通过锁相使一种过模复合器件运行频率稳定

 提出了一种过模复合器件。自洽地导出了由外电磁信号和预群聚电子束同时驱动的一种过模复合器件的辐射波相位锁定方程;讨论了到达锁相运行的时间、频率移动和带宽。分析表明：当由预群聚电子束和外电磁信号同时锁相时,通过调节参数,可以缩短到达锁相运行的时间,减小运行频率对要锁定的频率（外电磁信号频率）的移动和增大锁相运行的带宽。     

Effect of Discharge Plasma Potential on Diffusion Plasma Parameters Controlled by a Mesh Grid in a Double Plasma Device

The plasma region under investigation is separated from the discharge region by a mesh grid. Plasma potential and electron number densities and electron temperatures under bi‐Maxwellian approximation for electron distribution function of the multi‐dipole argon plasma are measured. The cold electrons in the diffusion region are produced by local ionization. The hot electrons are the ionizing electrons behaving as Maxwellian. The electron trapping process in the discharge region is produced by potential well due to positive plasma potential with respect to the anode and by a repulsive grid. The dependence of ratios of the density of the hot to the cold electrons N_E (=N_eh/N_ec) and hot to cold electron temperature T(=T_eh/T_ec) in the diffusion region on the depth of the potential well has been investigated. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

Theoretical analysis of the radiation effect on transient behavior of an optoelectronic integrated device composed of a heterojunction phototransistor and a light emitting diode is studied theoretically. First, the transient behavior and the rise time of this device before radiation are investigated based on the frequency response of the constituent devices and the optical feedback inside the device. Second, the effect of neutron irradiation flux on the transient behavior of this device is theoretically studied. The results show that, by increasing the optical feedback inside the device, the rise time in the amplification mode is increased along with an increasing output, while that in the switching mode can be reduced effectively, and the neutron irradiation reduces the transient response and the rise time in both the amplification and switching modes. This type of model can be exploited as optical amplifier, optical switching device, and other applications.     

冰蓄冷空调系统设备选择的数学模型及简化求解

从工程经济学角度,引进等额年金,设计日负荷修正系数,得出冰蓄冷空调系统设备选择的目标函数,对各参数进行赋值,求得最佳的系统设备选择,并用一个工程实例验证,结果表明此数学模型是有效的。所得的结论可供设计者在设汁时参考。     

基于B3PyMPM∶Cs高效叠层OLED器件的制备

以B 3 PyMPM∶Cs/Al/HAT-CN作为电荷生成单元制备高效叠层绿色磷光有机电致发光器件,叠层器件的最大电流效率和最大流明效率分别为172.2 cd/A和111.0 lm/W,在5 mA/cm^2电流密度下,叠层器件的电压和亮度分别为传统器件的2.04倍和2.84倍.为了探究叠层器件性能优于传统器件的原因,研究了电荷生成单元内的电荷产生和注入过程,以及薄层铝对电子注入特性和电荷生成单元稳定性的影响.实验结果表明,电荷能够有效地在电荷生成单元内产生并顺利注入电子传输层中,B3PyMPM∶Cs和HAT-CN间Al薄层的插入能够进一步提高电子注入效率及器件结构的稳定性.     

Dynamic optimization problems with bounded terminal conditions

Bounded terminal conditions of nonlinear optimization problems are converted to equality terminal conditions via the Valentine's device. In so doing, additional unknown parameters are introduced into the problem. The transformed problems can still be easily solved using the sequential gradient-restoration algorithm (SGRA) via a simple augmentation of the unknown parameter vector . Three example problems with bounded terminal conditions are solved to verify this technique.This research was supported in part by the National Aeronautics and Space Administration under NASA Grant No. NCC 2-106.     

氮低温制冷循环系统在大科学装置中的应用与发展

大科学装置中低温设备的氮低温冷量需要日益快速增长,为减少能耗和保障装置的长期稳定运行,基于大科学装置氮低温系统运行需求,介绍了氮低温制冷循环系统在国内外大科学装置中的应用情况,总结了目前大科学装置中应用氮低温制冷循环系统的研究现状,并探讨以氮制冷机为核心的氮低温制冷循环系统在未来大科学装置中发展方向。     

基于器件结构提高TADF-OLED器件的发光性能

为了提高以TADF材料作为主体、天蓝色荧光材料作为客体的混合薄膜的OLED器件光电性能,我们调整了器件结构,使主体材料发挥其优势。制备了基本结构为ITO/NPB(40 nm)/DMAC-DPS∶x%BUBD-1(40 nm)/Bphen(30 nm)/LiF(0.5 nm)/Al的OLED器件。研究了主-客体材料在不同掺杂浓度下的OLED器件的光电特性。为了提高主体材料的利用率,在空穴传输层和发光层之间加入10 nm的DMAC-DPS作为间隔层;然后,在阳极和空穴传输层之间加入HAT-CN作为空穴注入层,形成HAT-CN/NPB结构的PN结,有效降低了器件的启亮电压(2.7 V)。测量了有无HAT-CN的单空穴器件的阻抗谱。结果表明,在最佳掺杂比例(2%)下,器件的外量子效率(EQE)达到4.92%,接近荧光OLED的EQE理论极限值;加入10 nm的DMAC-DPS作为间隔层,使得器件的EQE达到5.37%;HAT-CN/NPB结构的PN结有效地降低了器件的启亮电压(2.7 V),将OLED器件的EQE提高到5.76%;HAT-CN的加入提高了器件的空穴迁移率,降低了单空穴器件的阻抗...     

HL-1装置石墨孔栏杂质收集探针的俄歇电子能谱及孔栏表面分析

在HL-1装置的输样机构上安放了硅收集探针。经过55次高功率托卡马克放电辐照后,对于因石墨孔栏被腐蚀而溅射蒸发,并沉积在硅收集探针上的杂质涂层进行了俄歇电子能谱(AES)分析,获得无主动冷却石墨孔栏被腐蚀而溅射蒸发出来的碳杂质流通量约为8×10~(13)cm~(-2)·S~(-1),金属重杂质镍和铬较GH39高镍钢孔栏时降低44％左右。     

嵌入式三色光变器

为了提升现有导模共振防伪光变器件的性能,设计了一种基于ZnS覆盖膜的一维单周期矩形结构三色光变器.当自然光入射角为45°时,可在0°,58°,90°方位角分别获得相应的蓝、绿、红三色反射峰,对研究结果进行了物理解释.分析并提出了该器件周期、槽深、膜厚以及入射角变化对反射峰的影响规律,对器件的设计、制作和测试有重要指导作用.三色光变器基于简单结构实现方位角调节的自然光三色光变效果,可运用传统激光全息产业的模压和蒸镀工艺进行制作,在光变图像防伪领域有重要应用.