皮秒脉冲功率技术理论模型及其优化设计

为了产生100~500 ps,200~500 kV,1~10 kA数量级的皮秒放电脉冲,建立了一个皮秒脉冲发生器理论模型,并提出利用增益系数极值法,确定其最大兼容工作点,相对于纳秒脉冲成形线,皮秒脉冲成形线实现了90%,70%,85%的归一化电压增益、能量增益和放电功率增益。为了最大限度地降低皮秒脉冲成形线的载压时间,提高系统的绝缘安全因子,利用华罗庚0.618优算法,设计了电压传输系数。在纳秒脉冲成形线与皮秒脉冲成形线阻抗比值等于1.63条件下,在4倍和6倍皮秒脉冲成形线时间之内,归一化电压增益、能量增益和放电功率增益就可以分别达到94%,72%,89%与99%,53%,97%。     

A novel optical beam splitter based on photonic crystal with hybrid lattices

A novel optical beam splitter constructed on the basis of photonic crystal(PC) with hybrid lattices is proposed in this paper.The band gap of square-lattice PC is so designed that the incident light is divided into several branch beams.Triangular-lattice graded-index PCs are combined for focusing each branch.Computational calculations are carried out on the basis of finite-different time-domain algorithm to prove the feasibility of our design.The waveguide is unnecessary in the design.Thus the device has functions of both splitting and focusing beams.Size of the divided beam at site of full-width at half-maximum is of the order of λ/2.The designed splitter has the advantages that it has a small volume and can be integrated by conventional semiconductor manufacturing process.     

Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer

We discuss the role of the Al interlayer in the suppression of pinhole formations and also look at the polarity transition of the AlN layers from N-polarity to Al-polarity when this Al interlayer is present. The AlN layers were grown by molecular beam epitaxy on an AlN nucleation layer. A thin Al interlayer was deposited on the initial nucleated AlN layer after the nitridation of the Al-soaked Si (111) substrates. The AlN layer with an Al interlayer showed a relatively smooth surface with a reduced density of pinholes compared with the AlN layer grown without an Al interlayer. In addition, the AlN layer with an Al interlayer showed some stacking faults in the interface between the Si substrate and the A1N layer. We also identify the polarity change of the AlN layer after the insertion of a thin Al interlayer from N-polarity to Al-polarity by chemical etching. A simple model is constructed to explain the polarity change and the pinhole suppression due to the Al interlayer.     

光学渡越辐射测量中能量分辨精度分析

 基于光学渡越辐射原理的用于高能强流电子束束流参数在线测量及诊断系统,具有时间响应快、分辨率高等特点,可以测量电子束的束剖面、发散角、能量等多个参数。分析了测量系统的结构参数（包括了透镜的焦距、成像面位置、CCD像元尺寸）对电子束能量测量精度的影响,并在理论上模拟了电子束的发散角的影响。还根据系统数据的特点,阐述了数据噪声对能量测量结果精度的影响,指出了光学渡越辐射测量中电子束能量分辨精度受到多种因素的影响,需要在数据处理时考虑修正。     

高In组分InGaNAs/GaAs量子阱的生长及发光特性

采用分子束外延技术(MBE)在Ga As衬底上外延生长高In组分(40%)In Ga NAs/Ga As量子阱材料,工作波长覆盖1.3~1.55μm光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和In Ga NAs/Ga As量子阱的生长特性。结果表明:N组分增加会引入大量非辐射复合中心;随着生长温度从480℃升高到580℃,N摩尔分数从2%迅速下降到0.2%;N并入组分几乎不受In组分和As压的影响,黏附系数接近1;生长温度在410℃、Ⅴ/Ⅲ束流比在25左右时,In_(0.4)Ga_(0.6)N_(0.01)As_(0.99)/Ga As量子阱PL发光强度最大,缺陷和位错最少;高生长速率可以获得较短的表面迁移长度和较好的晶体质量。     

Simple and universal method in designs of high-efficiency diffractive optical elements for spectrum separation and beam concentration

Diffractive optical elements(DOEs) with spectrum separation and beam concentration(SSBC) functions have important applications in solar cell systems. With the SSBC DOEs, the sunlight radiation is divided into several wave bands so as to be effectively absorbed by photovoltaic materials with different band gaps. A new method is proposed for designing high-efficiency SSBC DOEs, which is physically simple, numerically fast, and universally applicable. The SSBC DOEs are designed by the new design method, and their performances are analyzed by the Fresnel diffraction integral method.The new design method takes two advantages over the previous design method. Firstly, the optical focusing efficiency is heightened by up to 10%. Secondly, focal positions of all the designed wavelengths can be designated arbitrarily and independently. It is believed that the designed SSBC DOEs should have practical applications to solar cell systems.     

Scattering of particles in wave beam based on series expansion

Based on the orthogonalities of the vector wave functions, the expressions of scattering fields are developed as the particle in the zero order field and in the first order fields of x, y, and z, respectively. A general relation between the expansion coefficients of scattering field and incident field is presented. Taking the elliptical beam for example, the scattering property of a particle in beam is investigated. After analyzing the effects of the beam waist, irradiating distance, etc. on scattering property, the validity of the proposed algorithm is demonstrated. Results show that the beam waist may improve the particle identification property and the particle has a strong scattering both in the forward direction and in the backward direction. The method proposed is simple and is a new way of researching the scattering from particles in electromagnetic beams.     

研究堆慢正电子源构建中的关键机理问题

研究堆慢正电子源是获得高强度慢正电子束流的有效方式,国际上己建成多座装置并获得广泛应用.与常规同位素慢正电子源相比,研究堆慢正电子源的物理过程复杂,影响末端束流强度的因素众多,对其进行深入研究与合理建模是未来在中国绵阳研究堆(CMRR)上构建慢正电子源的基础.本文厘清了研究堆慢正电子产生的关键过程与物理机理,建立了预测末端正电子束流强度的理论模型,找到了影响其末端强度的主要物理量:快正电子体产生率、慢化体有效表面积、慢化体扩散距离、慢正电子从表面被提取到靶环末端的效率、及束流系统提取效率.用多种实验结果对模型进行校验,包括多个同位素慢正电子源的效率测量值,以及PULSTAR研究堆慢正电子源测量结果,充分验证了模型正确性.根据模型对各物理量的影响因素进行了分析,找到了需着重关注的影响因素,对未来源/靶结构的设计给出建议.     

Progress on the construction of the 100 MeV/100 kW electron linac for the NSC KIPT neutron source

IHEP, China is constructing a 100 MeV/100 kW electron Linac for NSC KIPT, Ukraine. This linac will be used as the driver of a neutron source based on a subcritical assembly. In 2012, the injector part of the accelerator was pre-installed as a testing facility in the experimental hall ≠2 of IHEP. The injector beam and key hardware testing results met the design goal. Recently, the injector testing facility was disassembled and all of the components for the whole accelerator have been shipped to Ukraine from China by the ocean shipping. The installation of the whole machine in KIPT will be started in June, 2013. The construction progress, the design and testing results of the injector beam and key hardware are presented.