微通道中气体流动的格子Boltzmann数值模拟

采用可压缩格子Boltzmann模型及非平衡外推边界条件,数值模拟微通道中的气体在滑移区域(Kn≤0.1)内的流动,计算结果包括出口速度剖面、通道中心压力分布以及质量流率等,与理论结果及其他实验结果符合得很好.还模拟了180°弯曲通道中的气体流动.结果表明,滑移速度的存在抑制了边界层的分离,因此在弯曲处不存在漩涡.计算结果还表明,弯道的存在显著影响了气体的质量流率.     

Ballistic electron transport in wrinkled superlattices

Inspired by the problem of elastic wave scattering on wrinkled interfaces, we studied the scattering of ballistic electrons on a wrinkled potential energy region. The electron transmission coefficient depends on both wrinkle amplitude and periodicity, having different behaviors for positive and negative scattering potential energies. For scattering on potential barriers, minibands appear in the electron transmission, as in superlattices, whereas for scattering on periodic potential wells the transmission coefficient has a more complex form. Besides suggesting that tuning of electron transmission is possible by modifying the scattering potential via voltages on wrinkled gate electrodes, our results emphasize the analogies between ballistic electrons and elastic waves even in scattering problems on non-typical configurations.     

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.     

Gain-assisted indented plasmonic waveguide for low-threshold nanolaser applications

A subwavelength plasmonic indented waveguide with an active InGaAsP core is proposed.The characteristics of the gap plasmon mode and gain required for lossless propagation are investigated and analyzed by the finite element method.We numerically calculate the normalized mode areas and percentages of energy confined in InGaAsP and metal for plasmonic nanolaser applications.It is shown that the indentation of the sidewalls has an optimal value for which the lasing threshold gain is minimal.The structure could enable low-threshold subwavelength lasing and applications for optoelectronic integrated circuits.     

Polarization modification of PZT thin films by means of electric fields and stress in scanning force microscopy

Polarization switching in scanning force microscopy (SFM) is influenced by both electric fields and stress, whereby the latter can arise inherently from Maxwell stress. We discuss the influence of electric charges and of the polarization asymmetry on the switching behaviour. For single crystallites of PZT(53/47) thin films, the sectors for ferroelectric, ferroelastoelectric and ferroelastic switching are represented in a field-stress map. The influence of stress on the second harmonic of the SFM is also discussed.     

Temperature dependence of the Ho L2‐edge XMCD spectra of Ho6Fe23

An X‐ray magnetic circular dichroism (XMCD) study performed at the Ho L_2,3‐edges in Ho₆Fe₂₃ as a function of temperature is presented. It is demonstrated that the anomalous temperature dependence of the Ho L₂‐edge XMCD signal is due to the magnetic contribution of Fe atoms. By contrast, the Ho L₃‐edge XMCD directly reflects the temperature dependence of the Ho magnetic moment. By combining the XMCD at both Ho L₂‐ and L₃‐edges, the possibility of determining the temperature dependence of the Fe magnetic moment is demonstrated. Then, both μ_Ho(T) and μ_Fe(T) have been determined by tuning only the absorption L‐edges of Ho. This result opens new possibilities of applying XMCD at these absorption edges to obtain quantitative element‐specific magnetic information that is not directly obtained by other experimental tools.     

频率自适应最优权重阵列干涉条纹处理技术

考虑长基线水平阵列波束形成对声场模态呈现的滤波特征,建立了一种随频率改变滤波通带的阵列权矢量设计方法。基于简正波理论,结合声场波束形成特点,在分析了常规波束形成信号LOFAR谱图干涉条纹的清晰度和条纹结构不同于单水听器输出信号条纹现象基础上,采用线性等式约束的二次优化模型,给出了一种频率自适应的最优权重估计。数值仿真验证和试验数据分析表明,利用该方法设计的最优权重阵列波束处理,可以滤波出SRBR(Surface-Reflected Bottom-Reflected)或N-SRBR(Non-Surface-Reflected Bottom-Reflected)模态组成的波束形成信号,信号谱图干涉条纹斜率与理论分析基本一致。     

抽运光与信号光的光强重叠因子和掺铒玻璃波导放大器的增益特性

在掺铒玻璃波导放大器（EDWA）的三能级速率-传输方程中,考虑两次离子交换工艺中波导掩模窗口宽度w不同所导致的抽运光、信号光模场与光强分布的不同,讨论不同w对EDWA增益特性的影响,得到光强分布的数值解.引入描述波导中抽运光和信号光的归一化光强重叠因子,对EDWA的传统近似解提出修正,得到了修正解,使其更加接近光强分布的数值解.模拟结果表明,在条波导长度为4 cm、抽运光波长为980 nm、功率为80 mW、信号光波长为1534 nm、功率为-10 dBm条件下,不同w所导致EDWA的增益差别可达297 dB.修正解的结果比传统近似解更加接近光强分布的数值解.修正解对于EDWA的理论研究、器件设计具有指导作用. 关键词： 集成光学 掺铒玻璃波导放大器 重叠积分因子 增益     

Investigation of the limit of lateral beam shifts on a symmetrical metal-cladding waveguide

This paper reports that Goos--H\"anchen (GH) shifts occurring on a symmetrical metal-cladding waveguide are experimentally identified. It was found that there exists a critical thickness of the upper metal layer, h_cr, above which negative shift is observed and, reversely, positive shift occurs. Both positive and negative GH shifts near the critical thickness do not vary dramatically and can achieve a maximum on the submillimeter scale, which is different from simulated results using the stationary-phase method. It also shows that this critical thickness, h_cr, can be obtained at the position for zero reflectivity by setting the intrinsic damping to be the same as the radiative damping. The GH effects observed near the critical thickness are produced by extreme distortion of the reflected beam profiles, which limits the amplitude of the GH shift and, further, the sensitivity of the GH optical sensor based on the symmetrical metal-cladding waveguide.     

ZnO压敏陶瓷介电损耗的温度谱研究

利用Novocontrol宽频介电谱仪在-100—20 ℃温度范围内测量了ZnO-Bi₂O₃系压敏陶瓷的介电频谱,其频率范围为10^-2—10⁶ Hz. 研究表明： ZnO压敏陶瓷特征损耗峰的活化能分别为0.26和0.36 eV,结合实验条件、理论计算结果及其他现象的分析排除了特征损耗峰源于阴极电子注入、夹层极化和偶极子转向极化的可能.热刺激电流（TSC）谱共出现三个峰,其中高温峰对应于TSC实验加压过程引入的热离子极化,而中温峰和低温峰对应于介电损耗峰. 在分析的基础上,提出了ZnO压敏陶瓷的特征损耗峰起源于耗尽层内本征缺陷的电子弛豫过程. 关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热刺激电流