中SLD驱动电路设计

光纤陀螺用光源要求输出功率高、相干性低、稳定性好，超辐射发光二极管（SLD）是能满足这些要求的理想光源，目前国内光纤陀螺用的光源基本上主要选择超辐射发光二极管（SLD），从工程实际应用出发，介绍了超辐射发光二极管（SLD）驱动电路设计，以此来提高光纤陀螺性能。     

Structure and optical properties of lead iodide based two-dimensional perovskite compounds containing fluorophenethylamines

Phenethylammonium-based perovskites, which can be regarded as a semiconductor/insulator multiple quantum well consisting of lead halide semiconductor layers sandwiched between phenethylammonium insulator layers were prepared. To investigate the effects of the electronic state and the orientation of organic insulator layers on the optical properties of layered perovskites, fluorine substituted analogues were also prepared. The structure and optical properties were investigated by the XRD, UV–Vis absorption, and fluorescence measurements. The exciton absorption peak was shifted by the substitution of fluorine atoms in organic ammonium compounds. It became clear that the optical properties of two-dimensional perovskite compounds were controlled by the substitution of fluorine atoms.     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.