A numerical study of rotation effects on jets effusing from inclined holes into a cross-flow

In this work, the complexity of the flow field arising from the impact of the interaction of coolant jets with a hot cross-flow under rotation conditions was numerically simulated using large eddy simulation with artificial inflow boundary condition. The finite-volume method and the unsteady PISO (Pressure Implicit with Splitting of Operators) algorithm were applied on a non-uniform staggered grid. The simulations were performed for four different values of rotation number (Ro) of 0.0, 0.03021, 0.06042, and 0.12084, a jet Reynolds number of 4700, based on the hole width and the jet exit velocity. The air jet was injected at 30° and 90° in the streamwise direction with a density ratio of 1.04 and a velocity ratio of 0.5. The flow fields of the present study were compared with experimental data in order to validate the reliability of the LES technique. It was shown that the rotation has a strong impact on the jet trajectory behaviour and the film cooling effectiveness. The film trajectory always inclines centrifugally. Under rotating conditions, the film trajectory departs from the centreline to the left boundary. The deflection becomes greater as Ro increases. Furthermore, it was also found that the injection angle has a strong impact on separation and reattachment behaviour as well as the strength of the penetration into the cross-flow. As it increases, the distribution of the film cooling downstream the jet exit is more non-uniform and the film cooling effectiveness level slightly decreases.     

Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

Edge misfit dislocation formation at the interface of a nanopore and infinite substrate with surface/interface effects

The model of an edge misfit dislocation at the interface of the hollow nanopore and the infinite substrate with surface/interface stress is investigated. Using the complex variable method, analytical solutions for complex potentials of a film due to an edge misfit dislocation located in the film with surface/interface effect are derived, and the stress fields of the film and the edge misfit dislocation formation energy can be obtained. The critical conditions for edge misfit dislocation formation are given at which the generation of an edge misfit dislocation is energetically favourable. The influence of the ratio of the shear modulus between the film and the infinite substrate, the misfit strain, the radius of the nanopore and the surface/interface stress on the critical thickness of the film is discussed.     

Long-range chemical interactions in solid-state reactions: effect of an inert Ag interlayer on the formation of L10-FePd in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) trilayers

The effect of 0, 0.5, and 1?μm-thick Ag interlayers on the chemical interaction between Pd and Fe in epitaxial Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1)/MgO(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1)/MgO(0?0?1) trilayers has been studied using X-ray diffraction, ⁵⁷Fe Mössbauer spectroscopy, X-ray photoelectron spectroscopy, and magnetic structural measurements. No mixing of Pd and Fe occurs via the chemically inert Ag layer at annealing temperatures up to 400?°C. As the annealing temperature is increased above 400?°C, a solid-state synthesis of an ordered L1₀-FePd phase begins in the Pd(0?0?1)/Ag(0?0?1)/Fe(0?0?1) and Fe(0?0?1)/Ag(0?0?1)/Pd(0?0?1) film trilayers regardless of the thickness of the buffer Ag layer. In all samples, annealing above 500?°C leads to the formation of a disordered Fe_xPd_1?x(0?0?1) phase; however, in samples lacking the Ag layer, the synthesis of Fe_xPd_1?x is preceded by the formation of an ordered L1₂-FePd₃ phase. An analysis of the X-ray photoelectron spectroscopy results shows that Pd is the dominant moving species in the reaction between Pd and Fe. According to the preliminary results, the 2.2?μm-thick Ag film does not prevent the synthesis of the L1₀-FePd phase and only slightly increases the phase’s initiation temperature. Data showing the ultra-fast transport of Pd atoms via thick inert Ag layers are interpreted as direct evidence of the long-range character of the chemical interaction between Pd and Fe. Thus, in the reaction state, Pd and Fe interact chemically even though the distance between them is about 10⁴ times greater than an ordinary chemical bond length.     

铁磁/反铁磁双层薄膜自旋波共振谱

本文在一维海森堡模型的基础上,采用界面参数化方法,研究了铁磁/反铁磁双层薄膜中自旋波低温激发问题．重点讨论了表面各向异性对薄膜中自旋波共振谱的影响．结果表明：体系中的自旋波本征模存在共振行为,表面各向异性场对体模、完全禁闭模的共振谱影响较大,对界面模没有影响．     

金属表面镀高分子膜对真空击穿阈值的影响

探索提高金属表面真空击穿阈值的方法,对脉冲功率技术的发展和应用具有重要意义。在金属表面电子发射理论分析的基础上,采用有限元法计算阴极杆表面电场随二极管电压的变化规律,设计了实验系统,并开展了实验研究。实验对比了在脉宽约30 ns、阴极杆与阳极筒间隙12 mm时,钛合金TC4阴极杆在不同种类高分子膜（膜厚30～60 μm）下真空击穿阈值的变化情况。在表面粗糙度R_z（轮廓最大高度）为0.8 μm的TC4阴极杆表面分别镀环氧树脂膜和丙烯酸膜,实验结果表明,镀丙烯酸膜阴极杆的击穿阈值约505 kV/cm,相对于不镀膜阴极杆,击穿场强提高了约20.6%;在表面粗糙度R_z为0.2 μm的TC4阴极杆表面分别镀聚酰亚胺膜和聚醚醚酮膜,实验结果表明,镀聚酰亚胺膜阴极杆的击穿阈值为584 kV/cm,相对于不镀膜阴极杆,击穿场强提高了约28.1%。因此,在金属表面镀丙烯酸膜、聚酰亚胺膜可以有效提高金属表面的真空击穿阈值。     

