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51.
Chemical mechanical planarization of Ge_2Sb_2Te_5 using IC1010 and Politex reg pads in acidic slurry
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In the paper, chemical mechanical planarization(CMP) of Ge2Sb2Te5(GST) is investigated using IC1010 and Politex reg pads in acidic slurry. For the CMP with blank wafer, it is found that the removal rate(RR) of GST increases with the increase of pressure for both pads, but the RR of GST polished using IC1010 is far more than that of Politex reg. To check the surface defects, GST film is observed with an optical microscope(OM) and scanning electron microscope(SEM). For the CMP with Politex reg, many spots are observed on the surface of the blank wafer with OM, but no obvious spots are observed with SEM. With regard to the patterned wafer, a few stains are observed on the GST cell, but many residues are found on other area with OM. However, from SEM results, a few residues are observed on the GST cell, more dielectric loss is revealed about the trench structure. For the CMP with IC1010, the surface of the polished blank wafer suffers serious scratches found with both OM and SEM, which may result from a low hardness of GST, compared with those of IC1010 and abrasives. With regard to the patterned wafer, it can achieve a clean surface and almost no scratches are observed with OM, which may result from the high-hardness SiO2 film on the surface, not from the soft GST film across the whole wafer. From the SEM results, a clean interface and no residues are observed on the GST surface, and less dielectric loss is revealed. Compared with Politex reg, the patterned wafer can achieve a good performance after CMP using IC1010. 相似文献
52.
针对高功率板条激光器核心工作器件——板条Nd:YAG晶体的超精密加工开展研究,分析了具有特殊构型的板条Nd:YAG晶体元件的加工性能及工艺难点,提出了一种新的基于合成盘抛光的板条Nd:YAG晶体加工工艺,并对规格为100mm×30mm×3mm的板条Nd:YAG晶体进行了加工实验。实验结果表明,合成盘抛光可以很好地控制元件的塌边现象;通过磨料的优化选择,在合成盘抛光工艺中匹配合适粒度的Al2O3磨料能够实现元件的低缺陷加工,元件下盘后的全反射面平面度达0.217λ(1λ=632.8nm),端面平面度达到0.06λ,表面粗糙度达0.55nm(RMS),端面楔角精度可达2″。 相似文献
53.
鉴于光学零件高陡度凹曲面的抛光是光学加工的一个难题,轮带光学确定性抛光方法是解决此类零件抛光的有效方法之一;提出轮带光学抛光技术的原理和方法。研究了轮带光学抛光方法修形的可行性,采用五轴精密数控机床系统对一块直径Ф80 mm的K9玻璃平面样镜进行了修形试验,经过3次迭代修形使其面形精度均方根误差(RMS)由初始的0109 λ提高到0028 λ,平均每次收敛率达到13。实验结果表明,应用轮带光学抛光技术进行光学镜面修形,面形收敛速度较快,加工精度较高。本实验验证了轮带光学抛光技术的修形能力,为高陡度光学零件的抛光提供了研究基础。 相似文献
54.
Existing studies of on-line process control are concerned with economic aspects, and the parameters of the processes are optimized with respect to the average cost per item produced. However, an equally important dimension is the adoption of an efficient maintenance policy. In most cases, only the frequency of the corrective adjustment is evaluated because it is assumed that the equipment becomes “as good as new” after corrective maintenance. For this condition to be met, a sophisticated and detailed corrective adjustment system needs to be employed. The aim of this paper is to propose an integrated economic model incorporating the following two dimensions: on-line process control and a corrective maintenance program. Both performances are objects of an average cost per item minimization. Adjustments are based on the location of the measurement of a quality characteristic of interest in a three decision zone. Numerical examples are illustrated in the proposal. 相似文献
55.
56.
