Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.     

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

In this work we investigate electron–impurity binding energy in GaN/HfO₂ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron–impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron–impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO₂ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.     

Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell

The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (I_ex). The changes in the ideality factor (n) and short circuit current (J_SC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (F_J) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs.     

正切平方势单量子阱的本征值和本征函数

鉴于“方形”势阱描述量子阱中的电子运动行为过于简单、过于理想,引入了正切平方势来代替,使结果得到了改善。在量子力学框架内,利用正切平方势把电子的Schrdinger方程化为超几何方程,利用系统参数和超几何函数严格地求解了电子的本征值和本征函数,并以Ga_1-xAl_xAs-GaAs-Ga_1-xAl_xAs量子阱为例计算了电子的能级和能级之间的跃迁。结果表明,电子在量子阱中的能量是量子化的,而相邻能级之间的跃迁给出与实验进一步符合的结果。     

Self-assembling and phase coexistence of SW trimers as complex amphiphile analogues. I. Simulations

We analyse by discrete molecular dynamics the self-assembly of SW trimer particles that contain a different number of attractive and repulsive spheres. They also have different geometries: linear, obtuse, rectangular and equilateral. We identify that some of these molecules exhibit liquid–vapour equilibria while others do not. For all of them, we show the morphological phase diagram built up from the different supra-molecular structures formed by each type of trimer. We simulated 14 different systems with a total of 321 states. The main features of the supra-molecular structures depend only on the composition and geometry of the trimer: triple SW trimers do not form supra-structures, double SW trimers and single SW trimers form monolayers, bilayers and worm-like micelles. The liquid–vapour coexistence properties are also exhibited. These trimers can be used to model complex amphiphiles beyond the standard ones, such as the Gemini and the Bola surfactants as well as colloidal particles.     

基于改进格林元的压裂水平井动态分析方法

以建立高效的动态分析方法为出发点,以边单元作为求解点,改进传统的格林元方法,减少未知数和求解矩阵维度;并提出基于改进格林元的加密网格加密方法,保证考虑复杂裂缝网络的压裂水平井动态模拟的早期精度.退化模型与半解析解、数值模拟结果进行对比,验证本文基于加密网格的改进格林元方法的准确性和动态分析的高效性.最后进行动态响应的敏感性分析,结果表明：①格林元方法是一种高精度的动态模拟方法,将求解节点设置在网格的边上可以提高压裂水平井动态模拟的速度;②改进格林元方法的加密基于叠加原理,不需要通过插值近似,其求解精度高.在相同加密网格条件下,基于本文改进格林元方法的加密效果比有限差分加密效果更佳;③复杂裂缝导流能力、改造区渗透率提高倍数、改造区大小等参数对压裂水平井动态特征影响较大,在动态分析和参数反演时,应着重考虑这些因素的影响.     

Laser control of magneto-polaron in transition metal dichalcogenides triangular quantum well

We study the dynamic of magneto-polaron condensate in monolayer two dimensional (2D) transition metal dichalcogenides (TMDs) materials of 2H types in triangular quantum well potential. Within both the quantum mechanical Schrödinger approach (QMSA) and the improved Wigner-Brillouin theory (IWBT), Landau energies levels (LELs) are derived. We have shown that the magneto-polaron condensation is enhanced in monolayer MoSe₂ compared to MoS₂, WS₂ and WSe₂. We derive various levels by increasing a magnetic field and laser parameter. We show that the quantum confinement lifts the degeneracy of the Landau levels (LLs) resulting in an anticrossing and crossing. The dephasing effect due to the quantum well potential's parameter plays an important role in the magneto-polaron energy corrections, which are also affected by the amplitude of the laser field. The system presents Stückelberg oscillations which is important for practical applications.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

长中半径水平井钻柱接触摩擦阻力分析

用整体钻柱静力模型和间隙元法,分析了长中半径水平井钻柱的接触非线性问题,算出了钻柱与井壁接触摩擦阻力的分布,为水平井井眼轨道设计和施工提供了重要参数。     

P schl-Teller势阱中线性与非线性光学折射率变化

利用量子力学中的密度矩阵算符理论导出了P schl-Teller势阱中的线性与三阶非线性光学折射率的解析表达式。P schl-Teller势阱中有两个可调参数κ和λ,势阱的形状及其非对称性会随势阱参数的取值不同而明显不同,从而其线性与非线性光学折射率变化的大小也会随势阱参数和入射光强的变化而呈规律性的变化。文章以典型的GaAs/AlGaAs势阱为例作了数值计算,数值计算结果表明,势阱的形状和入射光强对光学折射率有着重要的影响。