Nonlinear resonant tunneling diode (RTD) circuits for microwave A/D conversion

Short-duration electrical pulses play important roles in ultrafast time-domain metrology: they are used to sample rapidly varying signals or as probe signals in ranging radars, time-domain reflectometry and in communication. In this work, we design a nonlinear transmission, which is loaded with resonant tunneling diode to be suitable for microwave A/D conversion. A resonant tunneling diode (RTD) has a negative differential resistance that means when the voltage increases the current decreases. The equivalent circuit of monostable line is given. The simulation is performed by using OrCad program. Results show that a spike is produced and after a charging time constant, another switching occurs. Hence – similar to a relaxation oscillator – the spiking period is determined by the amplitude and frequency of the input current. The transmission line itself ensures the generation and propagation of identical spikes, such as solitons formed after few diodes.     

Effect of calcination temperature on the structure of vanadium phosphorus oxide materials and their catalytic activity in the decomposition of 2-propanol

The synthesis of vanadyl phosphate by reaction of an alcoholic solution of V₂O₅ and o-H₃PO₄ has been studied. The solids obtained were investigated by various physico-chemical techniques as in situ X-ray diffraction (XRD), thermogravimetric analysis (TGA), and differential thermal analysis (DTA) under inert atmosphere. The compounds have been further characterized by infrared and UV–Visible spectroscopies. The isopropanol conversion is carried out to evaluate the catalytic activity of the samples. The isopropanol conversion increases with the reaction temperature from 433 to 503 K for vanadyl phosphorus oxides calcined at a different temperature. However, the conversion attains 100% at 503 K, and the solid calcined at 973 K exhibits high selectivity towards propene (100% at 503 K).     

Transmission and small angle scattering of 15 MeV electrons in silicon single crystals

Abstract

A novel technique for the study of structural damage incurred by single crystal silicon targets during ion implantation is described. The method is based upon copper-decoration of the vacancy rich damaged region, followed by radiochemical measurement of the resulting copper distribution. Utilizing neutron activation, sharply peaked radiocopper profiles are obtained, which are believed to represent the depth distributions of large, relatively immobile defects such as vacancy clusters, voids, or crystalline faults. A more efficient decoration of isolated vacancy-type defects is realized when Wu is employed as a radioisotopic tracer in the decoration step, however, the rapid diffusivity of these smaller species leads to less sharply defined radiocopper profiles. Both the neutron activation and radiotracer modifications of the technique yield damage profiles which are significantly shallower than the corresponding implanted impurity profiles.     

The sp2 and sp3 fractions of unknown carbon materials: electron energy-loss near-edge structure analysis of C-K spectra acquired under the magic-angle condition by the electron nanobeam technique

A method is described for the quantification of the sp², sp³ and intermediate hybridizations in several carbon (C) material samples. Electron energy-loss near-edge spectra were acquired using fast electrons (120 keV) in an electron microscope in nanobeam configuration under the so-called ”magic-angle” condition, and were analysed to extract the sp² and sp³ fractions, and identify the possible mixed sp^2+ε hybridizations. The method consists in projecting the unknown spectra on a basis made up of pure sp² and sp³ spectra, obtained under the same experimental conditions from graphite and diamond crystals, respectively. The residual spectra contain information about the intermediate hybridizations sp^2+ε occurring in the samples. The method was successfully tested on “ab initio” numerically generated spectra relative to amorphous C materials. Finally, it was applied to actual C amorphous and pyrolytic samples, and results were compared to those obtained by the most commonly used, conventional ”three-Gaussian” method. The combined application of electron diffraction and spectroscopy, in the nanobeam configuration, yielded useful information about the atomic and electronic structure from very small volumes of the unknown C material.     

Indandione-Terminated Quinoidal Compounds for Low-Bandgap Small Molecules with Strong Near-Infrared Absorption: Effect of Conjugation Length on the Properties

Low-bandgap organic semiconductors have attracted much attention for their multiple applications in optoelectronics. However, the realization of narrow bandgap is challenging particularly for small molecules. Herein, we have synthesized four quinoidal compounds, i. e., QSN3 , QSN4 , QSN5 and QSN6 , with electron rich S,N-heteroacene as the quinoidal core and indandione as the end-groups. The optical bandgap of the quinoidal compounds is systematically decreased with the extension of quinoidal skeleton, while maintaining stable closed-shell ground state. QSN6 absorbs an intense absorption in the first and second near-infrared region in the solid state, and has extremely low optical bandgap of 0.74 eV. Cyclic voltammetry analyses reveal that the lowest unoccupied molecular orbital (LUMO) energy levels of the four quinoidal compounds all lie below −4.1 eV, resulting in good electron-transporting characteristics in organic thin-film transistors. These results demonstrated that the combination of π-extended quinoidal core and end-groups in quinoidal compounds is an effective strategy for the synthesis of low-bandgap small molecules with good stability.     

Zur Methodik der Autoradiographie im Elektronenmikroskop

Die elektronenmikroskopische Autoradiographie erlaubt unter Ausmutzung des hohen Auflösungsvermögens des Elektronenmikroskops eine exakte Lokalisierung radioaktiver Verbindungen in Präparaten. Voraussetzung dafür ist die Herstellung einer Einkornschicht des Silberhalogenids aus einer vorgegebenen Filmemulsion. Diese Einkornschicht mit möglichst gleichmäßiger Silberhalogenidverteilung muß dann auf das radioaktive Objekt aufgebracht werden. Nach einer Übersicht über die Versuchsmethode werden Untersuchungen zur Präparation von Silberhalogenid-Einkornschichten aus den Emulsionen ORWO K 2, K 5, K 6, Ilford L 4 und Gevaert Nuc 7.15 für die elektronenmikroskopische Autoradiographie dargestellt.     

Effect of finite energy of intravalley acoustic phonons on the temperature of non-equilibrium electrons in a quantum surface

The effect of finite energy of intravalley acoustic phonons on the electric field dependence of the temperature of the non-equilibrium carriers in a quantum surface has been studied here. The calculations have been made, for a rather pure material, at low lattice temperature. Numerical results are obtained for GaAs and Si. The results are interesting being significantly different from what one obtains by neglecting the phonon energy.