A THEORY OF CLASSICAL SPACETIME (I)—FOUNDATIONS

Despite its beauty and grandeur the theory of GR still appears to be incomplete in thefollowing ways:(1)It cannot accommodate the asymmetric total energy momentum tensor whoseasymmetry has been shown to exist in the presence of electromagnetism.(2)The law of angular momentum balance as an exact equation is not an automaticconsequence of the field equations as is the case with the law of linear momentum balance.(3)The four degrees of arbitrariness left by the contracted second Bianchi identitymakes a unique solution of the field equations unattainable without extra (unphysical)postulates.To answer the challenge posed by the above assertions we propose in this paper tocomplete Einstein’s theory by postulating the principle fibre bundle P[M,SU(2)]for theunderlying geometry of the 4-dimensional spacetime,where the structre group SU (2) isthe real representation of the special complex unitary group of dimension 2. SU (2) leavesconcurrently invariant the metric form dS~2=g_(αβ)dx~αdx~β and the fundamenta     

进口附面层厚度对大转角弯叶片损失的影响

进口附面层厚度对大转角弯叶片损失的影响韩万今，吕红卫，芦文才，王仲奇（哈尔滨工业大学哈尔滨１５０００１）关键词：进口附面层，大转角，弯叶片叶片损失来源于两方面：一是进口附面层带来的“原”损失，二是绕流叶栅产生的新损失。二次流引起“原”损失重新分布，并...     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。     

阿尔芬波加热研究的进展

本文概述了阿尔芬波加热的理论和实验情况。讨论了阿尔芬波加热的基本物理问题,并介绍了某些重要的实验结果。对在大托卡马克上采用阿尔芬波加热的可能性进行了全面论述。     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型     

竖直恒温面自然对流边界层不稳定性研究

在无扰动、随机式扰动以及正弦式扰动下,通过对竖直恒温面处状态Ra为1.328×10^9、Pr为6.24的自然对流进行模拟,探索了热边界层的不稳定性和共振强化自然对流换热。结果表明:(1)竖直自然对流边界层上游位置的随机式扰动对热边界层的影响主要体现在稳定阶段;(2)该状态下的竖直自然对流边界层的特征频率为15 067,且相比于无扰动状态,频率为15 067的正弦式扰动能在竖直恒温面处提高5.15%的换热量;(3)在竖直自然对流边界层上游位置加入特征频率的正弦式扰动,竖直恒温面处的局部努塞尔数Nu均出现明显波动,且波动随着边界层高度的增加而增大。     

HL-1装置脱离等离子体及边界等离子体杂质辐射的观测

首次用三道光纤探测器,伸入HL-1装置内真空室,采集活动石墨孔栏处等离子体光信号,用22m石英长光纤传输光信号至控制室进行观测。通过边界等离子体H_α和杂质辐射的时空分布,初步探讨了HL-1装置的脱离等离子体。     

水准折光及双波长激光效应

本文从“同温度层不完全平行于地面,且在变化”的“任意分层”假设出发,导出了水准折光修正公式,并利用光的色散效应在10~(-6)的精度要求下,求得r=r_T=h_1/h_2=(n_(01)-1)/(n_(02)-1)=常数最后指出,研制双波长激光水准仪的必要性和可能性,并提出了研制此种仪器的技术参数.     

CO oxidation of bare and TiO2-coated NiO-Ni(OH)2 nanoparticles

CO oxidation reactivity of bare and TiO₂-coated nanoparticles consisting of both NiO and Ni(OH)₂ surfaces was studied. For the deposition of TiO₂, atomic layer deposition was used, and formation of three-dimensional domains of TiO₂ on NiO-Ni(OH)₂ could be identified. Based on the data of X-ray Photoelectron Spectroscopy, we suggest that upon TiO₂ deposition only Ni(OH)₂ was remained on the surface, whereas NiO surface disappeared. Both CO adsorption and CO oxidation took place on NiO-Ni(OH)₂ surfaces under our experimental conditions. CO adsorption was almost completely suppressed after TiO₂ deposition, whereas CO oxidation activity was maintained to large extent. It is proposed that bare NiO cannot be active for CO oxidation, and can only uptake CO under our experimental condition, whereas hydroxylated surface of NiO can be active for CO oxidation.     

Development of a novel high speed (electron-mobility) epi-n-ZnO thin films by L-MBE for III–V opto-electronic devices

Intrinsic epitaxial zinc oxide (epi-ZnO) thin films were grown by laser-molecular beam epitaxy (L-MBE), i.e., pulsed laser deposition (PLD) technique using Johnson Matthey “specpure”-grade ZnO pellets. The effects of substrate temperatures on ZnO thin film growth, electrical conductivity (σ), mobility (μ) and carrier concentration (n) were studied. As well as the feasibility of developing high quality conducting oxide thin films was also studied simultaneously. The highest conductivity was found for optimized epi-ZnO thin films is σ=0.06×10³ ohm⁻¹ cm⁻¹ (n-type) (which is almost at the edge of semiconductivity range), carrier density n=0.316×10¹⁹ cm⁻³ and mobility μ=98 cm²/V s. The electrical studies further confirmed the semiconductor characteristics of epi-n-ZnO thin films. The relationship between the optical and electrical properties were also graphically enumerated. The electrical parameter values for the films were calculated, graphically enumerated and tabulated. As a novelty point of view, we have concluded that without doping and annealing, we have obtained optimum electrical conductivity with high optical transparency (95%) for as deposited ZnO thin films using PLD. Also, this is the first time that we have applied PLD made ZnO thin films to iso-, hetero-semiconductor–insulator–semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) window layer. We hope that surely these data be helpful either as a scientific or technical basis in the semiconductor processing.