Electric field induced metal–insulator transition in VO2 thin film based on FTO/VO2/FTO structure

A VO₂ thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO₂ (FTO) conductive glass substrate. The FTO/VO₂/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I–V hysteresis loop for the FTO/VO₂/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO₂/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.     

The effect of applied negative bias voltage on the structure of Ti-doped a-C:H films deposited by FCVA

Ti-doped hydrogenated diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates by a filtered cathodic vacuum arc (FCVA) method using Ar and CH₄ as the feedstock. The composition and microstructure of the films were investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and IR spectroscopy. The internal stress was determined by the radius of curvature technique. The influence of the bias voltage on the microstructure of the as-deposited films was investigated. It was found that the graphite-like bonds was dominated in the Ti-doped DLC film deposited at 0 V bias voltage. When bias voltage was increased to −150 V, more diamond-like bond were produced and the sp³ content in film reached the maximum value, after which it decreased and more graphite-like bonds feature produced with further increase of the negative bias voltage. The compressive internal in the Ti-doped DLC films also exhibited a maximum value at −150 V bias voltage. IR results indicated that CH bonded intensity reduced, and H atoms bonded with C atoms were substituted for the Ti atoms as the negative bias voltage increasing. All the composition and microstructure change can be explained by considering the plasma conditions and the effect of negative bias voltage applied to the substrate.     

Remarkably improved cycling stability of 3D porous Cu–Sn anode for lithium-ion full cells by adjusting working voltage range

Numerous studies confirm that three dimensional porous Cu–Sn (3DP Cu–Sn) anode possesses good application prospect in light of its desirable electrochemical performance on lithium ion half cells, but there are a few related systematic researches on lithium ion full cells until now, which is indispensable before its commercialization. Herein, the effects of galvanostatic charge-discharge voltage range on the cycling stability of 3DP Cu–Sn anode for lithium ion full cells are investigated systematically. The results show that the suitable charge-discharge voltage range plays a key role in improving the reversible capacity and cycling stability of the 3DP Cu–Sn||LiCoO₂ full cell, which is closely related to maintaining the electrode structure stable by controlling the amount of Li⁺ extracted and inserted. Especially, in the voltage range of 1.2–3.9 ​V, the full cell exhibits remarkably improved electrochemical properties with the high initial reversible capacity of 2.71 ​mAh cm⁻² and 71.95% capacity retention upon 80 cycles. We believe that this work can provide a significant reference for the practical application of porous Sn-based anodes.     

二硫化锡纳米片阻变存储器的制备与性能

采用水热法合成了尺寸为50~100 nm的二硫化锡纳米片,并首次以二硫化锡作为阻变层材料的阻变存储器（Cu/PMMA/SnS₂/Ag,PMMA=聚甲基丙烯酸甲酯）,对其阻变性能进行了研究。结果表明： Cu/PMMA/SnS₂/Ag阻变存储器的开关比约10⁵,耐受性2.7×10³。在上述2项性能指标达到较优水平的同时,开态与关态电压分别仅约为0.28与-0.19 V。     

Sulfone-based high-voltage electrolytes for high energy density rechargeable lithium batteries:Progress and perspective

Further enhancement in the energy density of rechargeable lithium batteries calls for high-voltage cathode materials and stable anodes,as well as matched high-voltage electrolytes without compromising the overall property of batteries.Sulfone-based electrolytes have aroused great interest in recent years owing to their wide electrochemical window and high safety.However,significant challenges such as the complexity of synthesis,high melting point(typically above room temperature),high viscosity,and their poor compatibility with graphite-based anodes have drastically impeded their practical applications.In this review,recent progress of sulfone solvents in high energy density rechargeable lithium batteries is summarized theoretically and experimentally.More importantly,general improvement methods of sulfone-based electrolytes,such as adding additives and cosolvents,structural modifications of sulfo ne,superconcentrated salt strategy are briefly discussed.We expect that this review provides inspiration for the future developments of sulfone-based high-voltage electrolytes(SHVEs) and their widespread applications in high specific energy lithium batteries.     

Effect of relative humidity on current–voltage characteristics of monopolar DC wire-to-plane system

This paper deals with the DC monopolar corona discharge in wire-to-plane geometry under variable humid air conditions. The classical formulas of Townsend commonly used for the current–voltage characteristics were used to determine the various corona parameters for the both polarities of the corona discharge. A circular biased probe has been adapted to the plane and is used to measure the ground plane current density and electric field during the monopolar corona discharge. A new approach to the problem of corona discharge in transmission system has been described in this paper. The effect of varying the humidity and wires diameter is also investigated. The values of the electric field and the current density are maximum beneath the corona wire and decrease when moving away from them and the current–voltage characteristics follow the quadratic Townsend's law. The experimental results show that the monopolar corona discharge is strongly affected by the air humidity. The current density and the electric field are measured and compared with the computed values. The agreement between the calculated values and those obtained experimentally is satisfactory. The per unit electric field and current density are also represented by a unique function.     

关于开设内光电效应实验的探索与思考

介绍了开设以内光电效应为理论基础的半导体光电器件的重要性和迫切性,并详细介绍了内光电效应的理论与半导体光电器件的分类和应用前景。     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.     

Voltage‐Driven Reversible Insertion into and Leaving from a Lipid Bilayer: Tuning Transmembrane Transport of Artificial Channels

Three new artificial transmembrane channel molecules have been designed and synthesized by attaching positively charged Arg‐incorporated tripeptide chains to pillar[5]arene. Fluorescent and patch‐clamp experiments revealed that voltage can drive the molecules to insert into and leave from a lipid bilayer and thus switch on and off the transport of K⁺ ions. One of the molecules was found to display antimicrobial activity toward Bacillus subtilis with half maximal inhibitory concentration (IC₅₀) of 10 μM which is comparable to that of natural channel‐forming peptide alamethicin.     

激光诱导击穿光谱法对钢中夹杂物类型的表征

激光诱导击穿光谱( LIBS)不仅可以对材料整体成分进行分析,还可进行微区及成分分布分析。本实验采用激光诱导击穿光谱对两牌号钢铁样品进行扫描分析,尝试对34CrNiMo6钢中的MnS夹杂物和重轨钢中的Si-Al-Ca-Mg复合夹杂物进行表征。结果表明,34CrNiMo6钢中元素信号的二维强度分布及元素通道合成后,个别位置Mn及S两元素的信号强度同时异常高,可确定试样中存在较多MnS夹杂物;重轨钢中元素的二维强度分布及元素通道合成后,个别位置Si、Ca、Mg及Al元素的信号同时异常高,可确定试样中存在Si-Al-Ca-Mg复合夹杂物。采用扫描电子显微镜/能谱法( SEM/EDS)对上述样品中夹杂物的对比分析结果表明,两种方法对夹杂物类型的判定结果一致。