高压下某些导电高分子色散关系的研究

利用晶格动力学方法,研究在高压下几种导电高分子具有不同晶格链时的色散关系及其曲线的变化.链间耦合作用的减弱使横波与纵波的ω差值相应增大,且在BZ边界处拉开一个间隙,这是维度作用的结果.     

n维氢原子的散射态

研究了n维氢原子的散射态性质．给出了精确的按“k/2π标度”归一化的散射态的精确解波函数及相移表达式，讨论了相移的解析性质，获得了束缚-连续跃迁矩阵元的解析计算公式．普通氢原子(n=3)散射态的有关结果作为特例包含在本文的一般结论之中． 关键词： n维氢原子 散射态 精确解 相移 束缚-连续跃迁矩阵元     

A class of multivariate skew-normal models

The existing model for multivariate skew normal data does not cohere with the joint distribution of a random sample from a univariate skew normal distribution. This incoherence causes awkward interpretation for data analysis in practice, especially in the development of the sampling distribution theory. In this paper, we propose a refined model that is coherent with the joint distribution of the univariate skew normal random sample, for multivariate skew normal data. The proposed model extends and strengthens the multivariate skew model described in Azzalini (1985,Scandinavian Journal of Statistics,12, 171–178). We present a stochastic representation for the newly proposed model, and discuss a bivariate setting, which confirms that the newly proposed model is more plausible than the one given by Azzalini and Dalla Valle (1996,Biometrika,83, 715–726).     

Point-to-Periodic and Periodic-to-Periodic Connections

In this work we consider computing and continuing connecting orbits in parameter dependent dynamical systems. We give details of algorithms for computing connections between equilibria and periodic orbits, and between periodic orbits. The theoretical foundation for these techniques is given by the seminal work of Beyn in 1994, “On well-posed problems for connecting orbits in dynamical systems”, where a numerical technique is also proposed. Our algorithms consist of splitting the computation of the connection from that of the periodic orbit(s). To set up appropriate boundary conditions, we follow the algorithmic approach used by Demmel, Dieci, and Friedman, for the case of connecting orbits between equilibria, and we construct and exploit the smooth block Schur decomposition of the monodromy matrices associated to the periodic orbits. Numerical examples illustrate the performance of the algorithms. This revised version was published online in July 2006 with corrections to the Cover Date.     

广义酉矩阵与广义Hermite矩阵

给出了广义酉矩阵与广义(斜)Hermite矩阵的概念，研究了它们的性质及其与酉阵、共轭辛阵、Hermite阵、Hamilton及广义逆矩阵之间的联系；取得了许多新的结果；推广了酉矩阵、Hermite阵与斜Hermite阵间的相应结果，特别将正交阵的广义Cayley分解推广到了广义酉矩阵上；将各类酉矩阵、Hermite矩阵及广义逆矩阵统一了起来．     

Optical investigation of cavitation erosion by laser-induced bubble collapse

By means of a new force sensor based on optical beam deflection (OBD), the mechanical effects of laser-matter interaction underwater at different incident laser energy are investigated in detail. The experimental results show that a target underwater is impacted in turn by laser-plasma ablation force and high-speed liquid-jet impulse induced by bubbles collapse in the vicinity of a solid boundary. Furthermore, the amplitudes of the two forces increase monotonously with laser energy. According to the ablation force detected by the experiment and the theoretical relationship between laser intensity and ablation pressure, the value of liquid-jet impact against a solid boundary can be easily obtained. In addition, based on the model of a collapsing bubble, some characteristic parameters, such as the liquid-jet impact velocity, the maximum bubble radius, the bubble energy can also be obtained at different laser energy, which are valuable in the corresponding research fields.     

Universality and summability of trigonometric polynomials and trigonometric series

Periodica Mathematica Hungarica -     

Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga⁺ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.     

“矩阵有理插值及其误差公式”一文的注

本文对文[1]中所给出的错误的误差公式做了修订,并给出了相应的证明。