Conduction mechanism of metal-TiO2–Si structures

The conduction model has been proposed for the metal-TiO₂–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO₂ target and annealing in the air at temperatures T?=?800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T?=?283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.     

Topological textures and their bifurcation processes in 2D ferromagnetic thin films

In this paper, by the use of the topological current theory, the topological structures and the dynamic processes in thin-film ferromagnetic systems are investigated directly from the viewpoint of topology. It is found that the topological charge of a thin-film ferromagnetic system can be changed by annihilation or creation processes of opposite polarized vortex–antivortex pairs taking place at space–time singularities of the normalized magnetization vector field of the system, the variation of the topological charge is integer and can further be expressed in terms of the Hopf indices and Brouwer degrees of the magnetization vector field around the singularities. Moreover, the change of the topological charge of the system is crucial to vortex core reversal processes in ferromagnetic thin films. With the help of the topological current theory and implicit function theorem, the processes of vortex merging, splitting as well as vortex core reversal are discussed in detail.     

Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

线缆系统电磁脉冲效应测量系统研制和试验

分析了实验室瞬态X射线产生的系统电磁脉冲(SGEMP)效应测试所面临的技术问题,提出了解决方法、措施以及实验室模拟瞬态X射线的SGEMP模拟试验方法。通过电子屏蔽、电磁屏蔽、光电隔离、信号对称提取等特殊技术处理,解决了SGEMP效应模拟试验方法和测量系统抗X射线、抗电磁辐射等技术问题,并在大型瞬态X射线模拟源上,测出了瞬态X射线辐照时金属腔内线缆的SGEMP效应波形及幅值。     

Spin-polarized current and tunnel magnetoresistance in heterogeneous single-barrier magnetic tunnel junctions

Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction.     

Two-dimensional model of elastically coupled molecular motors

A flashing ratchet model of a two-headed molecular motor in a two-dimensional potential is proposed to simulate the hand-over-hand motion of kinesins.Extensive Langevin simulations of the model are performed.We discuss the dependences of motion and efficiency on the model parameters,including the external force and the temperature.A good qualitative agreement with the expected behavior is observed.     

Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR

In this paper, a model to calculate the dark current of quantum well infrared photodetectors at high-temperature regime is presented. The model is derived from a positive-definite quantum probability-flux and considers thermionic emission and thermally-assisted tunnelling as mechanisms of dark current generation. Its main input data are the wave functions obtained by time-independent Schrodinger equation and it does not require empirical parameters related to the transport of carriers. By means of this model, the dark current of quantum well infrared photodetectors at high-temperature regime is investigated with respect to the temperature, the barrier width, the applied electric field and the position of the first excited state. The theoretical results are compared with experimental data obtained from lattice-matched InAlAs/InGaAs, InGaAsP/InP on InP substrate and AlGaAs/GaAs structures with rectangular wells and symmetric barriers, whose absorption peak wavelengths range from MWIR to VLWIR. The corresponding results are in a good agreement with experimental data at different temperatures and at a wide range of applied electric field.