GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)with an atomic layer deposited Al2O3gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated.Temperature dependent electrical characteristics are investigated.Different electrical behaviors are observed in two temperature regions,and the underlying mechanisms are discussed.It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current,which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions.Methods to further reduce the off-state drain leakage current are given.     

非制冷红外探测器读出电路的非均匀性研究

对于长线列的非制冷红外探测器组件, 不同探测元之间的非均匀性是衡量电路设计的关键指标. 为了实现长线列非制冷红外探测器的高性能读出, 本文设计了一种基于电流镜方式的非制冷红外探测器160线列读出电路, 电路由电流镜输入模块、电容负反馈互导放大器模块及相关双采样输出模块组成. 电路采用0.5 μm工艺制作完成. 通过合理设置电路中MOS管的参数和布局电流镜版图, 电路的非均匀性有了明显地改善. 通过测试, 电路的非均匀性小于1%, 器件总功耗约为100 mW, 并具有良好的低噪声特性, 输出噪声小于1 mV, 输出摆幅大于2 V. 该电路与160线列非制冷红外探测器互连后, 能较好地完成红外信号的读出, 在积分时间为20 μups的情况下, 器件的响应为0.294 mV/Ω, 整体性能良好. 该电路的研制对超长线列的非制冷红外冷探测器读出电路研制奠定了重要的技术基础.     

一种高电流密度下效率不降低的绿光有机电致发光器件

为了提高有机电致发光器件(OLED)在高电流密度下的发光效率, 在以C545T掺杂Alq₃为发光层的有机小分子绿光器件中的发光层与电子传输层之间插入超薄LiF绝缘层.结果表明, 器件的外量子效率随着电流密度的增加始终没有降低, 直至600 mA/cm²时达到最大值 4.79%, 是相同电流密度下的参考器件的外量子效率的7倍.     

Asymmetry in electrical properties of Al‐doped TiO2 film with respect to bias voltage

The energy diagram of RuO₂/Al‐doped TiO₂/RuO₂ structures was estimated from the capacitance–voltage and leakage current density–voltage curves. The Al‐doping profile in TiO₂ film was varied by changing position of the atomic layer deposition cycle of Al₂O₃ during the atomic layer deposition of 9 nm‐thick TiO₂ film. The interface between the TiO₂ film and the RuO₂ electrode containing Al‐doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of post annealing on the characteristics of In2S3 buffer layer grown by chemical bath deposition on a CIGS substrate

In₂S₃ as an alternative Cd-free buffer in Cu(In,Ga)Se₂ (CIGS) solar cells was deposited on CIGS substrate by a chemical bath deposition and characterized after post annealing to optimize film properties for CIGS solar cells. A uniform and pinhole-free In₂S₃ film was deposited on a CIGS substrate by H₂O₂ treatment prior to chemical bath deposition. The In₂S₃ layer was an amorphous state due to the co-existence of In–S, In–O, and In–OH bonds. Annealing at 200 °C induced copper diffusion from CIGS into In₂S₃ layer and lowered the band gap from 3.3 to 1.9 eV, leading to phase change from amorphous state to crystalline state. The conduction band alignment at the In₂S₃/CIGS interface can be controlled by the post annealing. The shunt current through In₂S₃ film was prevented down to the thickness of 30 nm and a 1.15 eV shallow defect was eliminated by the annealing. The results indicated that post annealing in air is a critical to fabricate CIGS solar cells with a sub-30 nm CBD-In₂S₃ buffer layer.     

不同电场下碳纳米管场致发射电流密度研究

本文运用密度泛函理论和金属电子论, 深入研究了碳纳米管场致发射电流的变化规律. 结果显示其发射电流密度取决于体系的态密度、赝能隙、管长和局域电场, 在不同范围电场下的变化规律不同. 在较低电场下, 发射电流密度随电场增强而近似线性增大(对应的宏观电场须小于18 V· μm^-1); 但在较高电场下, 发射电流密度随外电场增加呈现非周期性振荡增长趋势, 碳纳米管表现为电离发射. 本文进一步研究了金属性碳纳米管电导率在不同电场下的变化规律.     

瞬态大电流测量结温中校温曲线弯曲现象的研究

利用脉宽250 μs、占空比5%的0–1.5 A脉冲电流, 分别在50, 70, 90, 110, 130 ℃条件下, 对TO-247-2L封装型PIN快恢复二极管大电流下的校温曲线进行了测量分析. 研究发现, 恒定大电流条件下, 二极管的校温曲线随温度变化发生弯曲. 分析表明, 弯曲现象主要是由于串联电阻受迁移率的影响随温度发生变化而引起的. 通过实验测量及理论计算, 得到了准确的非线性校温曲线, 从而减小了瞬态大电流测量结温中的误差.     

Revisiting Aromaticity and Chemical Bonding of Fluorinated Benzene Derivatives

The electron delocalization of benzene (C₆H₆) and hexafluorobenzene (C₆F₆) was analyzed in terms of the induced magnetic field, nucleus-independent chemical shift (NICS), and ring current strength (RCS). The computed out-of-plane component of the induced magnetic field at a distance (r) greater than or equal to 1.0 Å above the ring center correlates well (R²>0.99) with the RCS value. According to these criteria, fluorination has two effects on the C₆ skeleton; concomitantly, the resonant effects diminish the π electron delocalization and the inductive effects decrease the charge density at the ring center and therefore reduce the magnitude of the paratropic current generated in this region. The equilibrium between both effects decreases aromaticity in the fluorinated benzene derivatives. These results can be extrapolated to determine the aromaticity of any derivative within the series of fluorinated benzene derivatives (C₆H_(6−n)F_n, where n=1–5).     

大肠杆菌在直流电场刺激作用下的生长机理研究

以钛网电极和铂网电极对培养瓶中大肠杆菌生长过程进行加电刺激,考察其在直流电场作用下的生长情况,并结合盐桥、循环伏安扫描、恒电流等技术对电场作用机理进行研究。结果表明,在电流密度为0.2275mA/cm2时,直流电场能有效促进大肠杆菌的生长,且随着电流密度的增大,菌体的生长速度逐步加快;当使用盐桥屏蔽电极反应产物时,单纯的离子电流对细胞的生长没有显著影响,水的阴极电解产物是促进微生物生长的主要因素。通过对析氢活性不同的铂网电极与钛网电极加相同电流密度0.0455mA/cm2的电场后,起促进生长作用的主要是阴极电解产物吸附氢和氢气,其中对摇瓶培养的细菌氢气的促进作用显著。     

Electrode Modified with Cobalt Cyclohexylbutyrate for the Determination of Low Molecular Weight Thiol Group Bearing Compounds Using Catalytic Stripping Voltammetry

Glassy carbon electrode, modified with cobalt(II) cyclohexylbutyrate monohydrate immobilized in polystyrene matrix is usable for determination of thiol group bearing compounds both in oxidized and reduced forms using catalytic stripping voltammetry. The measurements are carried out in acetate buffer (pH 4.3) containing Tween 40. After the accumulation step at −850 mV vs. Ag/AgCl a peak at −170 mV is observed on linear sweep voltammogram, the height of which is proportional to the concentration of added thiol. Addition of carbon nanotubes into polystyrene film enhances the sensitivity of the modified electrode. The detection limit is 1×10⁻⁶ mol dm⁻³ for all studied thiols. The electrode can be regenerated by exposing it to the potential between 300–600 mV.