半导体带间级联激光器研究进展

半导体带间级联量子阱是实现3~5μm波段中红外激光器的重要前沿,其在半导体光电器件技术、气体检测、医学医疗以及自由空间光通信等诸多领域具有重要科学意义和应用价值。半导体带间级联量子阱发光机理是以二类量子阱中的电子与空穴的带间辐射复合发光为主导,再通过电子注入区与空穴注入区形成级联放大,实现多个量子阱周期内电子与空穴的重复利用。本文综述了半导体带间级联激光器从提出能带结构、外延材料到器件制备技术的发展历程,剖析了器件结构各功能区基本概念和工作原理,介绍了器件结构设计与制备工艺技术难点的里程碑突破,详细解释了载流子再平衡、分别限制层等设计,最后展望了半导体带间级联激光器的发展方向和趋势。     

Effects of an anisotropic parabolic potential and Coulomb’s impurity potential on the energy characteristics of asymmetrical semi-exponential CsI quantum wells

Because of its unique optoelectronic properties,people have studied the characteristics of polarons in various quantum well(QW)models.Among them,the asymmetrical semiexponential QW(ASEQW)is a new model for studying the structure of QWs in recent years.It is of great significance to study the influences of the impurity and anisotropic parabolic confinement potential(APCP)on the crystal’s properties,because some of the impurities,usually regarded as Coulomb’s impurity potential(CIP),will exist in the crystal more or less,and the APCP has flexible adjustment parameters.However,the energy characteristics of the ASEQW under the combined actions of impurities and APCP have not been studied,which is the motivation of this paper.Using the linear combination operation and Lee-Low-Pines unitary transformation methods,we investigate the vibrational frequency and the ground state energy of the strong coupling polaron in an ASEQW with the influences of the CIP at the origin of coordinates and APCP,and make a comparison between our results and previous literature’s.Our numerical results about the energy properties in the ASEQW influenced by the CIP and APCP may have important significances for experimental design and device preparation.     

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

Kinetics of dark excitons and excitonic trions in InGaAs single quantum well

Magnetooptical studies performed on a wide InGaAs/GaAs single quantum well indicate that optically non-active (dark) excitons with total angular momentum play the role of a reservoir for the creation of free multiparticle excitonic complexes. After analyzing the magnetic field evolution of the circularly polarized components of the low energy structure appearing in the main excitonic luminescence line we assign this feature to the excitonic trion formation. The binding energy of the excitonic trions was estimated to be of the order of 1 meV. Received: 29 October 1997 / Received in final form: 20 February 1998 / Accepted: 21 February 1998     

二维铁电材料α-In2Se3 表面分子束外延生长Pb 纳米岛的STM 研究

铁电材料拥有自发电极化, 不同的极化方向会对异质结的电子结构产生可逆的和非易失性的影响. 本工作采用分子束外延技术在二维铁电材料α-In2Se3 衬底上成功制备了 Pb 纳米岛构建 Pb/α-In2Se3 超导铁电异质结,并通过扫描隧道显微镜表征了其表面原子结构与电子结构. 进一步的扫描隧道谱测量显示不同层厚 Pb 岛的量子阱态消失, 并且我们在4.5 K 的温度下没有观察到超导能隙, 表明铁电衬底会影响 Pb 岛的电子结构, 甚至其超导特性. 这些发现为理解铁电衬底对超导性的影响提供了参考, 并为调控低维量子材料中的电子结构及超导性提供了新的思路.     

Electronic properties and interfacial coupling in Pb islands on single-crystalline graphene

Introducing metal thin films on two-dimensional (2D) material may present a system to possess exotic properties due to reduced dimensionality and interfacial effects. We deposit Pb islands on single-crystalline graphene on a Ge(110) substrate and studied the nano- and atomic-scale structures and low-energy electronic excitations with scanning tunneling microscopy/spectroscopy (STM/STS). Robust quantum well states (QWSs) are observed in Pb(111) islands and their oscillation with film thickness reveals the isolation of free electrons in Pb from the graphene substrate. The spectroscopic characteristics of QWSs are consistent with the band structure of a free-standing Pb(111) film. The weak interface coupling is further evidenced by the absence of superconductivity in graphene in close proximity to the superconducting Pb islands. Accordingly, the Pb(111) islands on graphene/Ge(110) are free-standing in nature, showing very weak electronic coupling to the substrate.     

向心加速度公式的教具制作及其教学研究——基于Tracker和Phyphox软件的定量探究

从教具制作、定量实验探究和教学启示等三方面来探究匀速圆周运动的向心加速度公式,即利用自制教具探究向心加速度αc与圆周运动半径r和角速度ω之间的定量关系.实验发现,结果非常好地符合理论预期.最后讨论了该教具所蕴含的教学启示,可以将其设计成适合高中物理教学的验证性、探究性实验及课外科创活动,从而培养学生的科学探究能力、科学...     

Structure of liquid-vapor interface of square well fluid confined in a cylindrical pore

By means of the canonical Monte Carlo simulations, the vapor-liquid (VL) equilibrium and structure of square well (SW) fluids confined in a single cylindrical pore with repulsive surface, have been studied. Coexistence curves of the confined VL interface are determined for a wide range of temperatures and pore diameters. It is demonstrated that the confinement not only reduces the VL coexistence region but also induces strong inhomogeneities of the VL interface: coexistence liquid densities are different at the pore center and at the wall surface. It may be considered as a preliminary step for an isolated droplet formation inside the pore, as well as a tentative reason of the two VL phase transitions of simple fluids adsorbed into disordered porous media.     

On the binding energies of excitons in polar quantum well structures in a weak electric field

The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.     

MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性

研究了用金属有机物气相外延(MOVPE)法在蓝宝石衬底上生长的In组分浓度保持不变的InGaN/GaN单量子阱结构在室温下的发光特性和光吸收特性.实验结果表明,在InGaN厚度<3nm时,随着样品InGaN势阱层宽度的增加(1nm),光致发光(PL)谱的发光峰值波长出现明显的红移33nm现象,而且发光强度下降8%,谱线半峰全宽(FWHM)展宽,通过对样品的透射、反射光谱研究发现,量子阱层窄(1.5nm)的样品在波长接近红外区时出现无吸收的现象,即R+T达到了100%,而在阱层较宽的样品中没有发现这一现象,对引起这些现象的原因进行了讨论.这些结果有助于开发和优化三族氮化物半导体光电器件的进一步研究工作.