Correlation of band electronic structure with efficiency in perovskite solar cells with vanadium (Ⅳ) oxide thin film buffers

Perovskite solar cells have been studied extensively in the area of perovskite solar cells because they have a comparatively free hysteresis. Through fabrication of a perovskite solar cell based on a vanadium oxide buffer, this study clarified the mechanism of electron and hole transport in the laminated layer upon irradiation with light. The power conversion efficiency (PCE) of the Vanadium (Ⅳ) oxide (VO₂) sputtering process device was approximately 13% and with the spin-coating process was 8.5%. To investigate the physicochemical origin of such PCE differences depending on the process type, comprehensive band alignment and band structure analyses of the actual cell stacks were performed using X-ray photoelectron spectroscopy depth measurements. Accordingly, it was found that the inconsistent valence band offset between the perovskite absorption layer and V₂O₅ layer as a function of the VO₂ process type caused a difference in the hole transport, resulting in the difference in the efficiency.     

Generating Multidirectional Variable Hidden Attractors via Newly Commensurate and Incommensurate Non-Equilibrium Fractional-Order Chaotic Systems

This article investigates a non-equilibrium chaotic system in view of commensurate and incommensurate fractional orders and with only one signum function. By varying some values of the fractional-order derivative together with some parameter values of the proposed system, different dynamical behaviors of the system are explored and discussed via several numerical simulations. This system displays complex hidden dynamics such as inversion property, chaotic bursting oscillation, multistabilty, and coexisting attractors. Besides, by means of adapting certain controlled constants, it is shown that this system possesses a three-variable offset boosting system. In conformity with the performed simulations, it also turns out that the resultant hidden attractors can be distributively ordered in a grid of three dimensions, a lattice of two dimensions, a line of one dimension, and even arbitrariness in the phase space. Through considering the Caputo fractional-order operator in all performed simulations, phase portraits in two- and three-dimensional projections, Lyapunov exponents, and the bifurcation diagrams are numerically reported in this work as beneficial exit results.     

信息化课堂教学设计--以“刚体定轴转动的角动量及角动量守恒定律”为例

遵循“学生主体、教师主导”的教育教学理念,借助信息化教学工具,合理有效地设计好每一个教学环节.采用演示、体验、探究、问题导向和分组讨论等教学手段和方法,让学生在课堂中自主发现问题、分析问题并解决问题,实现“学生做中学、教师做中教”,大大提升教学效果.     

Pulsed laser deposition of pure fluoroapatite film without OH groups

The relation between O₂ pressure and composition in the pulsed‐laser deposition of fluoroapatite was investigated using both on‐axis and off‐axis methods to determine the optimal conditions for obtaining a pure fluoroapatite film without OH groups. Through this, it was found that an O₂ pressure of 10 Pa, combined with an off‐axis method, results in P/Ca and F/Ca values (0.6 and 0.2, respectively) that match closely with a stoichiometric composition of Ca₁₀(PO₄)₆F₂. Fourier transform infrared spectroscopy analysis confirmed that this optimized film was almost pure fluoroapatite, with no evidence of any OH groups originating from hydroxyapatite. X‐ray diffraction also revealed that this fluoroapatite film crystallizes with a c‐axis orientation perpendicular to its surface.     

Influence of metal electrodes on c‐axis orientation of AlN thin films deposited by DC magnetron sputtering

Nanocrystalline aluminum nitride (AlN) thin films were deposited on two types of metallic seed layers on silicon substrates, (111) textured Pt and (110) Mo, by reactive DC magnetron sputtering at low temperature (200 °C). Both textured films of Pt and Mo promote nucleation, thereby improving the crystallinity and epitaxial growth condition for AlN thin films. The deposited films were examined by X‐ray diffraction, scanning electron microscopy and atomic force microscopy techniques. The results indicated that the preferred orientation of crystallites greatly depends upon the kinetic energy of the sputtered species (target power) and seed layers used. Furthermore, AlN thin films with c‐axis perpendicular to the substrate grew on both types of metal electrodes at all power levels larger than 100 W. By comparing the structural properties and compressive stresses at perfect c‐axis orientation conditions, it is evident that AlN films deposited on (110) oriented Mo substrates exhibited superior properties as compared with Pt/Ti seed layers. Furthermore, less values of compressive stresses (?3 GPa) as compared with Pt/Ti substrates (?7.08 GPa) make Mo preferentially better candidate to be employed in the field of suspended Micro/Nano ‐ electromechanical systems (MEMS/NEMS) for piezoelectric devices. Copyright © 2017 John Wiley & Sons, Ltd.     

A simple technique for evaluation of transmission coefficient at the splice with angular offset and transverse offset for first higher mode propagation in graded index fibers

We present simple and accurate analytical expressions for transmission coefficient at the splice with angular offset and transverse offset in case of first higher mode propagation in graded index fibers. We employ the simple series expression for first higher order modal field for graded index fiber. The evaluation of the concerned parameters based on our formalism requires very little computations. Here, we show that our estimations match excellently well with the exact results in case of step and parabolic index fibers. Further, splice being highly tolerant for longitudinal separation, our analysis is judiciously restricted to the case of transverse and angular mismatches only. The analysis should find application in dual mode graded index fiber in all optical technology.     

用于抛物柱面空间功率合成天线的功分喇叭阵列

 提出了一种用于偏馈抛物柱面反射天线的功分喇叭。由于改善了口面上的电磁分布,该功分喇叭可以让馈源阵列的栅瓣电平抑制到－28 dB。用FEKO进行仿真发现,与传统用角锥喇叭阵列作为馈源的抛物柱面反射天线相比,使用功分喇叭直线阵列可以使空间功率合成天线的效率从68%提高到80%,同时天线的增益也能增加0.7 dB。     

利用偏置磁极周期会切磁铁产生边聚焦场

 利用理论分析和数值计算的方法,研究了偏置磁极周期会切磁铁产生的、可用于带状电子束宽边聚焦的边聚焦场。结果表明:增加偏置长度,减小电子束通道宽度,增大磁极轴向长度可以在基本不改变边聚焦场在x方向上分布特性的前提下提高幅值;增大电子束通道的高度,增大磁极厚度均可以减小边聚焦场在x方向上分布曲线的曲率,但同时其幅值也会降低,该降低可利用前述方法予以补偿。在对带状电子束宽边聚焦进行束匹配时,可以先进行曲率匹配,再进行幅值匹配。在进行参数选择时,应合理选择束通道高度和磁极厚度的取值,以避免束通道内的边聚焦场在x方向上的分布出现曲率反向。     

基于测试线法的风轮近尾迹辐射噪声研究

在风洞开口实验段,针对不同尖速比应用BSWA VS302USB振动噪声采集分析系统对水平轴风力机叶尖下游4个角度的测试线进行噪声测试.叶尖辐射声中的主要成分是叶片的旋转谐波声,其向风轮下游传播的过程中迅速衰减.在各测试线上,随着测点向风轮下游移动,叶轮辐射声迅速衰减,并在一定距离之后低于背景声,尖速比越高,风轮下游辐射...