Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

正电子产生靶上初级电子束半径的最小化研究

为获得尽可能高的正电子(e⁺)产额,严格控制初级电子(e^－)束在e⁺产生靶上的束半径是至关重要的.首先分析了使e^－束半径增大的各因素和对这些因素的制约;然后以北京正负电子对撞机(BEPC)的正电子源为例,给出了束半径的实测值和计算值的比较,以具体说明这些因素的影响;最后讨论了北京正负电子对撞机二期工程(BEPC-Ⅱ)的相应优化设计研究,提出了获得靶上最小束半径的若干途径.     

Resistance of nondiffracting vortex beam against amplitude and phase perturbations

The revival of the nondiffracting vortex beam after its interaction with the 2D on axis obstacle is examined. We show that the phase topology and the spatial distribution of the orbital angular momentum of the beam transmitted through the obstacle regenerate to the initial form during further free propagation. We verify that the healing effect appears even if the interaction is accompanied by the exchange of the orbital angular momentum.     

Optical characterization of high speed microscanners based on static slit profiling method

Optical characterization of high-speed microscanners is a challenging task that usually requires special high speed, extremely expensive camera systems. This paper presents a novel simple method to characterize the scanned beam spot profile and size in high-speed optical scanners under operation. It allows measuring the beam profile and the spot sizes at different scanning angles. The method is analyzed theoretically and applied experimentally on the characterization of a Micro Electro Mechanical MEMS scanner operating at 2.6 kHz. The variation of the spot size versus the scanning angle, up to ±15°, is extracted and the dynamic bending curvature effect of the micromirror is predicted.     

397 GHz斜注管互作用系统的设计模拟

斜注管是返波振荡器的一种,通过电子注的倾斜,电子距离慢波结构更近,高频场更强,耦合阻抗和互作用效率更高,显著增加输出功率。对带状注斜注管的互作用系统进行了设计,并首次将双排齿慢波结构应用于斜注管。利用电磁模拟软件和3D粒子模拟软件对设计的斜注管的色散曲线和场分布进行了分析,并对其注-波互作用进行了模拟,可以得到大于100 mW的输出功率以及50 GHz的调谐带宽。输出功率在370.5 GHz频点处处达到峰值2.3 W,电子注电压7.0 kV,注电流120 mA,聚焦磁场1.0 T。     

Localized states emission in type‐I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy

As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb‐based multiple quantum wells (MQWs) are crucial. The temperature‐ and excitation power‐dependent photoluminescence (PL) spectra of the GaAs_0.92Sb_0.08/Al_0.2Ga_0.8As MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low‐energy shoulder was confirmed to be localized states emission (LE) and the high‐energy side peak was confirmed to be free‐carrier emission by its temperature‐dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb‐based MQWs in infrared semiconductor lasers.

     

Normal tracing deflectometry using a secondary light source

Scanning deflectometric profilers based on an f–gθ system are typical optical tools used to measure mirror profiles at many synchrotron facilities. Unlike these profilers, which are based on a pencil beam, here a secondary light source and a pinhole are used to construct a system that automatically selects a beam that will always pass through the pinhole and propagate along the normal direction of the measured area on the surface under test. By measuring the angle variation of the selected beam, slope variations of the surface under test can be measured. Systematic errors introduced by manufacturing defects or aberrations of an optical element, which greatly degrade the performance of traditional profilers, could be minimized by using the developed method. Simulation values of the proposed method and a conventional method are compared.     

Comparison of the PIC model and the Lie algebraic method in the simulation of intense continuous beam transport

Both the PIC (Particle-In-Cell) model and the Lie algebraic method can be used to simulate the transport of intense continuous beams. The PIC model is to calculate the space charge field, which is blended into the external field, and then simulate the trajectories of particles in the total field; the Lie algebraic method is to simulate the intense continuous beam transport with transport matrixes. Two simulation codes based on the two methods are developed respectively, and the simulated results of transport in a set of electrostatic lenses are compared. It is found that the results from the two codes are in agreement with each other, and both approaches have their own merits.     

A new beam asymmetry measurement from pion photoproduction on the neutron using CLAS

We present a preliminary analysis of the photon beam asymmetry observable （Z） from the pho- toproduction reaction channel γn → pπ in the invariant mass range 1.6--2.3 GeV. The measurement was obtained using the near-4π CEBAF Large Acceptance Spectrometer （CLAS） at Jefferson Laboratory, USA, employing a linearly polarised photon beam with an energy range 1.1 2.3 GeV, incident on a liquid deuterium target. The measurement will provide new data to address the poorly established neutron excitation spectrum and will greatly expand the sparse world data-set both in energy and angle.