仿复眼的动目标位置快速估计算法

昆虫复眼由成百上千个小眼组成,具有大视范围内的快速识别能力.本文仿昆虫复眼的快速定位特性,提出一种基于小眼视场交汇空间分区的动目标位置快速估计法.根据探测器阵列组合与空间视野范围的对应关系建立参量方程,参量为检测到动目标时探测器阵列的组合方式;模拟探测器阵列与运动目标,验证定位算法的快速估计能力;最后通过阈值比较获得检测到目标的探测器组合方式,求解参量方程实现目标定位.对定位计算结果与实际模拟距离进行比较,结果表明该算法能够实现不同大小目标在不同运动轨迹下的位置估计.     

新型双通道Mach-Zehnder干涉仪多普勒测风激光雷达鉴频系统研究及仿真

Mach-Zehnder(M-Z)干涉仪可作为鉴频器件应用于多普勒测风激光雷达系统中.鉴于一般M-Z干涉仪的稳定性差,不易于调节的缺点,提出一种基于双棱镜结构的新型双通道M-Z干涉仪作为多普勒测风激光雷达鉴频器件.在进行探测原理分析的基础上,利用光学设计软件对其鉴频系统结构进行了参量优化设计和系统仿真.通过设定实验参量并进行光线追迹模拟仿真实验结果,应用反演理论获得了风速值.利用多普勒频移公式计算获得理论风速并与仿真结果进行了对比,结果表明反演仿真风速与理论风速值基本吻合,标准差为0.46m/s.此新型双通道M-Z干涉仪可以作为鉴频器件应用于多普勒测风激光雷达系统中,在光路的调节及提高系统稳定性上具有优势.     

A new digital readout integrated circuit (DROIC) with pixel parallel A/D conversion and reduced quantization noise

This paper represents a novel digital readout for infrared focal plane arrays with 2.33 Ge⁻ charge handling capacity while achieving quantization noise of 161 e⁻. Pixel level A/D conversion has been realized by pulse frequency modulation (PFM) technique supported with a novel method utilizing extended integration that eliminates the requirement for an additional column ADC. Digital pixel operates with two phases; the first phase is as ordinary PFM in charge domain and the second phase is in time domain, allowing the fine quantization and low quantization noise. A 32 × 32 prototype has been manufactured and tested. Measured peak SNR at half well fill is 71 dB with significant SNR improvement for low illuminated pixels due to extremely low quantization noise. 32 × 32 ROIC dissipates only 1.1 mW and the figure of merit for power dissipation is measured to be 465 fJ/LSB, compared to 930 fJ/LSB and 1470 fJ/LSB of the state of the art.     

Non-uniformity correction of infrared focal plane array in point target surveillance systems

We discuss the influence of non-uniformity and non-uniformity correction on point target detection in infrared surveillance system, and propose a non-uniformity correction approach which is based on signal intensity and sensor characteristics. Theoretical models are used to derive the combined effect of background clutter, sensor random noise, target, non-uniformity and correction error on the signal-to-noise-and-clutter ratio. From our analysis, it can be noted that background clutter intensity is successively modulated by sensor non-uniformity and non-uniformity correction, while sensor random noise is modulated by the non-uniformity correction process only. Furthermore, background clutter and sensor random noise are the key factors that affect the performance of a surveillance system, when it is used to detect point targets. The method presented in this paper takes all of the above into account, moreover, it considers the difference between scanning and staring focal plane array. The experimental results demonstrate the effectiveness of the proposed method.     

Hybrid device for acoustic noise reduction and energy harvesting based on a silicon micro-perforated panel structure

A kind of hybrid device for acoustic noise reduction and vibration energy harvesting based on the silicon micro- perforated panel （MPP） resonant structure is investigated in the article. The critical parts of the device include MPP and energy harvesting membranes. They are all fabricated by means of silicon micro-electro-mechanical systems （MEMS） tech- nology. The silicon MPP has dense and accurate micro-holes. This noise reduction structure has the advantages of wide band and higher absorption coefficients. The vibration energy harvesting part is formed by square piezoelectric membranes arranged in rows. ZnO material is used as it has a good compatibility with the fabrication process. The MPP, piezo- electric membranes, and metal bracket are assembled into a hybrid device with multifunctions. The device exhibits good performances of acoustic noise absorption and acoustic-electric conversion. Its maximum open circuit voltage achieves 69.41 mV.     

A voltage-controlled chaotic oscillator based on carbon nanotube field-effect transistor for low-power embedded systems

This paper presents a compact and low-power-based discrete-time chaotic oscillator based on a carbon nanotube field-effect transistor implemented using Wong and Deng＇s well-known model. The chaotic circuit is composed of a nonlinear circuit that creates an adjustable chaos map, two sample and hold cells for capture and delay functions, and a voltage shifter that works as a buffer and adjusts the output voltage for feedback. The operation of the chaotic circuit is verified with the SPICE software package, which uses a supply voltage of 0.9 V at a frequency of 20 kHz. The time series, frequency spectra, transitions in phase space, sensitivity with the initial condition diagrams, and bifurcation phenomena are presented. The main advantage of this circuit is that its chaotic signal can be generated while dissipating approximately 7.8 μW of power, making it suitable for embedded systems where many chaos-signal generators are required on a single chip.     

Stochastic resonance in an over-damped linear oscillator

For an over-damped linear system subjected to both parametric excitation of colored noise and external excitation of periodically modulated noise, and in the case that the cross-correlation intensity between noises is a time-periodic function,we study the stochastic resonance(SR) in this paper. Using the Shapiro–Loginov formula, we acquire the exact expressions of the first-order and the second-order moments. By the stochastic averaging method, we obtain the analytical expression of the output signal-to-noise ratio(SNR). Meanwhile, we discuss the evolutions of the SNR with the signal frequency, noise intensity, correlation rate of noise, time period, and modulation frequency. We find a new bona fide SR. The evolution of the SNR with the signal frequency presents periodic oscillation, which is not observed in a conventional linear system. We obtain the conventional SR of the SNR with the noise intensity and the correlation rate of noise. We also obtain the SR in a wide sense, in which the evolution of the SNR with time period modulation frequency presents periodic oscillation. We find that the time-periodic modulation of the cross-correlation intensity between noises diversifies the stochastic resonance phenomena and makes this system possess richer dynamic behaviors.     

Superconducting quantum interference devices with different damped junctions operated in directly coupled current- and voltage-bias modes

We investigate niobium thin film superconducting quantum interference devices （SQUIDs） with different Steward- McCumber parameters βc operated in both current- and voltage-bias modes. We experimentally prove that there is no difference between the two bias modes with respect to the SQUID intrinsic noise and the noise contribution from the preamplifier. Furthermore, the relationships of the SQUID dynamic parameters, （Rd）current bias ≈ （Rd）voltage bias and （σV/σФ）current bias ≈ [σi/σФ）Rd]voltage bias, are always satisfied. For a strongly damped SQUID withβc ≈ 0.25, addi- tional positive feedback （APF） and noise cancellation （NC） were employed to enhance σV/σФ, the former showing a degradation in the linear flux range but otherwise the same with NC. For a weakly damped SQUID with βc ≈ 3, it is di- rectly connected to the preamplifier without APF or NC, and a low SQUID system noise of about 4μФ0/x/Hz is measured, which is close to its intrinsic noise.     

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors

By making use of the quasi-two-dimensional （quasi-2D） model, the current-voltage （l-V） characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors （HFETs） with different gate lengths are simulated based on the measured capacitance-voltage （C-V） characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas （2DEG） with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher.