多色矢量高斯-谢尔模型光束的焦移和焦开关

从交叉谱密度矩阵的传输公式出发,对多色矢量高斯-谢尔模型（GSM）光束的焦移和焦开关作了详细的研究.插入偏振片之前,多色矢量高斯-谢尔模型（GSM）光束通过硬边光阑透镜分离光学系统后,有焦移,但无焦开关;而插入偏振片之后,会出现焦开关.改变偏振片的旋转角度可以控制焦开关的特性.     

面向变厚度柔性轧制工艺的帽型梁横向冲击吸能优化设计

作为汽车主要吸能构件的帽型梁的吸能提升设计是备受关注的问题.研究表明,通过优化薄壁结构的厚度可有效提升吸能性能,但复杂的厚度分布造成制造困难.针对可实现厚度调控的工艺,发展易制造的结构设计方法极为必要.本文基于变厚度柔性轧制工艺(variable gauge rolling, VGR)可实现厚度调控的特点,发展建立帽型梁横向冲击吸能优化设计方法.基于变厚度柔性轧制工艺生产的柔性轧制板(tailor rolled blanks, TRB)的特点,将受横向冲击的帽型薄壁梁设计成沿轴线分段变厚度、分段间设梯度过渡段的结构形式,通过调整各段厚度、分段位置和过渡层梯度变化规律,实现性能的优化.以应变能密度分布均匀为优化准则、基于混合元胞自动机(hybird cellular automata, HCA)方法构建优化模型和求解方法,并在迭代过程中施加满足轧制约束的过滤函数,使结构满足轧制工艺要求.其中,轧制约束的过滤函数由粒子群算法自动寻找.基于本文方法,具体设计了柔性轧制帽型梁横向冲击吸能最优的分段位置、各段厚度及过渡段厚度的梯度过渡方式,设计结果验证了方法的有效性.      

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

连续梁在周期荷载下的动力稳定性简化分析方法

对于一般任意支撑的连续梁结构动力稳定性问题,已有的计算方法求解过程都很复杂,给工程设计带来极大的不便．本文提出了一个简化的分析方法,利用现有的商业软件,只需求得连续梁的自然频率及静力屈曲（失稳）荷载,就可容易得到结构的动力失稳区域,当考虑结构阻尼对不稳定区域的影响时,可将阻尼矩阵表达为Rayleigh阻尼的形式．研究结果表明：采用本文计算方法与已有的理论计算方法得到的连续梁主参数共振的不稳定边界非常吻合,而本文计算方法更为简单,计算结果可靠,计算精度高,可满足工程设计的需要．     

基于非线性梁理论的有限质点法

有限质点法是以向量式力学为基础,用有限数量的质点来模拟结构的变形行为,质点的运动由牛顿运动定律来计算。在有限质点法中,质点通过构件相连,构件约束着质点的运动,并且其内力由质点的运动变量来描述。基于向量式力学的基本思想和非线性梁理论,提出了一种新的有限质点法,该方法在共旋单元坐标系中描述梁的非线性变形。以空间梁系结构为例,推导了计算构件内力的非线性公式,并考虑了弯扭耦合变形。通过两个连续欧拉角的变换公式得到共旋坐标系的旋转矩阵。与传统的有限质点法相比,本文提出的方法避免了刚体虚转动分析。通过四个结构的数值求解,验证了本文方法在计算结构大变形响应时具有较高的精度。     

Recoil spectrometry: Ion accelerator based elemental characterisation of surface layers

Recoil Spectrometry covers a group of techniques that are very similar to the well known Rutherford backscattering Spectrometry technique, but with the important difference that one measures the recoiling target atom rather than the projectile ion. This makes it possible to determine both the identity of the recoil and its depth of origin from its energy and velocity, using a suitable detector system. The incident ion is typically high-energy (30–100MeV)³⁵C1,⁸¹Br or¹²⁷I. Low concentrations of light elements such as C, O and N can be profiled in a heavy matrix such as Fe or GaAs. Here we present an overview of mass and energy dispersive recoil Spectrometry and illustrate its successful use in some typical applications.     

Ar离子束作用下C60薄膜的结构稳定性研究

利用XPS和AES研究了在Ar离子束作用下C60薄膜的分子结构的稳定性．研究发现C60分子与Ar离子束作用后，C1s结合能从284．7eV逐步下降到284．4eV，CKLL俄歇动能从270．0eV增加到271．3eV．并且C60薄膜在与氩离子束作用后，其C60分子结构特征的C1s携上峰及价带峰均消失．表明Ar离子束可以促使C60分子的C＝C双键断裂，离域π键消失，C60分子分解为单质碳．C＝C双键断裂过程与离子束的能量和辐照时间有一定的函数关系．     

Pulsed,Crossed, Supersonic Molecular Beam Studies of Refractory Atom Reactions

Dynamics of refractory atom reactions have been studied with a crossed beam apparatus combining two pulsed, supersonic molecular beam sources, a pulsed UV laser for creating the refractory atoms in the gas phase by laser ablation, and a pulsed dye laser to probe the reaction products by laser-induced fluorescence. Examples of the A1(²P_j) + O₂(X³∑_g)→ A10(X²∑⁺) + O(³P_j), Mg(¹S_o) + N₂O(X¹∑⁺) → MgO(X¹∑⁺,a³Π) + N₂(X¹∑_g⁺) andC(³P_j) + NO(X²Π_r) → CN(X²∑⁺) + 0(³P_j) systems are given. Comparisons with the studies performed using the conventional steady-state beam approach are made.     

C60离子束撞击固体表面的坍塌与沉积(II)扫描隧道显微研究

Mass-selected C60 beam produced by laser ablation was accelerated and bombarded the (0001) surface of highly oriented pyrolitic graphite and (111) surface of gold single crystal. The samples were characterized by STM. The STM images showed that, the deposited species collapsed and formed planar structure on the solid surface, but the collapsed species were not dissociated and well oriented on the surface. Both positive and negative C60 ions were observed in the desorption mass spectra, confirming that the species collapsed on the solid surface are still the C60 clusters.     

Phase formation and impurity effects in Ar+ ion irradiated Mo/Si thin film bilayer system

We report a dose‐dependent phase evolution in Mo/Si bilayer system upon Ar⁺ ion beam irradiation and subsequent flash annealing at 800 °C for 60 s. Micro‐structural characterization with Grazing Incidence X‐ray Diffraction and Raman scattering reveals a dose‐dependent nucleation of polymorphic phases occurring at the amorphized interface region. The ion beam mixing process has been investigated by Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry. While low ion doses favour nucleation of only metastable MoSi₂ phase, co‐existence of polymorphic phases are observed at high ion doses. The persistence of such polymorphic phases even after a high‐temperature anneal for high dose implanted specimen is indicative of phase retardation. The phase retardation of h‐MoSi₂ to t‐MoSi₂ is accounted in terms of nucleation and growth process. Copyright © 2012 John Wiley & Sons, Ltd.