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51.
52.
InAs/GaSb/AlSb resonant tunneling spin device concepts 总被引:1,自引:0,他引:1
David Z. -Y. Ting Xavier Cartoix 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):350
We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined. 相似文献
53.
The performances of barriers having different shapes and surface conditions were tested using the boundary element method in a well-controlled environment. The heights and widths of the barriers were standardized and the insertion losses for six receiver positions were averaged and compared. Figures displaying the results allow for straightforward barrier performance estimation. It was shown that absorbing and soft edges significantly improve the efficiency of the barrier, but configuration modifications provide only a slight improvement. The soft T-shaped barrier produces the highest performance. A 3 m high T-shaped barrier provides the same performance as a 10 m high plain barrier. The spectral efficiency was also investigated. The insertion loss spectra for the absorbing and the soft barriers exhibit a similar shape, but the rigid barrier differs from these two. 相似文献
54.
This paper considers the estimation problem for a trigonometric regression model with the noise specified by the Ornstein–Uhlenbeck
process with unknown parameter. We propose a sequential procedure which ensures a prescribed mean square precision uniformly
in the nuisance parameter. The asymptotic behaviour of the procedure duration mean has been studied.
This revised version was published online in August 2006 with corrections to the Cover Date. 相似文献
55.
Applying the approximate Fokker-Planck equation we derived, we obtain the analytic expression of thestationary laser intensity distribution Pst(Ⅰ) by studying the single-mode laser cubic model subject to colored cross-correlation additive and multiplicative noise, each of which is colored. Based on it, we discuss the effects on the stationarylaser intensity distribution Pst(Ⅰ) by cross-correlation between noises and “color“ of noises (non-Markovian effect) whenthe laser system is above the threshold. In detail, we analyze two cases: One is that the three correlation-times (i.e.the self-correlation and cross-correlation times of the additive and multiplicative noise) are chosen to be the same value(τ1 = τ2 = τ3 = τ). For this case, the effect of noise cross-correlation is investigated emphatically, and we detect thatonly when λ≠ 0 can the noise-induced transition occur in the Pst(Ⅰ) curve, and only when τ≠ 0 and λ≠ 0, can the“reentrant noise-induced transition“ occur. The other case is that the three correlation times are not the same value,τ1 ≠τ2 ≠τ3. For this case, we find that the noise-induced transition occurring in the Pst (Ⅰ) curve is entirely differentwhen the values of τ1, τ2, and τ3 are changed respectively. In particular, when τ2 (self-correlation time of additivenoise) is changing, the ratio of the two maximums of the Pst(Ⅰ) curve R exhibits an interesting phenomenon, “reentrantnoise-induced transition“, which demonstrates the effect of noise “color“ (non-Markovian effect). 相似文献
56.
《Surface and interface analysis : SIA》2004,36(1):61-70
In spectroscopy, the recorded spectra can often be modelled as the noisy convolution product of an instrumental function with the ‘true’ signal to be estimated. Such models have often been used for high‐resolution electron energy‐loss spectroscopy (HREELS). In this article, a new method is suggested to estimate the ‘true’ HREELS signal, i.e. the original electronic diffusion function with ‘true’ peak intensities. Our method relies upon the use of wavelets that, because they exhibit simultaneous time and frequency localization, are well‐suited for signal analysis. Firstly, a wavelet shrinkage algorithm is used to filter the noise. This is achieved by decomposing the noisy signal into an appropriate wavelet basis and then thresholding the wavelet coefficients that contain noise. This algorithm has a particular threshold related to frequency and time. Secondly, the broadening due to the instrumental response is eliminated through a deconvolution process. This step mainly rests on the existing relation between the Lipschitz regularity of the signal and the decay with scale of its wavelet coefficients and on least squares. The efficiency of this technique is highlighted by comparing the results obtained with those provided by other published methods. This work is the second in a series of three papers in this issue. The first one presents background knowledge on the wavelets required to understand the estimation methods. The third paper explores the application of wavelet filtering and deconvolution techniques to x‐ray photoelectron spectroscopy. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
57.
The noise of hybrid soliton pulse source (HSPS) with linearly chirped Gaussian apodized fiber Bragg grating is analyzed by couple-mode equations including spontaneous emission noise when the HSPS is mode-locked. Relative intensity noise is calculated using numerical solutions of these equations. It is shown that transform limited pulses are generated over a wide tuning range around the fundamental mode-locking frequency with low spontaneous noise. However, a high noise level affects the operation of device, and therefore transform-limited pulses are not obtainable over a wide tuning range. It is also shown that noise is extremely sensitive to the RF and DC currents, linewidth enhancement factor, gain saturation parameter and spontaneous coupling factor. 相似文献
58.
59.
调制不稳定性对级联放大光纤传输系统信噪比的影响 总被引:1,自引:0,他引:1
在考虑光纤损耗和级联放大器的情况下,推导了调制不稳定性的产生条件和增益的普适解析表达式,分析了调制不稳定性对信噪比的影响,给出了一个新的计算信噪比的表达式。 相似文献
60.
In this paper we report some of the important results of experimental investigations of the flicker noise near the metal-insulator
(MI) transition in doped silicon single crystals. This is the first comprehensive work to study low-frequency noise in heavily
doped Si over an extensive temperature range (2 K<T<500 K). The measurements of conductance fluctuations (flicker noise) were carried out in the frequency range 10−2<f<4 × 101 Hz in single crystalline Si across the MI transition by doping with phosphorous and boron. The magnitude of noise in heavily
doped Si is much larger than that seen in lightly doped Si over the whole temperature range. The extensive temperature range
covered allowed us to detect two distinct noise mechanisms. At low temperatures (T<100 K) universal conductance fluctuations (UCF) dominate and the spectral dependence of the noise is determined by dephasing
the electron from defects with two-levels (TLS). At higher temperatures (T>200 K) the noise arises from activated defect dynamics. As the MI transition is approached, the 1/f spectral power, typical of the metallic regime, gets modified by the presence of discrete Lorentzians which arise from generation-recombination
process which is the characteristic of a semiconductor. 相似文献