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用射频等离子体增强非平衡磁控溅射在Si100基底上沉积了金属Cu膜。研究了偏压,射频功率和磁场等沉积参数对膜性能的影响。用扫描电子显微镜(SEM)、原子力显微镜(AFM)、X射线衍射(XRD)和电子能谱(EM)检测了膜的表面形貌,结构和成分。结果表明,射频放电有利于表面均匀光滑、电导率高的Cu沉积膜的形成;沉积参数对沉积膜的性能有重要的影响。     

Characteristic Features of Photoluminescence of the Opal–Tellurite Glass–Er3+ Nanocomposite

We carried out a comparative investigation of the photoluminescence of Er³⁺ ions in tellurite glasses on melted quartz substrates and when introduced into the matrices of artificial opal. We have discovered an increase in the photoluminescence of the opal–tellurite glass–Er³⁺ nanocomposite in comparison with the specimens of the same glass on melted quartz substrates.     

用于近场集成光学头的面阵平面微透镜

讨论了采用常规的光刻热熔法及灰度掩模技术制作非梯度折射率型平面折射和平面衍射微透镜的情况。定性地分析了在不同的工艺条件下可能得到的平面端面微光学器件的种类和形貌特征。给出了在石英衬底表面通过光刻热熔工艺和氢离子束蚀刻所得到的球面及圆弧轮廓特征的凹形掩模的SEM照片 ,并对用于近场集成光学头的平面微透镜和半导体激光器的集成结构作了初步分析。利用这一技术所制成的平面折射微透镜可以很方便地与半导体光源等器件匹配耦合及集成固联     

Resistance changes in thin metallic films under ion bombardment

Resistance changes in thin films of copper, aluminium and bismuth have been studied under the bombardment of nitrogen, carbon and argon ions. Variations in resistance with implantation dose have been observed upto doses of ∼ 3 × 10¹⁷ ions/cm² for ion energies in the range 40 to 120 keV. The results are discussed in terms of desorption of gases from the film and a composite action of sputter removal of the film and its structural changes upon ion bombardment. A simple theoretical model is discussed which can qualitatively explain the experimental observations.     

Near-infrared diode laser spectroscopy of the HCSi radical

The , , and band spectra of HCSi radical were investigated by means of near-infrared diode laser spectroscopy to determine precise molecular constants for the and states. The detailed analysis of the rotationally resolved band spectra, studied for the first time in the present investigation, leads to the precise determination of molecular constants for the state associated with the Renner-Teller interaction. We obtained −0.15126663(53) and 495.00698(30) cm⁻¹ as the Renner-Teller parameter ε and the bending vibrational frequency ω₂, respectively. Based on the molecular constants for the and states, the rotational levels of the state were analyzed to obtain molecular constants and information on upper state perturbations. Using the available spectroscopic data, valence force fields for both the and states were estimated to aid in understanding the vibrational energy levels of the HCSi radical.