本文以HNO3、NaOH、Fe(NO3)3和SiO2浆料为原料,采用沉淀法制备了1种SiO2/Fe2O3复合磨粒,通过X射线衍射仪(XRD)、飞行时间二次离子质谱仪(TOF-SIMS)和扫描电子显微镜(SEM)对其结构进行表征,结果表明Fe2O3包覆到SiO2的表面,复合粒子具有很好的分散性.用UNIPOL-1502抛光机研究了所制备复合磨粒在镍磷敷镀的硬盘基片中的抛光性能,抛光后硬盘基片的表面粗糙度Ra由抛光前的8.87nm降至3.73nm;抛光后表面形貌的显微镜观测结果表明新制备的复合磨粒表现出较好的抛光性能. 相似文献
57.
J. A. Weima A. M. Zaitsev R. Job G. Kosaca F. Blum G. Grabosch W. R. Fahrner J. Knopp 《Journal of Solid State Electrochemistry》2000,4(8):425-434
Polycrystalline chemical vapor deposition (CVD) diamonds films grown on silicon substrates using the microwave-enhanced CVD
technique were polished using the thermochemical polishing method. The surface morphology of the samples was determined by
optical and scanning electron microscopes before and after polishing. The average surface roughness of the as-grown films
determined by the stylus profilometer yielded 25 μm on the growth side and about 7 μm on the substrate side. These figures
were almost uniform for all the samples investigated. Atom force microscopic measurements performed on the surface to determine
the average surface roughness showed that thermochemical polishing at temperatures between 700 °C and 900 °C reduced the roughness
to about 2.2 nm on both the substrate and growth sides of the films. Measurements done at intermittent stages of polishing
using confocal micro-Raman spectroscopy showed that thermochemical polishing is accompanied by the establishment of non-diamond
carbon phases at 1353 cm−1 and 1453 cm−1 at the initial stage of polishing and 1580 cm−1 at the intermediate stage of polishing. The non-diamond phases vanish after final fine polishing at moderate temperatures
and pressures. Photoluminescence of defect centers determined by an Ar+ laser (λlexct= 514.532 nm) showed that nitrogen-related centers with two zero-phonon lines at 2.156 eV and 1.945 eV and a silicon-related
center with a zero-phonon line at 1.681 eV are the only detectable defects in the samples.
Received: 26 July 1999 / Accepted: 15 November 1999 相似文献
58.
Parameters controlling the removal rate of chemical vapor deposition (CVD) diamond films thermochemically polished on transition
metals in a mixed argon-hydrogen atmosphere were investigated. The ambient temperature, the pressure exerted on the diamond
film, the angular velocity of the polishing plate, the frequency and the amplitude of the transverse vibrations were among
the parameters used in the experiments. Temperature measurements showed that the removal rate was increased exponentially
with increasing magnitude of the parameter. An exponential increase in the removal rate was also observed with increasing
pressure and hence with increasing contact between the diamond film and the polishing plate. However, an exponential decrease
in the removal rate was observed with increasing angular velocity of the polishing plate. The removal rate obtained with the
application of transverse vibrations was more than three times that obtained without transverse vibrations. Moreover, the
removal rate was seen to be higher at resonant frequencies. An increase in the removal rate with increasing amplitude of the
transverse vibrations was also observed. Raman measurements carried out on the films to determine the presence of the non-diamond
carbon layer after thermochemical polishing revealed non-diamond Raman lines only for films polished at 1000 °C and 1050 °C
for the temperature range 750–1050 °C.
Received: 27 October 1999 / Accepted: 2 February 2000 相似文献
59.
60.
为了克服游离磨粒抛光的随机性、磨料浪费以及产生的水合层等问题,提出了一种无水环境下熔融石英玻璃固结磨粒抛光技术。研究实现了稳定的抛光轮烧结工艺,并应用于熔融石英玻璃抛光加工,通过对加工产物和抛光轮粉末进行EDS能谱分析和XRD衍射分析,从微观上初步阐述了固结磨粒抛光的去除机理;从宏观上探索压力和转速对去除效率和表面粗糙度的影响。实验结果表明:加工过程中,在法向力和剪切力作用下,CeO2磨粒和熔融石英发生化学反应,CeO2将SiO2带出玻璃,实现材料去除;同时,压力和转速对加工效率影响并不遵循Preston公式,温升和排屑成为决定去除效率的关键。 相似文献