大型固体激光器光束定位稳定性分析

根据 ICF驱动器系统工程的要求 ,建立光学元件运动量与靶点光束定位之间关系 ,对稳定性进行初估。运用 B类评定方法、光线追迹方法和有限元数值模拟方法进行检验和校正 ,使其更具有可行性。并从结构随机振动理论出发 ,将结构用单自由度线性系统的平稳随机振动模拟 ,实现稳定性值激励源的重分。     

浙江杜鹃花属植物的研究

本文报道了浙江产杜鹃花属植物16 种及 1 变型其中白花满山红为新变型,丁香杜 鹃和江西杜码为浙江分布新记录.根据最新分类系统,本属分为 5 个亚属,在浙江都有 它们的代表,说明浙江的杜鹃花属植物在该属系统研究中的地位,此外,文中还附有分种 检 索表和种类列举 ( 分布、用途 )     

A local-world heterogeneous model of wireless sensor networks with node and link diversity

In this paper, we present a novel local-world model of wireless sensor networks (WSN) with two kinds of nodes: sensor nodes and sink nodes, which is different from other models with identical nodes and links. The model balances energy consumption by limiting the connectivity of sink nodes to prolong the life of the network. How the proportion of sink nodes, different energy distribution and the local-world scale would affect the topological structure and network performance are investigated. We find that, using mean-field theory, the degree distribution is obtained as an integral with respect to the proportion of sink nodes and energy distribution. We also show that, the model exhibits a mixed connectivity correlation which is greatly distinct from general networks. Moreover, from the perspective of the efficiency and the average hops for data processing, we find some suitable range of the proportion p of sink nodes would make the network model have optimal performance for data processing.     

HgCdTe长波光伏探测器的表面漏电流及1/f噪声研究

在同一Hg_1-xCd_xTe晶片上(x=0217)制备了单层ZnS钝化和双层 （CdTe+ZnS）钝化的两种器件，对器件烘烤前后的暗电流和1/f噪声进行了测试，烘烤 前发现，ZnS钝化的器件在反偏较大时具有较大的表面隧道电流，而这种表面漏电流是ZnS钝 化器件具有较大1/f噪声电流的原因，通过高分辨x射线衍射中的倒易点阵技术（recipr ocal space mapping,RSM）研究了单双层钝化对HgCdTe外延层晶格完整性的影响，发现单层 ZnS钝化的HgCdTe外延层产生了大量缺陷，而这些缺陷正是ZnS钝化器件具有较大表面漏电流 和1/f噪声的原因. 经过高温烘烤后，ZnS钝化的器件暗电流和1/f噪声增加，而双 层钝化器件经过高温烘烤后性能提高. RSM的研究表明，高温烘烤后ZnS钝化的HgCdTe外延层 产生大量缺陷，这些缺陷正是单层钝化器件表面漏电流和1/f噪声电流增加的原因. 关键词： HgCdTe 光伏探测器 钝化 表面漏电流 1/f噪声 倒易点     

$${f(\mathcal R)}$$ quantum cosmology

We have quantized a flat cosmological model in the context of the metric models, using the causal Bohmian quantum theory. The equations are solved and then we have obtained how the quantum corrections influence the classical equations.     

八角茴香与其伪品莽草的红外光谱三级鉴定研究

采用红外光谱三级鉴定的方法区分和鉴别了八角茴香及其伪品莽草。红外光谱三级鉴定即依次采用一维红外光谱、二阶导数谱和二维相关红外光谱,分辨率逐渐提高,谱图的差别也进一步放大。一维谱图中,两者整体峰形比较相似,但在3 400 cm-1附近八角茴香只出现一个特征峰3 392 cm-1,而莽草则出现3 482和3 387 cm-1两个特征峰。二阶导数谱在850～1 180 cm-1波段八角茴香的几个强峰峰强相对比较接近,其中1 015 cm-1为图中最强峰,而莽草的最强峰在1 070 cm-1附近;在1 180～1 500 cm-1波段八角茴香在1 469,1 454,1 442 cm-1附近的３个特征峰峰强明显强于1 292,1 276,1 266 cm-1附近的特征峰,而莽草则刚好相反。二维相关红外光谱中差异更明显,850～1 165 cm-1波段八角茴香在主对角线上的自动峰较强峰出现在1 153和1 000 cm-1,而莽草峰强较强的自动峰出现在911和878 cm-1;1 165～1 500 cm-1波段八角茴香呈现2个自动峰,而莽草则出现5个自动峰。可见红外三级鉴定方法是一种快速有效的鉴定中药材的方法。     

Kaleidoscope of life: A 24-neighbourhood outer-totalistic cellular automaton

One of the challenges of cellular automaton research is finding models with a low complexity and at the same time a rich dynamics. A measure of low complexity is the number of states in the model and the number of transition rules to switch between those states. In this paper, we propose a 2-dimensional 2-state cellular automaton that-though governed by a single simple transition rule-has a sufficiently rich dynamics to be computationally universal. According to the transition rule, a cell’s state is determined by the sum of the states of the cells at orthogonal or diagonal distances one or two from the cell (distance-2 Moore neighbourhood), but not by the previous state of the cell itself. Notwithstanding its simplicity, this model is able to generate a great variety of patterns, including several types of stable configurations, oscillators and patterns that move over cellular space (gliders). We prove the computational universality of the model by constructing a universal set of logic gates (NOT and AND) from these patterns. A key element in this proof is the shifting of phases and positions of signals such that they meet the input requirements of the logic gates. Similarities of the model with classical spin systems are also discussed.     

Surface flatness of optical thin films evaluated by gray level co-occurrence matrix and entropy

The surface characteristics of titanium oxide films evaluated by gray level co-occurrence matrices (GLCMs) and entropy are demonstrated experimentally. A PC-based measurement system was set up to detect the interference fringe of optical coating surface as captured by a Fizeau interferometer. Titanium oxide films were prepared by an electron-beam gun evaporation method. The proposed measuring system was used to evaluate the surface flatness of titanium oxide films coated on glass substrates. The variation of entropy in titanium oxide films before and after film deposition was found to be related to the root-mean-square (rms) surface roughness. Surface characteristics of thin films were fast measured by our proposed method and the test results were verified by atomic force microscopy (AFM) and scanning electrical microscopy (SEM).     

Preparation of ZrO2 ultrathin films as gate dielectrics by limited reaction sputtering—On growth delay time at initial growth stage

ZrO₂ thin films were produced by limited reaction sputtering process varying the deposition parameters. An interesting growth phenomenon was observed in the initial growth stage of amorphous samples, appearing to suppress film growth for the first several minutes. The structures of such ultrathin ZrO₂ films were investigated by high-resolution Rutherford backscattering (HR-RBS) and X-ray photoelectron spectroscopy (XPS). The results suggest that the existence of interfacial suboxides due to the adsorption-induced surface reaction and diffusion-induced internal reaction, lead to the deteriorated interfacial performance. The mechanism and effects of the growth delay time on the interfacial characteristics are discussed in detail.     

Transport properties of silicon

Electrical conductivity, thermal conductivity, and thermoelectric power of single-crystalline silicon are investigated at temperatures between 2 and 300 K. From the measured data we calculate the mean free path of electrons and phonons and separate diffusion part and phonon-drag part of the thermoelectric power. Using a new method, we evaluate the mean free path of those phonons which are responsible for the phonon drag effect.Dedicated to H.-J. Queisser on the occasion of his 60th birthday