低喷淋密度超亲水表面水平管降液膜温度分布

水平管降液膜蒸发广泛应用在石油、化工、海水淡化等领域,对低喷淋密度温度演化规律的研究有助于拓宽其应用范围,理解其微观机理。本文在超亲水表面上结合红外热追踪技术,对水平管降液膜表面的温度演化规律进行了研究,分析了温度分区现象和温升规律。实验中首次发现了马鞍形液膜内部的高温环状结构,并结合三维数值模拟揭示了掺混作用导致的局部高温环状结构形成的内部机理。     

GOSs-稀土配合物紫外增强材料的光谱分析与稳定性研究

氧化石墨烯薄片(GOSs)作为一种新型的二维片状材料,具有较高的比表面积、丰富的表面含氧官能团以及良好的光热稳定性。而稀土配合物通过无机稀土元素与有机配体的结合表现出优异的荧光特性。为了将两类材料具有的物化特性结合起来应用于紫外光谱探测领域。选取了合适的有机配体啉菲罗啉(1,10-邻二氮杂菲,phen)、2’2-联嘧啶(bpm)作为桥联分子,把氧化石墨烯(GOSs)与稀土配合物通过氢键自组装作用进行复合,制备了高效稳定可调的GOSs-稀土配合物复合荧光材料GOSs-Eu(BA)3phen和GOSs-Eu(TTA)3bpm,并且制备了相应的聚乙烯醇(PVA)共混紫外增强薄膜,对其光谱特性与稳定性进行了深入的研究。采用红外光谱、扫描电镜和金相显微镜等方法,对紫外增强材料进行了性能表征。采用吸收光谱,荧光光谱等方法,对紫外增强薄膜进行了性能表征。此外,通过热重测试(TGA)表征了GOSs氢键复合前后紫外增强材料的热稳定性,通过荧光强度-紫外光照次数表征了GOSs氢键复合前后紫外增强薄膜的光稳定性。红外光谱分析发现,进行配位前后有机配体的特征峰产生了频移,表明稀土配合物中Eu 3+与配体之间存在着明显的配位作用。在进行复合之后,桥联配体的特征峰也产生了偏移,表明GOSs与稀土配合物通过桥联分子的氢键作用进行了进行复合。吸收光谱与荧光光谱测定结果表明增强薄膜吸收峰在200~400 nm,荧光主峰在612 nm左右,为Eu 3+特征红色荧光峰,且不同配体可以实现不同范围的吸收产生差异化的荧光表现。扫描电镜和金相显微镜清晰地展示了稀土配合物复合前后的微观形貌,即颗粒状稀土配合物附着在石墨烯薄片上。光稳定性测试表明经过GOSs氢键复合之后,Eu(BA)3phen和Eu(TTA)3bpm稀土配合物荧光材料在进行25次荧光强度测试后光漂白程度分别下降了4.26%和6.41%,提高了其光稳定性。热重测试也表明在经过GOSs氢键复合之后,稀土配合物的热稳定性有了很大提高。总之,得益于GOSs和稀土配合物的特性结合,所制备的紫外增强材料表现出优异的荧光特性与稳定性,必将在紫外探测方面有着广阔的应用前景。     

Light-induced interaction between graphene and magnetic film in a cavity

An interaction mechanism between graphene and magnetic film in cavity is presented in this work. The pseudospin in graphene can indirectly interact with the spins in magnetic film by the media of a circularly polarized photons under the conditions of high temperature and intense laser field. The interaction energy as well as the average values of pseudospin and spin components are calculated according to a generating functional approach. This interaction mechanism provides a scheme of detecting the pseudospin polarization effect.     

A solvent-governed surface state strategy for rational synthesis of N and S co-doped carbon dots with multicolour fluorescence

ABSTRACT

Multicolour emissive carbon dots (CDs) are widely investigated by virtue of their merits on fluorescent properties. Method on heteroatom doping assisted with various solvents has been proved efficient in achieving multiple-colour-emissive CDs, especially long-wavelength emission. Herein, a synthesis of multicolour-emissive CDs by controlled surface function is reported. By tuning the thermal-pyrolysis temperature and molar ratio of reactants, optimal emission of the resulted CDs gradually shifts from blue to yellow light with the assistance of different solvents. According to the emissive relationship dependent on excitation, fluorescence lifetimes, and FT-IR of these CDs, the different surface states participated with S and N elements on the surface of carbogenic core govern fluorescent colours of the CDs. In terms of the applications, blue CDs (B-CDs) exhibits high sensitivity for ion detections of Ag⁺ and Fe³⁺, which is further illustrated to have different quenching mechanisms each other because that these ions have the affinity interaction with different surface groups of the CDs. Moreover, blue and yellow CDs solutions are mixed with PVP water solution to fabricate white-light CDs/PVP film, which exhibits stable fluorescence with a CIE coordinate of (0.32, 0.33) and endows these CDs as potentially fluorescent nanomaterial in the solid state lighting field.