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51.
This paper performs a numerical simulation of concentric-ring discharge structures within the scope of a two-dimensional diffusion--drift model at atmospheric pressure between two parallel circular electrodes covered with thin dielectric layers. With a relative high frequency the discharge structures present different appearances of ring structures within different radii in time due to the evolvement of the filaments. The spontaneous electron density distributions help understanding the formation and development of self-organized discharge structures. During a cycle the electron avalanches are triggered by the electric field strengthened by the feeding voltage and the residual charged particles on the barrier surface deposited in the previous discharges. The accumulation of charges is shown to play a dominant role in the generation and annihilation of the discharge structures. Besides, the rings split and unify to bring and annihilate rings which form a new discharge structure.  相似文献   
52.
The effect of oxygen plasma treatment on the performance of GaN Schottky barrier diodes is studied. The GaN surface is intentionally exposed to oxygen plasma generated in an inductively coupled plasma etching system before Schottky metal deposition. The reverse leakage current of the treated diodes is suppressed in low bias range with enhanced diode ideality factor and series resistance. However, in high bias range the treated diodes exhibit higher reverse leakage current and corresponding lower breakdown voltage. The X-ray photoelectron spectroscopy analysis reveals the growth of a thin GaOx layer on GaN surface during oxygen plasma treatment. Under sub-bandgap light illumination, the plasma-treated diodes show larger photovoltaic response compared with that of untreated diodes, suggesting that additional defect states at GaN surface are induced by the oxygen plasma treatment.  相似文献   
53.
A density-functional theory method has been conducted to investigate the adsorption of CHx (x = 0-4) as well as the dissociation of CHx (x = 1-4) on (1 1 1) facets of ordered NiCo alloy. The results have been compared with those obtained on pure Ni (1 1 1) surface. It shows that the adsorption energies of C and CH are decreased while it is increased for CH3 on NiCo (1 1 1) compared to those on pure Ni (1 1 1). Furthermore, on NiCo (1 1 1), dissociation of CHx prefers not to the top of Ni, but to the top of Co. The rate-determining step for CH4 dissociation is considered as the first step of dehydrogenation on NiCo (1 1 1), while it is the fourth step of dehydrogenation on Ni (1 1 1). Furthermore, the activation barrier in rate-determining step is slightly higher by 0.07 eV on Ni (1 1 1) than that on NiCo (1 1 1). From above results, it is important to point out that carbon is easy to form on NiCo (1 1 1) although the adsorption energy of C atom is slightly decreased compared to that on Ni (1 1 1).  相似文献   
54.
In IgM paraproteinemia and peripheral neuropathy, IgM M-protein secretion by B cells leads to a T helper cell response, suggesting that it is antibody-mediated autoimmune disease involving carbohydrate epitopes in myelin sheaths. An immune response against sulfoglucuronosyl glycosphingolipids (SGGLs) is presumed to participate in demyelination or axonal degeneration in the peripheral nervous system (PNS). SGGLs contain a 3-sulfoglucuronic acid residue that interacts with anti-myelin-associated glycoprotein (MAG) and the monoclonal antibody anti-HNK-1. Immunization of animals with sulfoglucuronosyl paragloboside (SGPG) induced anti-SGPG antibodies and sensory neuropathy, which closely resembles the human disease. These animal models might help to understand the disease mechanism and lead to more specific therapeutic strategies. In an in vitro study, destruction or malfunction of the blood-nerve barrier (BNB) was found, resulting in the leakage of circulating antibodies into the PNS parenchyma, which may be considered as the initial key step for development of disease.  相似文献   
55.
The reaction of Bis(ethyl-methyl-amino)silane (BEMAS) and water in atomic layer deposition (ALD) became possible when Zr-containing species were adsorbed on the vacant sites of the surface after a pulse and purge of BEMAS. The growth rates of the Si(Zr)Ox films were 0.8-0.9 nm/cycle in the temperature range of 185-325 °C. This phenomenon probably originates from the highly reactive hydroxyl species generated by Zr atoms. From this point of view, transition metals make reactant gas molecules to be highly activated in the ALD processes of transition metal oxides and nitrides, which might be an important factor that determines the ALD characteristics.  相似文献   
56.
