Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective

Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe₂ and TiTe₂, a Mott-insulating state in monolayer 1T-TaSe₂, and the monolayer specific 2D topological insulator 1T′-WTe₂, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe₂, the 2D topological insulators of 1T′-MoTe₂, and the CDW material 1T-VTe₂. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.     

Ultrafine grain formation and coating mechanism arising from a blast coating process: A transmission electron microscopy analysis

This article examines the substrate/coating interface of a coating deposited onto mild steel and stainless steel substrates using an ambient temperature blast coating technique known as CoBlast. The process uses a coincident stream of an abrasive blast medium and coating medium particles to modify the substrate surface. The hypothesis for the high bond strength is that the abrasive medium roughens the surface while simultaneously disrupting the passivating oxide layer of the substrate, thereby exposing the reactive metal that then reacts with the coating medium. The aim of this study is to provide greater insight into the coating/substrate bonding mechanism by analysing the interface between a hydroxyapatite coating on both mild and stainless steel substrates. The coating adhesion was measured via a tensile test, and bond strengths of approximately 45 MPa were measured. The substrate/coating interface was examined using transmission electron microscopy and selected area diffraction. The analysis of the substrate/coating interface revealed the presence of ultrafine grains in both the coating and substrate at interface associated with deformation at the interface caused by particle impaction during deposition. The chemical reactivity resulting from the creation of these ultrafine grains is proposed to explain the high adhesive strength of CoBlast coatings.     

Corrosion behaviour of mechanically polished AA7075‐T6 aluminium alloy

In the present study, the effects of mechanical polishing on the microstructure and corrosion behaviour of AA7075 aluminium alloy are investigated. It was found that a nano‐grained, near‐surface deformed layer, up to 400 nm thickness, is developed due to significant surface shear stress during mechanically polishing. Within the near‐surface deformed layer, the alloying elements have been redistributed and the microstructure of the alloy is modified; in particular, the normal MgZn₂ particles for T6 are absent. However, segregation bands, approximately 10‐nm thick, containing mainly zinc, are found at the grain boundaries within the near‐surface deformed layer. The presence of such segregation bands promoted localised corrosion along the grain boundaries within the near‐surface deformed layer due to microgalvanic action. During anodic polarisation of mechanically polished alloy in sodium chloride solution, two breakdown potentials were observed at ?750 mV and ?700 mV, respectively. The first breakdown potential is associated with an increased electrochemical activity of the near‐surface deformed layer, and the second breakdown potential is associated with typical pitting of the bulk alloy. Copyright © 2009 John Wiley & Sons, Ltd.     

Atomistic in situ investigation of the morphogenesis of grains during pressure-induced phase transitions: molecular dynamics simulations of the B1-B2 transformation of RbCl

The mechanistic details of the pressure-induced B1-B2 phase transition of rubidium chloride are investigated in a series of transition path sampling molecular dynamics simulations. The B2→B1 transformation proceeds by nucleation and growth involving several, initially separated, nucleation centers. We show how independent and partially correlated nucleation events can function within a global mechanism and explore the evolution of phase domains during the transition. From this, the mechanisms of grain boundary formation are elaborated. The atomic structure of the domain-domain interfaces fully support the concept of Bernal polyhedra. Indeed, the manifold of different grain morphologies obtained from our simulations may be rationalized on the basis of essentially only two different kinds of Bernal polyhedra. The latter also play a crucial role for the B1→B2 transformation and specific grain boundary motifs are identified as preferred nucleation centers for this transition.     

