Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

A VO₂ thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO₂ (FTO) conductive glass substrate. The FTO/VO₂/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO₂/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO₂/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.     

Decay rate with coordinate-dependent diffusion coefficients

Using a master equation for the reduced density matrix of open quantum system, the influence of coordinate-dependent microscopical diffusion coefficients on the decay rate from a potential well is studied. For different temperatures, frictions, heights of barrier and ratios of stiffnesses of the potential in the minimum and on the top of the barrier, the quasistationary decay rates are obtained with the sets of coordinate-dependent and -independent microscopical diffusion coefficients, and coordinate-dependent phenomenological diffusion coefficients.     

Low volatile monofunctional reactive diluents for radiation curable formulations

In the last decades the importance of UV curable formulations has increased continuously. Their fast curing speed, solvent-free polymerization conditions, and the formation of hard and highly crosslinked photopolymer networks represent major benefits. Commercial UV resins generally consist of multi-functional vinyl oligomers, photoinitiators, additives, and reactive diluents. Mono- and multi-functional reactive diluents serve as thinners to lower the overall resin viscosity and to improve processability. However, many monofunctional reactive diluents like isobornyl (meth)acrylate or benzyl (meth)acrylate exhibit high volatility, often already at room temperature. This causes adverse effects such as unpleasant odor, potential health risks, and changing resin composition during processing. A new group of monomers that show high potential for replacing traditional highly volatile reactive diluents are salicylate (meth)acrylates. In this work, salicylate-based thinners are synthesized, polymerized, and characterized with respect to their viscosity, volatility, thermal stability, photoreactivity, and thermomechanical properties of their homopolymers. Additionally, a first example of their diluting effect in a highly viscous difunctional polyester urethane methacrylate is demonstrated with 30 wt% of a cycloaliphatically and an aromatically substituted salicylate methacrylate. The polymers of the diluted resin exhibit similarly high glass transition temperatures of 110 and 126 °C, which are in the range of the polymers of the undiluted resin.     

Incorporation of β-Alanine in Cu(II) ATCUN Peptide Complexes Increases ROS Levels,DNA Cleavage and Antiproliferative Activity**

Redox-active Cu(II) complexes are able to form reactive oxygen species (ROS) in the presence of oxygen and reducing agents. Recently, Faller et al. reported that ROS generation by Cu(II) ATCUN complexes is not as high as assumed for decades. High complex stability results in silencing of the Cu(II)/Cu(I) redox cycle and therefore leads to low ROS generation. In this work, we demonstrate that an exchange of the α-amino acid Gly with the β-amino acid β-Ala at position 2 (Gly2→β-Ala2) of the ATCUN motif reinstates ROS production (^•OH and H₂O₂). Potentiometry, cyclic voltammetry, EPR spectroscopy and DFT simulations were utilized to explain the increased ROS generation of these β-Ala2-containing ATCUN complexes. We also observed enhanced oxidative cleavage activity towards plasmid DNA for β-Ala2 compared to the Gly2 complexes. Modifications with positively charged Lys residues increased the DNA affinity through electrostatic interactions as determined by UV/VIS, fluorescence, and CD spectroscopy, and consequently led to a further increase in nuclease activity. A similar trend was observed regarding the cytotoxic activity of the complexes against several human cancer cell lines where β-Ala2 peptide complexes had lower IC₅₀ values compared to Gly2. The higher cytotoxicity could be attributed to an increased cellular uptake as determined by ICP-MS measurements.     

Thickness effect on the band gap of magnetron sputtered Pb45Se45O10 thin films on Si

Oxygen doped PbSe thin films with different thickness were grown on the Si (100) substrates by magnetron sputtering, and characterized using scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and physical properties measurement system. As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76% was obtained. According to the density functional theory calculations and the experimental results, the band gap of the PbSe thin films decreased from 0.278 eV to 0.21 eV when doped with oxygen. Doping with oxygen during the deposition process is a viable way to prepare PbSe thin films with a tunable band gap. The band gap increased almost linearly with the lattice constant, confirmed by the calculated and experimental results.     

