Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry

In the paper, chemical mechanical planarization(CMP) of Ge2Sb2Te5(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate(RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope(OM) and scanning electron microscope(SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010.     

板条Nd:YAG晶体的合成盘抛光技术

针对高功率板条激光器核心工作器件——板条Nd:YAG晶体的超精密加工开展研究,分析了具有特殊构型的板条Nd:YAG晶体元件的加工性能及工艺难点,提出了一种新的基于合成盘抛光的板条Nd:YAG晶体加工工艺,并对规格为100mm×30mm×3mm的板条Nd:YAG晶体进行了加工实验。实验结果表明,合成盘抛光可以很好地控制元件的塌边现象;通过磨料的优化选择,在合成盘抛光工艺中匹配合适粒度的Al2O3磨料能够实现元件的低缺陷加工,元件下盘后的全反射面平面度达0.217λ(1λ=632.8nm),端面平面度达到0.06λ,表面粗糙度达0.55nm(RMS),端面楔角精度可达2″。     

光学面形的轮带光学抛光方法研究

鉴于光学零件高陡度凹曲面的抛光是光学加工的一个难题,轮带光学确定性抛光方法是解决此类零件抛光的有效方法之一;提出轮带光学抛光技术的原理和方法。研究了轮带光学抛光方法修形的可行性,采用五轴精密数控机床系统对一块直径Ф80 mm的K9玻璃平面样镜进行了修形试验,经过3次迭代修形使其面形精度均方根误差(RMS)由初始的0109 λ提高到0028 λ,平均每次收敛率达到13。实验结果表明,应用轮带光学抛光技术进行光学镜面修形,面形收敛速度较快,加工精度较高。本实验验证了轮带光学抛光技术的修形能力,为高陡度光学零件的抛光提供了研究基础。     

Integrating on-line process control and imperfect corrective maintenance: An economical design

Existing studies of on-line process control are concerned with economic aspects, and the parameters of the processes are optimized with respect to the average cost per item produced. However, an equally important dimension is the adoption of an efficient maintenance policy. In most cases, only the frequency of the corrective adjustment is evaluated because it is assumed that the equipment becomes “as good as new” after corrective maintenance. For this condition to be met, a sophisticated and detailed corrective adjustment system needs to be employed. The aim of this paper is to propose an integrated economic model incorporating the following two dimensions: on-line process control and a corrective maintenance program. Both performances are objects of an average cost per item minimization. Adjustments are based on the location of the measurement of a quality characteristic of interest in a three decision zone. Numerical examples are illustrated in the proposal.     

抛光加工参数对KDP晶体材料去除和表面质量的影响

针对软脆易潮解KDP功能晶体材料的加工难点,提出了一种基于潮解原理的无磨料化学机械抛光新方法,研制了一种非水基无磨料抛光液,该抛光液结构为油包水型微乳液.通过控制抛光液中的含水量可以方便地控制KDP晶体静态蚀刻率和抛光过程中材料的去除率.实验中还研究了不同加工参数对晶体材料去除率和已加工表面质量的影响.该抛光液的设计为易潮解晶体的超精密抛光加工提供了一条新的技术途径.     

氧化硅/氧化铁复合磨粒用于硬盘基片的抛光研究

本文以HNO3、NaOH、Fe(NO3)3和SiO2浆料为原料,采用沉淀法制备了1种SiO2/Fe2O3复合磨粒,通过X射线衍射仪(XRD)、飞行时间二次离子质谱仪(TOF-SIMS)和扫描电子显微镜(SEM)对其结构进行表征,结果表明Fe2O3包覆到SiO2的表面,复合粒子具有很好的分散性.用UNIPOL-1502抛光机研究了所制备复合磨粒在镍磷敷镀的硬盘基片中的抛光性能,抛光后硬盘基片的表面粗糙度Ra由抛光前的8.87nm降至3.73nm;抛光后表面形貌的显微镜观测结果表明新制备的复合磨粒表现出较好的抛光性能.     

