光子晶体偏振分光镜的优化设计

提出了一种二维光子晶体偏振分光镜的设计方法,介绍了光栅基板上用Ge/BaF₂ 多层膜实现二维光子晶体偏振分光镜的优化设计.结果表明，TE模式的光子禁带宽度为0083(2πc/a, a是光栅的周期),设计的偏振波长从172μm到24μm，相对带宽为331％.此光子晶体偏振器件制作简单,具有实用性. 关键词： 偏振分光镜 光子晶体 光子禁带     

Functional Interdependence in Coupled Dissipative Structures: Physical Foundations of Biological Coordination

Coordination within and between organisms is one of the most complex abilities of living systems, requiring the concerted regulation of many physiological constituents, and this complexity can be particularly difficult to explain by appealing to physics. A valuable framework for understanding biological coordination is the coordinative structure, a self-organized assembly of physiological elements that collectively performs a specific function. Coordinative structures are characterized by three properties: (1) multiple coupled components, (2) soft-assembly, and (3) functional organization. Coordinative structures have been hypothesized to be specific instantiations of dissipative structures, non-equilibrium, self-organized, physical systems exhibiting complex pattern formation in structure and behaviors. We pursued this hypothesis by testing for these three properties of coordinative structures in an electrically-driven dissipative structure. Our system demonstrates dynamic reorganization in response to functional perturbation, a behavior of coordinative structures called reciprocal compensation. Reciprocal compensation is corroborated by a dynamical systems model of the underlying physics. This coordinated activity of the system appears to derive from the system’s intrinsic end-directed behavior to maximize the rate of entropy production. The paper includes three primary components: (1) empirical data on emergent coordinated phenomena in a physical system, (2) computational simulations of this physical system, and (3) theoretical evaluation of the empirical and simulated results in the context of physics and the life sciences. This study reveals similarities between an electrically-driven dissipative structure that exhibits end-directed behavior and the goal-oriented behaviors of more complex living systems.     

Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer

A very long lifetime exciton emission with non-single exponential decay characteristics has been reported for single InA-s/GaAs quantum dot(QD) samples,in which there exists a long-lived metastable state in the wetting layer(WL)through radiative field coupling between the exciton emissions in the WL and the dipole field of metal islands.In this article we have proposed a new three-level model to simulate the exciton emission decay curve.In this model,assuming that the excitons in a metastable state will diffuse and be trapped by QDs,and then emit fluorescence in QDs,a stretchedlike exponential decay formula is derived as I(t)=At~(β-1)e~(-(rt)β),which can describe well the long lifetime decay curve with an analytical expression of average lifetime     

Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

The determination of band offsets is crucial in the optimization of Ga₂O₃-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga₂O₃/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔE_C) of 1.66 eV and a valence band offset (ΔE_V) of -2.41 eV. Furthermore, the electronic properties of the Ga₂O₃/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga₂O₃.     

Mechanism of defect evolution in H+ and He+ implanted InP

The defect evolution in InP with the 75 keV H⁺ and 115 keV He⁺ implantation at room temperature after subsequent annealing has been investigated in detail. With the same ion implantation fluence, the He⁺ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H⁺ implanted InP. After annealing, the H⁺ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H₂ molecules were stored in the heterogeneously oriented platelet defects. However, the He molecules were stored into the large bubbles which relaxed toward the free surface, creating blisters at the high fluence.     

铝-锂合金动态扭转实验研究

利用霍普金森扭杆（Torsional Split-Hopkinson Bar）技术对三种不同成份或状态的铝-锂合金材料的动态应力-应变-应变率关系进行了实验测定。应变率范围由1300s-1到2600s-1,研究表明随着应变率的提高,三种不同成份或状态的铝-锂合金材料的韧性和强度都有不同程度的提高。对剪切带的初步观察发现,随应变率的增加,剪切带有变窄的趋势。     

Propagation of magnetoelastic shear waves across layers in a periodically layered medium

The paper is concerned with magnetoelastic shear waves propagating in regularly layered magnetostrictive media at a right angle to the layer interfaces __________ Translated from Prikladnaya Mekhanika, Vol. 42, No. 6, pp. 54–60, June 2006.     

聚芴类半导体光谱稳定性

有机半导体的物理和化学性质直接影响其光电器件的性能, 这为物理化学提出了新的研究内容与挑战. 其中, 聚芴类蓝光二极管的光谱稳定性及低能发射带(LEEB)的起源问题是国际上近十年的热点问题之一. 本文系统概述了低能发射带的现象、表征方法以及可能的形成机理, 包括链间作用导致的激基缔合物发射、器件制备或降解过程形成的芴酮缺陷发射、芴酮聚集态发射以及聚芴端羟基界面氧化导致的绿光发射. 本文综述各种物理掺杂和界面调控改善聚芴类二极管蓝光稳定性的策略, 着重论述非平面基团的空间位阻、分子构象与链的拓扑结构以及引入抗氧化受阻胺光稳定剂来提高其光谱稳定性策略.     

射频磁控溅射法制备N掺杂β-Ga2O3薄膜的光学特性

在不同氨分压比(0～30％)下,用射频磁控溅射法在玻璃和硅衬底上制备了N掺杂β-Ga2O3薄膜.研究了氨分压比和退火对薄膜光学和结构特性的影响.N掺杂β-Ga2O3薄膜的微结构、光学透过率、光学吸收和光学带隙随着氨分压比的增加发生了显著变化.观察到了绿光、蓝光和紫外发光带,并对每个发光带进行了讨论.