Performance analysis of overlay cognitive NOMA network with imperfect SIC and imperfect CSI

In this paper, we investigate a multiple users cooperative overlay cognitive radio non-orthogonal multiple access (CR-NOMA) network in the presence of imperfect successive interference cancellation (SIC) and imperfect channel state information (CSI). In the context of cellular network, cell-center cognitive secondary users act as relays to assist transmission from the primary user (PU) transmitter to the cell-edge PU receiver via NOMA. According to the received signals between the primary transmitter and multiple cognitive secondary center users, the best cell-center cognitive SU with the maximum signal to noise ratio (SNR) is selected to transmit the PU’s signals and its own signal to cell-edge users through NOMA principle. Then, the PU cell-edge user combine the signals received from direct transmission in the first phase and relay transmission from the best cell-center cognitive SU in the second phase by selection combining (SC). To measure the performance of the system quantitatively, we derive the end-to-end outage probability and capacity for the primary and secondary networks by taking the imperfect SIC and CSI into consideration. Finally, the performance analysis is validated by the simulations, and show that serious interference caused by imperfect SIC and (or) imperfect CSI reduce the system performance.     

空间高层大气遥感远紫外成像光谱仪的光学系统

空间高层大气遥感远紫外成像光谱仪主要用于观测高层大气中的远紫外辐射和实现对其内部中尺度现象成像的功能。目前我国该类的相关仪器研究基础还比较薄弱,针对这种情况,在光学系统设计的角度上给出了一种适用于130～180nm波段探测的光学系统方案。该成像光谱仪光学系统以离轴抛物镜为物镜,串联Wadsworth结构为成像光谱系统;这种串联Wadsworth成像光谱系统采用离轴抛物镜做准直镜,分光器件为平面光栅和球面光栅串联,实现二次色散,同时球面光栅起到聚焦成像作用;在像差理论的基础上,对该结构的光程函数和各像差进行了分析,获得了改进结构的宽波段完善成像条件。针对低轨空间探测应用要求设计了相关改进型Wadsworth结构成像光谱仪光学系统,设计结果证明系统像差得到了充分校正,在奈奎斯特频率(20lp/mm)下全视场全波段调制传递函数值在0.6以上。该优化结构同时具备高空间分辨率和高光谱分辨率,性能优越。     

Dislocation content of geometrically necessary boundaries aligned with slip planes in rolled aluminium

Previous studies have revealed that dislocation structures in metals with medium-to-high stacking fault energy, depend on the grain orientation and therefore on the slip systems. In the present work, the dislocations in eight slip-plane-aligned geometrically necessary boundaries (GNBs) in three grains of near 45° ND rotated cube orientation in lightly rolled pure aluminium are characterized in great detail using transmission electron microscopy. Dislocations with all six Burgers vectors of the ½?1?1?0? type expected for fcc crystals were observed but dislocations from the four slip systems expected active dominate. The dislocations predicted inactive are primarily attributed to dislocation reactions in the boundary. Two main types of dislocation networks in the boundaries were identified: (1) a hexagonal network of the three dislocations in the slip plane with which the boundary was aligned; two of these come from the active slip systems, the third is attributed to dislocation reactions (2) a network of three dislocations from both of the active slip planes; two of these react to form Lomer locks. The results indicate a systematic boundary formation process for the GNBs. Redundant dislocations are not observed in significant densities.     

In-situ and ex-situ study of crystallization behaviour of magnetron sputtered Ni63Zr37 amorphous thin film

ABSTRACT

The stages of crystallization of magnetron sputter-deposited Ni₆₃Zr₃₇ film with mostly amorphous structure have been investigated by differential scanning calorimetry (DSC) and in-situ annealing at 300°C by use of heating stage on a high-resolution transmission electron microscope (HRTEM). These results have been further confirmed by grazing incidence X-ray diffraction analyses of thin film specimens annealed ex-situ at 300°C for various durations. The temperature for crystallization found by DSC has been found to increase from 371°C to 434°C with an increase in heating rate from 3°C/min to 10°C/min, and the apparent activation energy for amorphous to crystalline transformation has been found as ～260.2?kJ/mol from the Kissinger plot. Studies on HRTEM using in-situ heating stage have shown the crystallization to occur on annealing at 300°C for ～10?min. Crystallization at a temperature lower than that found by DSC is attributed to structural relaxation with reduction of free volume due to thermal activation. It has been observed that Ni₃Zr forms first due to its large negative enthalpy of formation, and is followed by the formation of Ni-rich solid solution (Ni_ss) grains. HRTEM studies have shown grain rotation with the formation of partial dislocations at Ni₃Zr-Ni_ss interfaces as well as twinning followed by detwinning with dislocation formation in the Ni_ss matrix possibly to reduce the interfacial energy.     

Effect of hydrogen introduced by channelling implantation on the microstructures in silicon wafers

High-resolution transmission electron microscopy has been employed to study the platelet defects before annealing and the extended defects generated by annealing in the channelling-implanted silicon wafers. It has been found that there apparently appear platelet defects of quite great size and spacing at the maximum projected range of ions (R _max). Additionally, the cracks induced by annealing at 550 °C are generated around R _max instead of the average projected range of ions (R _p) as it is in the non-channelling-implanted samples. Moreover, after annealing at 1000 °C, cracks without branches and cavities arranging in a single array, different from the forked cracks and cavities arranged in several arrays in the non-channelling-implanted samples, are observed in the channelling-implanted silicon wafers. It is suggested that those special microstructure characteristics are ascribed to the channelling effect of implanted hydrogen ions.     

Viscoelastic boundary stabilization for a transmission problem in elasticity

We consider an anisotropic body which is constituted of twodifferent types of materials supporting a memory boundary conditionand we show that its energy decays uniformly as time goes toinfinity with the same rate as the relaxation function g, thatis, the energy decays exponentially when g decays exponentially,and polynomially when g decays polynomially.     

电子辐照诱发固态相变导致的氮化硼纳米结构生长

报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词： 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物