本文采用显微拉曼光谱技术 ,对云南省永仁县菜园子出土的新石器时期白石斧的表面和截面进行了测试研究 ,结合矿物拉曼谱确定了石斧白色和黑色物质的成分。通过对白石斧截面拉曼谱的分析 ,得出了石斧拉曼主峰 (46 2cm- 1 )的强度随深度变化情况的散点图 ,实验结果发现 ,石斧表面的腐蚀层厚约为 40 0 μm。石斧截面拉曼谱给出了与石斧埋葬年代和周围环境有关的信息  相似文献   
57.
Inspired by the promising potential of re-configurable intelligent surface (RIS)-aided transmission in achieving the vision of 6th Generation (6G) network, we analyze the security model for a vehicular-to-infrastructure (V2I) network by considering multiple RISs (M-RIS) on buildings to act as passive relays at fixed distances from a source. In addition, multiple eavesdroppers are presented in the vicinity of the intended destination. Our aim is to enhance the secrecy capacity (SC) and to minimize secrecy outage probability (SOP) in presence of multiple eavesdroppers with the help of M-RIS in V2I communications. We propose a key-less physical layer security using beam-forming by exploiting M-RIS. The proposed approach assumes the concept of detecting eavesdroppers before the information can be transmitted via beam-forming by utilizing M-RIS. The results reveal that with consideration of M-RIS and beam-forming, the achievable SC and SOP performance is significantly improved while imposing minimum power consumption and fewer RIS reflectors.  相似文献   
58.
以陶瓷厚膜为绝缘层的红色ZnS:Sm,Cl电致发光器件   总被引:3,自引:1,他引:3  
报道采用高介电常数的陶瓷厚膜作绝缘层、ZnS:Sm,Cl作为发光层的红色薄膜电致发光器件。测量了器件的电致发光光谱和亮度电压曲线,研究了发光机理和效率电压等特性。制备的器件在电驱动下16V启亮,最大亮度为18.4cd/m^2,最大效率为0.061m/W。  相似文献   
59.
The distinctive features of the atomic and electronic structure of thin surface layers of substances in the process of formation of epitaxial silicon films on silicon are studied using the procedures of reflection and scattering of ultrasoft x-ray radiation. The angular distribution of the scattered x-ray radiation (the scattering indicatrices) and the near fine structure of SiL2,3 spectra of reflection are investigated. The assumption of the sensitivity of the observed peak of anomalous scattering (the Yoneda peak) of x-ray radiation to the presence, in the surface regions of the materials, of extended double-boundary defects, the defects of packing, grain boundaries, dislocations, etc. is made. It is shown that the experimental procedure used makes it possible to obtain information on the surface layers of substances. Translated from Zhurnal Priklaldnoi Spektroskopii, Vol. 67, No. 4, pp. 496–498, July–August, 2000.  相似文献   
60.
The superconducting and magnetic properties of Nb/Pd1-xFex/Nb triple layers with constant Nb layer thickness dNb=200 ? and different interlayer thicknesses 3 ?≤ dPdFe ≤ ? are investigated. The thickness dependence of the magnetization and of the superconducting transition temperature shows that for small iron concentration x the Pd1-xFex layer is likely to be in the paramagnetic state for very thin films whereas ferromagnetic order is established for x ≥ 0.13. The parallel critical field Bc2||(T){B_{c2||}}(T) exhibits a transition from two-dimensional (2D) behavior where the Nb films are coupled across the interlayer, towards a 2D behavior of decoupled Nb films with increasing dPdFeand/or x. This transition allows a determination of the penetration depth xF{\xi _F} of Cooper pairs into the Pd1-xFex layer as a function of x. For samples with a ferromagnetic interlayer xF{\xi _F} is found to be independent of x.  相似文献   
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