晶格失配对异质外延超薄膜生长中成核特性的影响

利用动力学蒙特卡罗方法模拟了异质外延超薄膜生长中的成核过程.研究了薄膜与衬底的晶格失配对超薄膜生长中成核密度、平均核尺寸、标度关系及生长模式的影响.结果发现产生压（张）应变的晶格负（正）失配使生长过程更早（迟）从成核区进入过渡区，失配越大，这一效应越明显.在相同的沉积条件下，负失配导致超薄膜形成较低的成核密度与较大的平均核尺寸，而正失配则相反.成核密度满足标度关系Ns≈(F/D)χ，随着失配度从-0.04增加到0.02，标度系数χ从0.37逐渐减小到0.33，对应超薄膜生长过程从包含二聚体扩散模式转变到无 关键词： 薄膜生长 成核 晶格失配 蒙特卡罗模拟     

磁性Salisbury屏的高频响应

研究了利用磁性薄膜构造Salisbury屏的可能性及其在微波频段的反射率频率特性.结果表明，利用铁磁性材料在铁磁共振频率附近磁化率具有χ″>χ′的特性，可以构造出对电磁波有良好吸收性能的磁性Salisbury屏.通过对铁磁材料高频磁谱物理机理的分析后指出，具有弛豫型共振磁谱的铁磁材料可以构造出薄膜型Salisbury屏，其厚度为微米甚至亚微米量级.反射率的频率特性与磁性材料的特征阻抗z-r有关，它取决于铁磁共振频率和静态磁化率.反射率的频率响应显示磁性薄膜Salisbury屏具有较宽的吸收带宽. 关键词： 磁性Salisbury屏 反射率 频带响应 磁性薄膜     

新型二硫纶·菲咯啉-5，6-二酮合铜(Ⅱ)配合物的磁性研究

报道了新合成的二氰基二硫纶·菲咯啉-5，6-二酮合铜(Ⅱ)配合物CuLL′(L=mnt^2-, 1,2-dicyano-1,2-ethylenedithiolate; L′=phen-5，6-dione, 1,10-phenanthroline-5,6-dione)的变温磁化率和电子顺磁共振波谱表征结果. 发现微晶粉体型的标题配合物CuLL′具有一定的顺磁性，形成四配位的近似于方形的结构. 探讨了这种配合物磁学特性与结构的关系.     

Ceramic Films via Organometallic Complex as Single Source Precursor

Fe2(CO)6(μ-S2) was used as a single source precursor in attempt to produce FeS film via MOCVD. Pyrolysis of Fe2(CO)6(μ-S2) at temperature below 500℃ produced Fe1-xS or Fe7S8 powder as indicated by its powder X-ray spectra. At 750 ℃, polycrystalline FeS powder was obtained. In film deposition, polycrystalline Fe1-xS or Fe7Ss films were obtained on Si(100) and Ag/Si(100) substrates below 500 ℃. SEM micrographs showed the film on Si(100) substrate containing whisker like grains. However, pillar like grains were obtained on Ag/Si(100) substrate.Deposition rates are also different for different substrates as evaluated by the thickness of the films, which were obtained by SEM micrographs of the cross section of the films. At 750℃, similar polycrystalline Fe1-xS or Fe7S8 film was obtained.     

Study on the covalence of Cu and chemical bonding in an inorganic fullerene-like molecule, [CuCl]20[Cp*FeP5]12 [Cu-(CH3CN)+2Cl-]5, by a density functional approach

The electronic structure and chemical bonding in a recently synthesized inorganic fullerene-like molecule, [CuCl]₂₀[Cp*FeP₅]₁₂[Cu-(CH₃CN) ⁺ ₂Cl⁻]₅ has been studied by a density functional approach. Geometrical optimization of the three basic structural units of the molecule is performed with Amsterdam Density Functional Program. The results are in agreement with the experiment. Localized MO’s obtained by Boys-Foster method give a clear picture of the chemical bonding in this molecule. The reason why CuCl can react with Cp*FeP₅ in solvent CH₃CN to form the fullerene-like molecule is explained in terms of the soft-hard Lewis acid base theory and a new concept of covalence.     

Study on the covalence of Cu and chemical bonding in an inorganic fullerene-like molecule, [CuCl]_(20)[Cp~*FeP_5]_(12)[Cu-(CH_3CN)_2~+Cl~-]_5, by a density functional approach

The titled inorganic fullerene-like molecule (hereafter abbreviated as IFM) was recently synthe-sized by Bai et al.[1], which attracts a lot of interests from inorganic and organometallic chemists, and questions are raised for this smart molecule: (ⅰ) Why CuCl can react with Cp*FeP5 in solvent CH3CN to form IFM? (ⅱ) What is the nature of chemical bond-ing? (ⅲ) What is the covalence of Cu in this mole-cule? In this paper we intend to answer these questions in terms of the soft-hard …     

ΓD‐convergence for a class of quasilinear elliptic equations in thin structures

We study the asymptotic behaviour of the solution of a stationary quasilinear elliptic problem posed in a domain Ω^(ε) of asymptotically degenerating measure, i.e. meas Ω^(ε) → 0 as ε → 0, where ε is the parameter that characterizes the scale of the microstructure. We obtain the convergence of the solution and the homogenized model of the problem is constructed using the notion of convergence in domains of degenerating measure. Proofs are given using the method of local characteristics of the medium Ω^(ε) associated with our problem in a variational form. Copyright © 2005 John Wiley & Sons, Ltd.     

Influence of radiation on thin ZnS-Tb films

Changes in thin zinc-sulfide films under the action of the γ-radiation of Co⁶⁰ are studied by investigating electroluminescence spectra of terbium embedded in these films as a luminescent probe. It is shown that changes in the relation of the intensities of bands, a decrease in their halfwidth and the background component, and simplification of the spectrum are observed in a short-wave region of the Tb radiation spectrum that corresponds to⁵D₃→⁷F_j transitions. The same modification of the radiation spectrum is characteristic of ZnS films whose crystalline structure is ordered in the course of thermal annealing at a temperature of 350°C. Based on the analysis of the data obtained it is inferred that irradiating the ZnS films with small radiation doses of 10⁴–10⁵ rad leads to the ordering of their crystalline structure due to the elimination of one of the types of structural defects. Institute of Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauka Ave., Kiev-28, 252650. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 338–341, May–June, 1997.     

不良导体热系数和热体散热率测量方法研究(英文)

本文介绍一种直接测量散热率新方法．进而测出不良导体的热系数。该方法，减小了由间接测量散热率所带来的误差，实验装置简单，操作方便，参数少，测量结果的精确性和重复性都有较大提高，更重要的是这一新的实验方法突出了物理思想。     

Noise-assisted mound coarsening in epitaxial growth

Two types of mechanisms are proposed for mound coarsening during unstable epitaxial growth: stochastic, due to deposition noise, and deterministic, due to mass currents driven by surface energy differences. Both yield the relation H=(RWL)² between the typical mound height W, mound size L, and the film thickness H. An analysis of simulations and experimental data shows that the parameter R saturates to a value which discriminates sharply between stochastic () and deterministic () coarsening. We derive a scaling relation between the coarsening exponent 1/z and the mound-height exponent which, for a saturated mound slope, yields . Received: 11 November 1997 / Revised in final form: 28 November 1997 / Accepted: 28 November 1997