Quantum Lax Operators and Discrete 2+1-Dimensional Integrable Models

A specific quantum Lax operator, forming a quantum U _q (sl n) chain, is suggested. The intertwining R L L relation is proved. The invariant local 2+1-dimensional reformulation of the auxiliary linear problem for the L-operator is discussed.     

Altering the Remote Past

An abstract treatment of Bell inequalities in proposed, in which the parameters characterizing Bell's observable can be times rather than directions. The violation of a Bell inequality might then be taken to mean that a property of a system can be changed by the timing of a distant measurement, which could take place in the future.     

Fock Theories and Quantum Logics

The notion of Fock theory is introduced in the framework of quantum logics, which are here orthomodular atomic lattices satisfying the covering property. It is shown that there are some fundamental facts concerning particles, which may be successfully discussed in this general context. One of these facts is to establish the theoretical conditions for considering particles as sharply defined entities. The other refers to the theoretical circumstances, which almost impose to consider that some particles have a structure, meaning they are composed from other particles. This last problem is strongly related with the conservative time evolutions.     

非线性应变波耦合组的吸引子的正则性

本文研究了非线性应变波方程与Schr(?)dinger方程耦合系统Cauchy问题吸引 子的正则性.获得了该系统在空间Eo中存在整体吸引子Ao,并且Ao与E1中的强吸 引子A1相等.     

非等同双原子与双模腔场拉曼相互作用模型的腔场谱

研究了非等同双原子与双模腔场拉曼相互作用模型的腔场谱,分析了谱结构随原子与腔场相对耦合常数R=g2/g1的变化规律,发现R对真空场、弱场、强场谱结构都有不同程度的影响.当R=1或R=0时,一般呈现简并的谱结构,而当R介于0与1之间时,腔场谱一般呈现复杂的非对称多峰结构.同时还发现,当R固定不变时,低频腔场初始场强对高频真空场谱结构也有较明显的影响. 关键词： 量子光学 腔场谱 拉曼相互作用 双模腔场     

A Generalization of a Two-Parameter Quantization for the Group GL 2(k)

We generalize a well-known two-parameter quantization for the group GL ₂(k) (over an arbitrary field k). Specifically, a certain class of Hopf algebras is constructed containing that quantization. The algebras are constructed given an arbitrary coalgebra and an arbitrary pair of its commuting anti-isomorphisms, and are defined by quadratic relations. They are densely linked to the compact quantum groups introduced by Woronowicz. We give examples of Hopf algebras that can be rowed up to the two-parameter quantization for GL ₂(k).     

A method and program for mass quantum chemical calculations of protein—ligand docking complexes

A new fast computational method for mass calculations of docking complexes by the AM1/PM3 semiempirical methods is proposed. The computation time is shortened by at least an order of magnitude compared to alternative schemes of quantum chemical calculations. The root-mean-square deviation of the AM1 calculated energies of formation of complexes from the results obtained by conventional diagonalization procedure is at most 0.4 kcal mol⁻¹. Published in Russian in Izvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 418–420, February, 2008.     

Absorption measurement of strained SiGe nanostructures deposited by UHV-CVD

In order to obtain a low band gap photocell based on the widely spread silicon technology, e.g. for thermophotovoltaics, SiGe nanostructures can be introduced into a monocrystalline silicon photocell. Beforehand, it is necessary to know the absorption coefficient of the SiGe quantum wells. On a silicon (1 0 0) substrate multiple Si/SiGe quantum well structures were grown by UHV-CVD. The Ge concentration and the well width were used as growth parameters. To obtain significant absorption, the experiment was set up to allow for 200 internal reflections.The total reflection of the light results in a standing electromagnetic wave. The absorption coefficient was obtained from the experimental data taking the geometry and the electric field distribution in the absorbing layer into account. The influence of well width and germanium content on the absorption was investigated with the goal of maximizing the absorption for photons with energies below the band gap energy of silicon. The measurement results are compared with a theoretical model, which takes the band structure of strained SiGe including confinement effects into account.