Structural,Optical, and Electrical Characteristics of Zinc Oxide and Copper Oxide Films and Their Heterojunctions

In this paper, n-Zinc oxide/p-copper oxide heterojunctions were fabricated by RF-sputtering on indium tin oxide-covered glass substrates. The structural and optical properties of the copper oxide and zinc oxide films were analyzed by X-ray diffraction, Fourier transform infrared, scanning electronic microscopy and ultraviolet-visible spectroscopy. The electrical junction properties were investigated by current–voltage (I–V) characteristics. Additionally, both capacitance (C) and conductance (G) versus frequency (f) measurements were realized at room temperature. The junctions showed a rectifying behavior, and C and G varied with both voltage and frequency.     

Leakage currents in ferroelectric thin films

The main mechanisms of leakage currents in thin lead zirconate titanate (PZT) ferroelectric films prepared by the sol–gel method are discussed. Four specific regions are determined in I–V dependencies. At very weak fields (10–20 kV/cm), the current falls with the voltage increase as a result of depolarization. In the low fields region (about 70–100 kV/cm), the leakage current decreases with the decrease of voltage ramp speed and its components are the ohmic and displacement currents. In the high fields region (≥130 kV/cm), the leakage current increases with the decrease of step voltage ramp in contrast to the previous case. Possible conductivity mechanisms are the Poole– Frenkel emission and hopping conduction. In the transition region between above-mentioned ones (from 80–90 to ～130 kV/cm), an abrupt unstable increase of current is observed caused by breakdown of reverse bias Schottky barrier. Depolarization currents are studied for sol–gel PZT films prepared at different preparation conditions.     

Spin current pumping with two orthogonal electric fields in quantum wire

We study the problem of spin current pumping in a one-dimensional quantum wire when there exist two orthogonal Rashba spin-orbit couplings (SOCs) in different regions which evolve with time and can be induced by the perpendicular electric fields. On one hand, we demonstrate that the time-evolving Rashba SOC is equivalent to the spin-dependent electric field and the scheme may lead to the pure spin current associated with well suppressed charge current. On the other hand, we adopt the non-equilibrium Green's function method and numerically find that the parameter loop must satisfy certain condition for the successful pumping. We also study the effect of the Fermi energy and the inevitable disorder on the spin current. The implications of these results are discussed.     

神龙一号电子束质心运动测量研究

 在强流直线感应加速器中,电子束质心位置的控制是一项重要技术,要达到较好的控制效果,前提是对电子束质心位置进行准确的测量和定位。针对具有时间分辨的电子束质心位置的测量和确定,介绍了测量实验系统的建立和数据处理两个方面的研究工作。该处理方法在实际应用时能够将电子束质心位置的误差控制在1～2个像素内。用高速分幅相机以10 ns的时间间隔、3 ns的曝光时间获得了神龙一号加速器在漂移段出口处的电子束质心运动情况。结果表明：束的质心主要在半径为0.5 mm的区域内运动,束斑直径dFWHM值分别为8.4,8.8,8.5,9.3和7.6 mm,测量结果可以为束的调控提供准确参数。     

放电参数对毛细管放电泵浦的软X射线激光的影响

 以哈尔滨工业大学可调谐激光技术国家重点实验室中的Marx发生器的放电脉冲波形为基础,理论上模拟计算了在不同放电参数下充氩气的毛细管放电产生的等离子体状态和类氖氩离子3p_3s跃迁线的增益系数的时空演变过程。中心模型中,选取内径为3.1 mm 的陶瓷毛细管并充入初始密度为1.07×10^-6g·cm^-3的氩气,电流脉冲峰值为27.81 kA,脉冲宽度为61.4 ns。改变放电参数进行模拟,结果表明：上升前沿越陡,则增益系数越大,电流脉冲上升时间在20~40 ns,电流峰值在25~40 kA,电流脉冲宽度在50~70 ns范围内,毛细管放电产生的等离子体状态比较理想,可获得较高的增益系数。     

光学渡越辐射测量中能量分辨精度分析

 基于光学渡越辐射原理的用于高能强流电子束束流参数在线测量及诊断系统,具有时间响应快、分辨率高等特点,可以测量电子束的束剖面、发散角、能量等多个参数。分析了测量系统的结构参数（包括了透镜的焦距、成像面位置、CCD像元尺寸）对电子束能量测量精度的影响,并在理论上模拟了电子束的发散角的影响。还根据系统数据的特点,阐述了数据噪声对能量测量结果精度的影响,指出了光学渡越辐射测量中电子束能量分辨精度受到多种因素的影响,需要在数据处理时考虑修正。     

闪速存储器中应力诱生漏电流的产生机理

通过实验研究了闪速存储器存储单元中应力诱生漏电流(SILC)的产生机理. 研究结果表明，在低电场应力下，其可靠性问题主要是由载流子在氧化层里充放电引起，而在高电场下，陷阱和正电荷辅助的隧穿效应导致浮栅电荷变化是引起闪速存储器失效的主要原因. 分别计算了高场应力和低场应力两种情况下SILC中的稳态电流和瞬态电流的大小. 关键词： 闪速存储器 应力诱生漏电流 电容耦合效应 可靠性     

表面等离极化激元对电荷输运影响的自洽场理论研究Ⅱ——MIM体系分子轨道场的计算与分析

采用自洽场方法计算MIM体系在电场作用下分子场系数、态密度和局域电子态密度的变化.结果表明，分子场系数分布呈现弦函数形式；随电场增大，能带向深能量延伸并且能级峰间分离的更明显，以及构成电流通道的3d_m群原子轨道交叠态的重叠量增大，提高 了电荷输运的能力.该分析为探讨SPP对电荷输运影响的建立奠定了基础. 关键词： 分子轨道场系数 电流通道 态密度 局域电子态密度     

强反型区下纳米MOSFET的射频噪声机理分析

为了有效地表征纳米MOSFET强反型区下的射频噪声特性,研究了其噪声建模的方法。在分析45 nm MOSFET射频小信号等效电路参数提取结果的基础上,建立了该器件漏极电流噪声的简洁模型。该模型完整地表征了决定45 nm器件噪声机理的三个组成部分：本征漏极电流噪声、栅极管脚寄生电阻热噪声和栅漏衬底寄生电磁耦合噪声。噪声测量在验证所建模型准确性和精度的同时,还表明：45 nm MOSFET的本征漏极电流噪声为受抑制的散粒噪声,并且随着栅源偏压的降低受抑制性逐渐减弱直至消失。     

基于垂直引线和调制电流的三线环形磁导引

提出了一种在单层原子芯片上实现闭合且导引中心无磁场零点的环形磁导引的新方案. 芯片表面刻蚀的导线结构由同心等距三环线构成, 三环线的电流引线垂直于芯片表面. 加载直流电流后, 这种构型即可在芯片表面附近产生闭合的环形磁导引. 交流调制三环线电流后, 环形磁导引的势能极小值附近不再存在磁场零点且其磁场起伏小. 这种方案可用于基于物质波干涉的原子芯片陀螺仪研究.