A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon

Degrading the recombination activities of grain boundaries (GBs) is essential to improve the efficiency of multi‐crystalline silicon (mc‐Si) based solar cells. We apply the deep level transient spectroscopy technique to detect interface states at Σ3 and Σ9 GBs in mc‐Si. The density of interface states close to midgap is found comparable for both as‐grown GBs. Gettering or hydrogenation leads to shallower states with a smaller capture cross section and lower density. Recombination activity reduction for Σ3 GBs is stronger than for Σ9 GBs especially after hydrogenation. Both the analysis approach and experimental results could be applied for a specific GB engineering of mc‐Si based solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

纳米晶粒在高压下的相转变

本文报道了晶粒尺寸对压力诱导相转变的最新进展。用热力学理论分析了造成纳米晶体材料 (纳米晶 )的相转变压力与同种大块材料不同的主要因素是体积变化比 ,表面能差和内能差。通过估算这三个因素的具体大小 ,可解释文献报道的实验结果 ,并可确定大块材料和纳米晶之间相转变压力发生差异的控制因素。在纳米晶中 ,晶粒尺寸对结构稳定性和相转变压力的影响与体系本身有关     

Effects of crystalline grain size and packing ratio of self-forming core/shell nanoparticles on magnetic properties at up to GHz bands

Self-forming core/shell nanoparticles of magnetic metal/oxide with crystalline grain size of less than 40 nm were synthesized. The nanoparticles were highly concentrated in an insulating matrix to fabricate a nanocomposite, whose magnetic properties were investigated. The crystalline grain size of the nanoparticles strongly influenced the magnetic anisotropy field, magnetic coercivity, relative permeability, and loss factor (tan δ=μ″/μ′) at high frequency. The packing ratio of the magnetic metallic phase in the nanocomposite also influenced those properties. High permeability with low tan δ of less than 1.5% at up to 1 GHz was obtained in the case of the nanoparticles with crystalline grain size of around 15 nm with large packing ratio of the nanoparticles.     

利用快速热退火法制备多晶硅薄膜

为了制备优质的多晶硅薄膜,该论文研究了非晶硅薄膜的快速热退火(RTA)技术.先利用PECVD设备沉积非晶硅薄膜,然后把其放入快速热退火炉中进行退火.退火前后的薄膜利用X射线衍射(XRD)仪、Raman光谱仪及扫描电子显微镜(SEM)测试其晶体结构及表面形貌,利用电导率测试设备测试其暗电导率.研究表明退火温度、退火时间以及沉积时的衬底温度对非晶硅薄膜的晶化都有很大的影响.     

Significant decrease in interfacial energy of grain boundary through serrated grain boundary transition

The mechanism of serrated grain boundary formation and its effect on liquation behaviour have been studied in a wrought nickel-based superalloy – Alloy 263. It was newly discovered that grain boundaries are considerably serrated in the absence of γ?′-phase or M₂₃C₆ at the grain boundaries. An electron energy-loss spectroscopy study suggests that serration is triggered by the discontinuous segregation of C and Cr atoms at grain boundaries for the purpose of relieving the excessive elastic strain energy. The grain boundaries serrate to have specific segments approaching one {111} low-index plane at a boundary so that the interfacial free energy of the grain boundary can be decreased, which may be responsible for the driving force of the serration. The serrated grain boundaries effectively suppress grain coarsening and are highly resistant to liquation due to their lower wettability resulting from a lower interfacial energy of the grain boundary.     

Interaction of Point Defects with Grain Boundaries in fcc Metals

Structures of several symmetrical tilt grain boundaries (GBs) with different tilt axes in Cu and Al and their interaction with vacancies and interstitials are studied using atomistic computer simulations with embedded-atom potentials. The lowest defect formation energy in a GB is found to correlate with the GB energy in both Cu and Al. Importantly, vacancies and self-interstitials in GBs have comparable formation energies, suggesting that both defects are equally important for GB diffusion and other properties. Vacancies in GBs can be either localized at certain sites or be delocalized over several sites. Some GB sites do not support a stable vacancy at all. Self-interstitial atoms can occupy relatively open interatomic positions, form split dumbbell configurations, or give rise to highly delocalized displacement zones. These structural forms of point defects have been observed across the whole set of twelve GBs in Cu and six GBs in Al studied in this paper as well as in our previous work [Interface Science 11, 131–148 (2003)]. It is suggested that these structural forms are general to all GBs in fcc metals. They can be explained by the existence of internal stresses and alternating tension and compression regions in the GB core.