Spin-spin coupling edition in chiral liquid crystal NMR solvent

The application of the G-SERFph pulse sequence is presented on enantiomeric mixtures dissolved in a chiral liquid crystal. It aims at editing, within one single 2D spectrum, every proton coupling which is experienced by a given proton site in the molecule, and leads to real phased T-edited spectroscopy (T=J+2D). This NMR experiment is based on the combination of homonuclear semi-selective refocusing techniques with a spatial frequency encoding of the sample. This approach, which consists in handling selectively each coupling in separate cross sections of the sample, is applied to the visualization of enantiomers dissolved in a chiral liquid crystalline phase. Advantages and limits of this methodology are widely discussed.     

Analysis of two stacked cylindrical dielectric resonators in a TE₁₀₂ microwave cavity for magnetic resonance spectroscopy

The frequency, field distributions and filling factors of a DR/TE??? probe, consisting of two cylindrical dielectric resonators (DR1 and DR2) in a rectangular TE??? cavity, are simulated and analyzed by finite element methods. The TE(+++) mode formed by the in-phase coupling of the TE??(δ)(DR1), TE??(δ)(DR2) and TE??? basic modes, is the most appropriate mode for X-band EPR experiments. The corresponding simulated B(+++) fields of the TE(+++) mode have significant amplitudes at DR1, DR2 and the cavity's iris resulting in efficient coupling between the DR/TE??? probe and the microwave bridge. At the experimental configuration, B(+++) in the vicinity of DR2 is much larger than that around DR1 indicating that DR1 mainly acts as a frequency tuner. In contrast to a simple microwave shield, the resonant cavity is an essential component of the probe that affects its frequency. The two dielectric resonators are always coupled and this is enhanced by the cavity. When DR1 and DR2 are close to the cavity walls, the TE(+++) frequency and B(+++) distribution are very similar to that of the empty TE??? cavity. When all the experimental details are taken into account, the agreement between the experimental and simulated TE(+++) frequencies is excellent. This confirms that the resonating mode of the spectrometer's DR/TE??? probe is the TE(+++) mode. Additional proof is obtained from B?(x), which is the calculated maximum x component of B(+++). It is predominantly due to DR2 and is approximately 4.4 G. The B?(x) maximum value of the DR/TE??? probe is found to be slightly larger than that for a single resonator in a cavity because DR1 further concentrates the cavity's magnetic field along its x axis. Even though DR1 slightly enhances the performance of the DR/TE??? probe its main benefit is to act as a frequency tuner. A waveguide iris can be used to over-couple the DR/TE??? probe and lower its Q to ≈150. Under these conditions, the probe has a short dead time and a large bandwidth. The DR/TE??? probe's calculated conversion factor is approximately three times that of a regular cavity making it a good candidate for pulsed EPR experiments.     

Recollections about our 1996 JMR paper on diffusion anisotropy

We provide scientific background information and personal accounts relating to our publication of “Microstructural and Physiological Features of Tissues Elucidated by Quantitative-Diffusion-Tensor MRI” in the Journal of Magnetic Resonance B. This paper provided a framework for measuring and mapping intrinsic features of diffusion anisotropy obtained from diffusion tensor MRI (DTI) data.     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

Investigation of morphology selection for CBr_4-C_2Cl_6 alloy in three dimensions with multi-phase field method

With the multi-phase field model, the unidirectional solidification with constant velocity growth and variable velocity growth of the CBr4-C2Cl6 eutectic alloy is simulated in three dimensions. The simulated results with constant velocity growth show that with the increase of pulling velocity, the morphology of the CBr4-C2Cl6 alloy evolves in the sequence of lamellar merging →lamellar-rod transition→stable lamellar growth→oscillating growth→lamellar branching. A morphology selection map is established with ...     

基于小波域扩散滤波的弱小目标检测

分析了基于小波变换进行弱小目标检测的基本思想,利用小波变换的多尺度多分辨率特性,结合小波变换系数的方向特性和扩散滤波扩散方向的可选择性,提出了基于小波域扩散滤波的弱小目标检测算法。采用该算法对不同尺度、不同方向的小波系数分别进行扩散滤波,取得了较好的效果。仿真试验结果表明：该算法能在Gaussian噪声背景和不均匀背景下实现对对比度为2%的微弱目标的检测。     

基于倏逝场微小粒子驱动技术研究进展

处于倏逝场中的微小粒子会受到辐射压力的作用而朝着倏逝场的传播方向运动,基于此原理的微小粒子驱动技术可用于介质颗粒、胶体颗粒、生物细胞等微小粒子的捕获和驱动.由于倏逝场光学微操作系统不会受到物镜焦深和激光光斑尺寸的限制,因此它比自由空间系统的优越性更强,而波导形成的光学力可以应用于长距离驱动,其仅仅受限于系统的散射和吸收...     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Simultaneous low extinction and high local field enhancement in Ag nanocubes

We theoretically investigate surface plasmon resonance properties in Au and Ag cubic nanoparticles and find a novel plasmonic mode that exhibits simultaneous low extinction and high local field enhancement properties. We analyse this mode from different aspects by looking at the distribution patterns of local field intensity, energy flux, absorption and charge density. We find that in the mode the polarized charge is highly densified in a very limited volume around the corner of the nanocube and results in very strong local field enhancement. Perturbations of the incident energy flux and light absorption are also strongly localized in this small volume of the corner region, leading to both low absorption and low scattering cross section. As a result, the extinction is low for the mode. Metal nanoparticles involving such peculiar modes may be useful for constructing nonlinear compound materials with low linear absorption and high nonlinearity.     

Simultaneous effects of hydrostatic pressure and electric field on impurity binding energy and polarizability in coupled InAs/GaAs quantum wires

This work is concerned with the theoretical study of the combined effects of applied electric field and hydrostatic pressure on the binding energy and impurity polarizability of a donor impurity in laterally coupled double InAs/GaAs quantum-well wires. Calculations have been made in the effective mass and parabolic band approximations and using a variational method. The results are reported for different configurations of wire and barriers widths, impurity position, and electric field and hydrostatic pressure strengths. Our results show that for symmetrical structures the binding energy is an even function of the impurity position along the growth direction of the structure. Also, we found that for hydrostatic pressure strength up to 38 kbar, the binding energy increases linearly with hydrostatic pressure, while for larger values of hydrostatic pressure the binding energy has a non-linear behavior. Finally, we found that the hydrostatic pressure can increase the coupling between the two parallel quantum-well wires.