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91.
92.
级联长周期光栅光谱特性 总被引:5,自引:0,他引:5
利用传输矩阵法分析了级联长周期光栅的光谱特性,讨论了级联处光纤的长度、位置以及包层模损耗系数对级联长周期光栅光谱的影响,并对级联长周期光栅和相移长周期光栅的光谱进行了比较。结果表明两者光谱存级联光纤长度较小或级联位置靠近光栅两端时具有较强的一致性,而在级联处光纤较长并且级联位置在中间时,两者表现出截然不同的光谱特性;在不考虑其他损耗的情况下,如果只改变级联处光纤长度,级联长周期光栅总量守恒;此外,当级联长周期光栅在级联处光纤包层模损耗系数较大时,级联长周期光栅的光谱等效于两个长周期光栅光谱的非相干叠加,从而为长周期光栅增益均衡器的优化设计和制作提供了一个简便有效的方法。 相似文献
93.
Wolfgang S.M. Werner 《Surface science》2003,526(3):L159
Reflection electron energy loss spectra have been measured for a semiconductor and some metals (Si, Cu, Ag and Au). A novel procedure is presented to rigorously decompose the spectra into contributions corresponding to surface and volume excitations. The resulting distributions of energy losses in an individual surface loss are in good agreement with theory. In particular, the begrenzungs effect occurring at the boundary of a solid state plasma, i.e. the reduction of the intensity of bulk modes due to the coupling with surface modes, can be clearly observed in the retrieved energy loss distribution. 相似文献
94.
To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications,a simple chemical cleaning and surface passivation scheme is introduced,and Ge p-MOSFETs with effective channel hole mobility up to665 cm2/V·s are demonstrated on a Ge(111) substrate.Moreover,a physical model is proposed to explain the dipole layer formation at the metal–oxide–semiconductor(MOS) interface by analyzing the electrical characteristics of HCl- and(NH4)2S-passivated samples. 相似文献
95.
Dielectric relaxation and charge transport induced by electron hopping in ZnO single crystal are measured by using a novocontrol broadband dielectric spectrometer. Typical Debye-like dielectric relaxation originating from electronic hopping between electronic traps and conductive band in surface Schottky barrier region is observed for ZnO single crystal-Au electrode system. However, after insulation of ZnO single crystal by heat treatment in rich oxygen atmosphere, dielectric relaxation and alternating current conductance are observed simultaneously in the dielectric spectra, implying that dielectric relaxation and charge transport can be induced simultaneously by electronic hopping at high temperature in an ordered system. The intrinsic correlation between local dielectric relaxation and long range charge transport offers us a new method to explore complicated dielectrics. 相似文献
96.
Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO_2 dielectric 下载免费PDF全文
Gd-doped HfO2 has drawn worldwide interest for its interesting features.It is considered to be a suitable material for N-type metal-oxide-semiconductor(MOS)devices due to a negative flatband voltage(Vfb)shift caused by the Gd doping.In this work,an anomalous positive shift was observed when Gd was doped into HfO2.The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors,such as Fermi level pinning(FLP),a dipole at the dielectric/SiO2interface,fixed interfacial charge,and bulk charge,on Vfb.It was found that the FLP and interfacial dipole could make Vfbnegatively shifted,which is in agreement with the conventional dipole theory.The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfbshift. 相似文献
97.
Control of gain and thermal carrier loss profiles for mode optimization in 980-nm broad-area vertical-cavity surface-emitting lasers 下载免费PDF全文
Optical gain and thermal carrier loss distributions regarding current diffusion and various electric contact areas are investigated to improve the near-field modes from the ring-shape to a Gaussian-like configuration for extra-broad-area and oxide-confined vertical-cavity surface-emitting lasers. In this work an equivalent circuit network model is used. The resistance of the continuously-graded distributed Bragg reflectors (DBRs), the current diffusion and the temperature effect due to different electric-contact areas are calculated and analyzed at first, as these parameters affect one another and are the key factors in determining the gain and thermal carrier loss. Finally, the gain and thermal carrier loss distributions are calculated and discussed. 相似文献
98.
网络视频质量评估具有无参考性、实时性、网络传输状态依赖性和主观视觉性等需求.本文以网络丢包引发的视频失真为研究重点,针对不同解码类型帧上的网络丢包引发的视频失真持续效应不同和网络丢包引发的人眼视觉感受与丢包所在帧视频内容的运动剧烈程度有着显著的关联等现象,提出了一种基于运动剧烈程度的无参考视频质量评价模型.该模型无需原始参考视频序列亦无需视频解码,对客户端接收到的码流分析其由丢包引起的视频损伤,标记受损宏块,建立受损宏块的失真持续效应和运动剧烈程度与视频质量间的关联,并完成视频质量评估.实验结果表明,该方法计算量小,实时性高,与主观评价结果一致性程度较高. 相似文献
99.
Free space optics (FSO) has attracted a lot of attention for a variety of applications in telecommunications area, and it is dream of every researcher and telecommunication society to make it a real alternative solution for the last mile problem, to replace fiber optics. FSO is much preferred because of its low maintenance cost and deployment time. FSO with single-beam system is vulnerable to atmospheric attenuation, so to overcome this, a multiple-beam FSO transceiver system has become prominent and is usually used. In this paper, average rain attenuation is evaluated from the collected rain intensity data which are collected for a period of seven months, and implemented in the study concerning results relating link distance, and received optical power of using multiple-beam FSO system in tropical rainy weather. Comparison is made in terms of received optical power, geometrical losses, atmospheric losses, and bit error rate (BER) on using different number of optical beams, based on simulation at data rate of 1 Gb/s. From the results it is clear that the quality of received power is improved by using up to four beams, along with link distance up to 1141.2 m as compared to one-beam, two-beam, and three-beam, with link distances 833.3 m, 991.0 m, 1075.4 m, respectively. 相似文献
100.
This paper analyzes the properties of reflected polarization dependent loss of apodized fiber Bragg gratings with temperature effective. We simulates reflected spectrum and polarization dependent loss of the apodized fiber Bragg gratings. The reflected spectrum and polarization dependent loss are measured under different temperatures. The analysis results show that reflected polarization dependent loss presents two peaks which shift an equal proportion to long wavelength with temperature increasing and have very good stability so we propose an idea that use polarization dependent loss as temperature sensor measurement parameters. The results show that the accuracy of measurement can be increased almost by one order of magnitude. 相似文献