Surface characteristics and electrochemical behaviour of sputter-deposited NiTi thin film

Thin nanocrystalline amorphous NiTi film was deposited on Si substrate using DC magnetron sputtering. The as-deposited NiTi thin film was crystallized by heat treatment at 500 °C for 1 h. The crystal structure, surface morphology, microstructure and surface chemistry of the deposited films were studied using X-ray diffraction, atomic force microscopy, scanning electron microscopy and X-ray photoelectron spectroscopy (XPS), respectively. Corrosion behaviour was assessed in Ringer’s solution at 37 °C by open circuit potential (OCP), potentiodynamic polarization and electrochemical impedance spectroscopy as a function of exposure time. OCP values indicate that the tendency for the formation of a spontaneous oxide film is greater for the NiTi thin films than the bulk NiTi. Long time exposure to Ringer’s solution was found to have a great effect on the corrosion behaviour of the samples. Significantly low corrosion current density was obtained for the annealed NiTi film from the potentiodynamic polarization curves indicating a typical passive behaviour, but as-deposited film and bulk NiTi alloy exhibited breakdown of passivity at potentials approximately +1.4 V (vs. SCE). XPS showed that the oxide film formed on the annealed NiTi thin film mainly composed of Ti oxides, and no evidence of Ni was found up to 8.2 nm beneath the top surface, suggesting the excellent corrosion resistance of this sample in Ringer’s solution.     

Fabrication of Cu2ZnSn(SxSe1−x)4 thin film solar cell by single step sulfo-selenization of stacked metallic precursors

We have synthesized an efficient Cu₂ZnSn(S_xSe_1−x)₄ (CZTSSe) absorbers by using single-step rapid thermal sulfo-selenization process of sputtered stack metallic precursor (Zn/Sn/Cu) films. The structural and morphological studies confirm that the suitability of the rapid thermal sulfo-selenization process for the synthesis of a CZTSSe absorber without any secondary phases with large grains. The annealing atmosphere with a mixed-chalcogen source enhances the grain growth of the CZTSSe absorber as compared with pure Cu₂ZnSnS₄ (CZTS) and Cu₂ZnSnSe₄ (CZTSe) absorbers. The CZTSSe thin film solar cell shows the best conversion efficiency of ∼7%.     

Electrical and optical properties of Si-doped indium tin oxides as transparent electrode and anti-reflection coating for solar cells

We have studied the electrical and optical properties of Si-doped indium tin oxides (ITSOs) as transparent electrodes and anti-reflection coatings for Si-based solar cells. The ITSO thin films were obtained by co-sputtering of ITO and SiO₂ targets under target power control. The resistivity of the ITSO thin films deposited at 0.625 in terms of power ratio (ITO/SiO₂) were 391 Ωcm. In this condition, the ITSO thin films showed very high resistivity compared to sputted pure ITO thin films (1.08 × 10⁻³ Ωcm). However, refractive index of ITSO thin films deposited at the same condition at 500 nm is somewhat lowered to 1.97 compared to ITO thin films (2.06). The fabricated graded refractive index AR coatings using ITO, ITSO, and SiO₂ thin films kept over 80% of transmittance regardless of their thickness varing from 97 nm to 1196 nm because of their low extinction coefficient. As the AR coating with graded refractive indices using ITO, ITSO, and SiO₂ layers was applied to general silicon-based solar cell, the current level increased nearly twice more than that of bare silicon solar cell without AR coating.     

Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

Thin-film multi-layer ceramic capacitors (MLCCs) were prepared using high-dielectric constant Bi₂Mg_2/3Nb_4/3O₇ thin-films deposited at room temperature via radio-frequency magnetron sputtering. The multi-layer capacitors, in sizes 0402, 0603 and 1005, were well equipped with both inner and outer Cu electrodes. The capacitances of the bi-layer capacitors were twice that of the single-layer version in sizes 0402, 0603, and 1005. The 200 nm-thick Bi₂Mg_2/3Nb_4/3O₇ thin-films would be suitable for thin-film multi-layer capacitor applications.     

Synthesis,Structure, and Reactivity of a Gold Carbenoid Complex That Lacks Heteroatom Stabilization

Hydride abstraction from the neutral gold cycloheptatrienyl complex [( P )Au(η¹‐C₇H₇)] ( P =P(tBu)₂(o‐biphenyl)) with triphenylcarbenium tetrafluoroborate at ?80 °C led to the isolation of the cationic gold cycloheptatrienylidene complex [( P )Au(η¹‐C₇H₆)]⁺ BF₄^? in 52 % yield, which was characterized in solution and by single‐crystal X‐ray diffraction. This cycloheptatrienylidene complex represents the first example of a gold carbenoid complex that lacks conjugated heteroatom stabilization of the electron‐deficient C1 carbon atom. The cycloheptatrienylidene ligand of this complex is reactive; it can be reduced by mild hydride donors, and converted to tropone in the presence of pyridine N‐oxide.