非对称结构大功率940 nm量子阱激光器

为改善940 nm大功率InGaAs/GaAs半导体激光器输出特性,通过模拟计算了非对称波导层及限制层结构的光场分布,并参照模拟制作了非对称结构半导体激光器器件。采用低压金属有机物气相沉积（LP-MOCVD）生长技术,获得了低内吸收系数的高质量外延材料,通过实验数据计算得到激光器材料内吸收系数仅为0.44 mm-1。进而通过管芯工艺制作了条宽100 m、腔长2000 m的940 nm半导体激光器器件。25 ℃室温10 A直流连续（CW）测试镀膜后器件阈值电流251 mA,斜率效率1.22 W/A,最大输出功率达到9.6 W,最大光电转化效率超过70%。     

外场下压力及屏蔽对无限深量子阱中施主结合能的影响

考虑外加磁场、压力及屏蔽效应,利用变分方法数值计算GaN/AlxGa1-xN无限深量子阱系统中的杂质态结合能。给出结合能随磁场和阱宽的变化关系,同时讨论了有无屏蔽时的区别。结果表明:在磁场和压力作用下,结合能随阱宽的增大而减小;阱宽和压力一定时,结合能随磁场的增大而增大。屏蔽效应使得有效库仑吸引作用减弱而导致杂质态结合能显著下降。屏蔽效应对结合能的影响随压力增大而增强,随磁场强度增大而减弱。     

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

Ga1-xInxNyAs1-y/GaAs量子阱中电子-LO声子的散射率

在有效质量近似下利用打靶法求出Ga_1-xIn_xN_yAs_1-y/GaAs量子阱中的本征能级E_n, 并通过费米黄金规则计算电子-LO声子由第一激发态到基态的散射率和平均散射率随温度、阱宽以及氮(N)和铟(In)组分变化的规律. 计算结果表明: 在In 组分恒定的情况下, 随着N组分的增加, 散射率和平均散射率增加; 在N组分恒定的情况下, 随着In组分的增加, 散射率和平均散射率减小; 随着温度的增加, 在温度较低时散射率和平均散射率随温度的增加变化不大, 在温度较高时随温度的增加而增加; 随着阱宽的增加, 散射率和平均散射率都是先增加到一个最大值, 然后再减小, 最大值出现在阱宽200 Å附近. 计算结果对Ga_1-xIn_xN_yAs_1-y/GaAs量子阱在光电子器件应用方面有一定的指导意义. 关键词： 费米黄金规则 1-xIn_xN_yAs_1-y/GaAs量子阱')" href="#">Ga_1-xIn_xN_yAs_1-y/GaAs量子阱 LO声子 散射率     

Dynamic control of photonic bandgap mediated by vacuum-induced coherence

We theoretically examine the storage and retrieval of a light pulse in a medium comprised of four-level atoms of the V − Λ-type. The two intermediate levels are probed by a weak field and vacuum-induced coherence effects lead the system to transparency. The temporal variation of the intermediate levels' splitting is used as an external parameter which allows the transfer of the impinging field to a combination of spin coherences. An auxiliary and far-detuned control field in a standing-wave configuration is used to induce a variable photonic bandgap by cross-phase modulation. It is shown that dynamic control of such a bandgap can be used to coherently manipulate the previously stored probe pulse. We use a general scheme to take into account multiwave mixing effects and solve the combined Maxwell-Bloch equations for the relevant coherences. It is shown that the system acts as an all-optical router.     

基于量子阱结构的混合型白光有机发光器件

以荧光材料BePP2结合量子阱作为蓝光发射层,磷光材料GIrl和R-4B掺入到混合双极性主体材料CBP∶Bphen中分别作为绿、红发光层并且在红绿发光层中引入间隔层TPBI,组合得到发白光的混合型有机发光器件。其中量子阱是以BePP2作为势阱、TCTA为势垒。结果表明:当势垒层数为2时,器件的最大发光亮度和电流效率分别为21 682.5 cd/m2和23.73 cd/A;当电压从7 V增加到14 V时,色坐标从(0.345,0.350)变化到(0.340,0.342)。与无量子阱结构的参考器件相比,势垒层数为2的器件的最大功率效率为8.07 lm/W,色坐标变化相对最小为±(0.005,0.008),还有一个高的显色指数83。     

考虑基岩向井筒供气的气藏压裂水平井产能预测模型

基于等效井径模型,综合考虑各裂缝不同参数、裂缝变质量入流和井筒变质量流动等因素的影响,建立并求解了基岩和压裂缝同时向井筒供气的井筒与气藏耦合的压裂水平井产能预测模型.研究分析了压裂水平井产能敏感因素.结果表明:压裂水平井的产能随裂缝条数、裂缝半长、裂缝间距的增加而增加;为获得较高的产能,压裂时应尽可能保持裂缝与井筒垂直;压裂缝条数一定时,裂缝越长、间距越大,压裂缝产能贡献越大,而裂缝越短、间距越小时,基岩向井筒供气的贡献越大,压裂缝贡献相对较小.研究成果为气藏压裂水平井设计提供了科学依据.     

Study of period number effect in the superlattice infrared photodetector

Superlattices have been demonstrated previously by our group in the design of the multicolor infrared photodetector. In general, the period number of the superlattice may be up to several dozens. In this paper, we have investigated the performance of the infrared photodetectors especially with 3, 5 and 15 periods. The detector structure contains a thick blocking barrier embedded between two superlattices with different period numbers but with the same well and barrier widths. This double-superlattice structure shows switchable spectral responses between two spectral regions by the voltage polarities. The photoresponse in each spectral region is also tunable by the magnitude of the applied voltage. The voltage-dependent behavior reveals the photoelectron relaxation and transport mechanism in the superlattice miniband. Superlattice with few periods has high electron group velocity, less relaxation effect and less collection efficiency. Therefore the superlattice with few periods may have better responsivity and narrower photoresponse range than the one with many periods. Based on the experimental results of our devices, it is observed that the superlattice with fewer periods has better detectivity, responsivity, wider range of the operational temperature, and more flexible miniband engineering than the conventional multiple quantum well infrared photodetector.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

对比式离心现象实验装置

为了弥补现行教科书中,离心运动的演示实验装置及离心现象产生实质的知识呈现不足,设计了符合学生认知规律的离心实验装置.该装置通过对比2个物体在相同的角速度下产生相反的运动状态,说明物体做离心运动,不是由角速度产生,而是只有合外为突然消失或是合外力不足以提供向心力时,才能产生离心运动.