Synthesis of {100} Facet Dominant Anatase TiO2 Nanobelts and the Origin of Facet‐Dependent Photoreactivity

Sword‐like anatase TiO₂ nanobelts exposed with 78 % clean {100} facets were synthesized and the facet‐dependent photoreactivity of anatase TiO₂ was investigated. By quantitative comparison with the reference {001} facets, the {100} facets possessed about ten‐times higher active sites density than that on {001} facets, resulting in higher photoreaction efficiency. After the active sites density normalization, the {100} and {001} facets exhibited distinct wavelength‐dependent photocatalytic performance, attributed to the anisotropic electronic structures in TiO₂ crystals.     

磷酸三丁酯/正辛醇络合萃取对氯苯酚

以对氯苯酚稀溶液为研究对象,以正辛醇为稀释剂,研究了萃取剂种类及其浓度、水相平衡pH、对氯苯酚初始浓度等因素对萃取分配比的影响,并用NaOH对其负载溶质的有机相进行反萃.结果表明,络合萃取对处理高浓度对氯苯酚废水具有优势;磷酸三丁酯(TBP)的浓度和体系的pH是影响络合萃取的关键因素;采用NaOH对有机相进行反萃,当NaOH浓度为0.5mol/L时反萃率达到98.55%.红外光谱分析表明,TBP萃取对氯苯酚基于氢键作用机理.     

Structural and electrical properties of SrTiO3 thin films as insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures

SrTiO₃ (STO) thin films were deposited on p-Si(100) substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency (RF) magnetron sputtering technique. Their structure and electrical properties were investigated. It was found that the transition from amorphous phase to polycrystalline phase occurred at the substrate temperatures 300--400℃. Their crystallinity became better when the substrate temperatures further increased. The dielectric and leakage current measurements were carried out by using the Si/STO/Pt metal--insulator--semiconductor (MIS) structures at room temperature. It was found that the fixed charge density decreased and both the interface trap density and the dielectric constant increased when the substrate temperatures were increased. The leakage current mechanisms for STO MIS structures with STO films prepared at 700℃ followed the space charge limited current (SCLC) under the low applied electric field and the Poole--Frenkel emission under the high one. In addition, the resistivity for films prepared at 700℃ was higher than 10¹¹\Omega \cdot cm under the voltage lower than 10V (corresponding to the electric field of 1.54\times 10³kV\cdotcm^-1). It suggested that the STO films prepared at 700℃ were suitable for acting as the insulator of metal--ferroelectric--insulator--semiconductor (MFIS) structures.     

Deposition of MgO films by pulsed mid-frequency magnetron sputtering

MgO films were deposited by pulsed mid-frequency magnetron sputtering from metallic targets in the mixture of Ar and O₂ gas. The surface morphology, crystalline structure, and optical properties were characterized by using atomic force microscopy (AFM), X-ray diffraction (XRD), and spectroscopic ellipsometry, respectively. The secondary electron emission coefficients of MgO films were measured by using a self-made apparatus in He gas. A pronounced hysteresis phenomenon of target voltage, current, and deposition rate with increasing and decreasing O₂ flow rate was observed. The structure of films deposited at a metallic mode changes from Mg phase to the mixed Mg and MgO phase, and the films have a very rough surface. All the films deposited at oxide mode have high transparency and smooth surface, and show (2 2 0) preferred orientation growth. The refractive index and extinction coefficient at a wavelength of 670 nm for MgO films deposited at oxide mode with a O₂ flow rate of 3 sccm are 1.698 and 1.16×10⁻⁴, respectively. The secondary emission coefficient at a E/p of 57.8 V/(cm Torr) for MgO films deposited at a O₂ flow rate of 3 sccm is 0.16, which is higher than that of MgO films deposited by e-beam evaporation.     

铁磁超导态/绝缘层/自旋三重态p波超导体结的直流Josephson电流

由Bogoliubov-de Gennes方程得到铁磁超导共存态(FS)的自洽方程，利用推广的Furusaki-Tsukada的电流公式计算了铁磁超导态/绝缘层/自旋三重态p波超导体(FS/I/p)结的直流Josephson电流随结的温度、相位差以及FS中磁交换能、结界面的势垒散射强度的变化关系.研究表明：FS中磁交换能、结界面的势垒散射均抑制FS/I/p结的直流Josephson电流.当自旋三重态超导体具有p_x波配对势时，自旋三重态超导体结的直流Josephson电流随结两侧相位差的振荡周期是π. 关键词： 铁磁超导态 自旋三重态超导体 p波超导体 直流Josephson电流     

Spectroscopic system for controlling gas flow and impurity content during magnetron deposition of films

An automated system for controlling oxygen flow in vacuum-plasma magnetron deposition of oxides with simultaneous monitoring of gas impurities in a vacuum chamber is proposed. Features of using compact spectrometers in such a system are considered. The precision of controlling the flow of metal and oxygen particles during deposition of Ti and Al oxides is determined. The sensitivity to impurity content is estimated. The effect of sputtered metal and type of coating (metal or oxide) on the sensitivity to impurities of air, water vapor, and oil in the vacuum chamber is found. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 412–416, May–June, 2007.     

磁控溅射和它的应用

近年来,磁控溅射已成为重要的薄膜沉积技术之一。我国于1982年研制成功第一台磁控溅射镀膜机,比国外只晚几年。随后生产出各种中、小型磁控溅射镀膜机,主要用于制镜和美术陶瓷工艺品装饰性镀膜。 目前,国外发达国家已由装饰性镀膜过渡到功能膜,诸如电磁、光学、机械、防潮和     

Ar离子溅射生成碳纳米管

用扫描电子显微镜(SEM)和透射电子显微镜(TE),研究了离子溅射石墨表面的形貌特征和结构,证实了碳纳米管可通过溅射原子在表面形貌突起部位沉积生长.     

Reactive surfactants in heterophase polymerization for high performance polymers

 A variety of nonionic reactive surfactants have been prepared from block copolymer precursors. These precursors are formed from a commercially available polyoxyethylene glycol monomethylether as the hydrophilic sequence of the surfactant; this product is used as initiator of ring opening anionic polymerization of butylene oxide. Finally the reactive surfactants are obtained after proper functionalization of the precursor. The reactive surfactants are an inisurf with an asymmetric azo compound, a transurf with a thiol group, and a few surfmers with acrylic, methacrylic, styrenic and α-methyl styrenic reactive groups. These compounds have been engaged in styrene emulsion or dispersion polymerization. Several of them have been found to be useful for preparing stable latices. Received: 22 July 1997 Accepted: 11 December 1997     

Metalization of polypropylene. I. Synthesis and melt free‐radical grafting of novel maleimides and methacrylates containing chelating moieties

Several chelating monomers with methacrylate and maleimide residues as polymerizable groups and diketone and aspartic acid residues as metal‐bonding groups were synthesized. A long‐chain aliphatic spacer was introduced to increase the solubility of the monomers in the polymer melt and to enhance the compatibility of grafted side chains and homopolymers with polypropylene (PP). PP was functionalized by melt free‐radical grafting, and some properties of the modified polymer were investigated. The grafting of a chelating methacrylic ester by injection molding afforded grafting yields of 30–50%. A comparison with products obtained by the grafting of commercially available acetoacetoxy methyl methacrylate showed the beneficial effect of the aliphatic spacer with respect to the grafting yield as well as the tensile strength and flexural modulus. The grafting of an aspartic acid based maleimide in an extruder afforded grafting yields of 80–95% and a significant increase in the surface wettability, as shown by contact‐angle measurements. A comparative study using samples obtained by the grafting of maleimidobenzoic acid indicated that the homogeneity‐increasing effect of the spacer was neutralized by the detrimental effect of the dicarboxylic chelating group. Nevertheless, the results showed that the maleimides were well suited for grafting by reactive extrusion because of their low susceptibility to homopolymerization under melt‐processing conditions. Preliminary metalization experiments showed the feasibility of plating without the use of corrosive etchants. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 41: 3400–3413, 2003