Investigation of non-diamond carbon phases and optical centers in thermochemically polished polycrystalline CVD diamond films

Polycrystalline chemical vapor deposition (CVD) diamonds films grown on silicon substrates using the microwave-enhanced CVD technique were polished using the thermochemical polishing method. The surface morphology of the samples was determined by optical and scanning electron microscopes before and after polishing. The average surface roughness of the as-grown films determined by the stylus profilometer yielded 25 μm on the growth side and about 7 μm on the substrate side. These figures were almost uniform for all the samples investigated. Atom force microscopic measurements performed on the surface to determine the average surface roughness showed that thermochemical polishing at temperatures between 700 °C and 900 °C reduced the roughness to about 2.2 nm on both the substrate and growth sides of the films. Measurements done at intermittent stages of polishing using confocal micro-Raman spectroscopy showed that thermochemical polishing is accompanied by the establishment of non-diamond carbon phases at 1353 cm⁻¹ and 1453 cm⁻¹ at the initial stage of polishing and 1580 cm⁻¹ at the intermediate stage of polishing. The non-diamond phases vanish after final fine polishing at moderate temperatures and pressures. Photoluminescence of defect centers determined by an Ar⁺ laser (λl_exct= 514.532 nm) showed that nitrogen-related centers with two zero-phonon lines at 2.156 eV and 1.945 eV and a silicon-related center with a zero-phonon line at 1.681 eV are the only detectable defects in the samples. Received: 26 July 1999 / Accepted: 15 November 1999     

Experimental investigation of the parameter dependency of the removal rate of thermochemically polished CVD diamond films

Parameters controlling the removal rate of chemical vapor deposition (CVD) diamond films thermochemically polished on transition metals in a mixed argon-hydrogen atmosphere were investigated. The ambient temperature, the pressure exerted on the diamond film, the angular velocity of the polishing plate, the frequency and the amplitude of the transverse vibrations were among the parameters used in the experiments. Temperature measurements showed that the removal rate was increased exponentially with increasing magnitude of the parameter. An exponential increase in the removal rate was also observed with increasing pressure and hence with increasing contact between the diamond film and the polishing plate. However, an exponential decrease in the removal rate was observed with increasing angular velocity of the polishing plate. The removal rate obtained with the application of transverse vibrations was more than three times that obtained without transverse vibrations. Moreover, the removal rate was seen to be higher at resonant frequencies. An increase in the removal rate with increasing amplitude of the transverse vibrations was also observed. Raman measurements carried out on the films to determine the presence of the non-diamond carbon layer after thermochemical polishing revealed non-diamond Raman lines only for films polished at 1000 °C and 1050 °C for the temperature range 750–1050 °C. Received: 27 October 1999 / Accepted: 2 February 2000     

基于弹性力学的应力加工方法有限元分析

基于弹性力学理论,对应力加工方法的原理、算法及玻璃薄板对复杂面型的模拟进行了研究。在球面镜周边分布力和力矩的状态下对球面变形为轴对称非球面进行了分析,以抛物面镜为例,采用有限元法对玻璃薄板周边施加均布弯矩后产生的变形量和最大应力进行了模拟、分析和仿真计算,得出的仿真结果与球面和抛物面之间的理想变形量进行比较,验证了基于弹性力学的应力加工方法加工旋转对称非球面理论的正确性。     

熔融石英玻璃无水环境固结磨粒抛光特性

为了克服游离磨粒抛光的随机性、磨料浪费以及产生的水合层等问题,提出了一种无水环境下熔融石英玻璃固结磨粒抛光技术。研究实现了稳定的抛光轮烧结工艺,并应用于熔融石英玻璃抛光加工,通过对加工产物和抛光轮粉末进行EDS能谱分析和XRD衍射分析,从微观上初步阐述了固结磨粒抛光的去除机理;从宏观上探索压力和转速对去除效率和表面粗糙度的影响。实验结果表明：加工过程中,在法向力和剪切力作用下,CeO₂磨粒和熔融石英发生化学反应,CeO₂将SiO₂带出玻璃,实现材料去除;同时,压力和转速对加工效率影响并不遵循Preston公式,温升和排屑成为决定去除效率的关键。