时间分辨光子计数系统的研究和应用

对由SPCM-AQR-14和MCS组成的时间分辨光子计数系统进行了研究,分析了SPCM和MCS的工作原理及主要特性.利用该系统对磷光物质和洋葱的延迟发光进行了测量,对它们的光子计数率曲线进行拟合,发现其光强衰减符合双曲线规律.     

蓝色有机发光材料LiBq4的合成及其发光特性

蓝色有机发光材料的开发对于实现有机发光二极管(OLED)的全彩色化具有十分重要的意义.报道了蓝色有机发光材料8-羟基喹啉硼化锂(LiBq₄)的合成及提纯,研究了LiBq₄的光致发光特性,并用LiBq₄作为发光材料制备了蓝色有机发光器件,研究了电子传输层Alq₃的厚度及空穴缓冲层CuPc对器件电流-电压和亮度-电压特性的影响.结果表明,LiBq₄的光致发光峰值波长为452nm,器件ITO/PVK:TPD/LiBq₄/Alq₃/Al的电致发光光谱峰值波长位于475nm处,在25V工作电压下其最高亮度约为430cd/m².但CuPc的加入加剧了器件中载流子的不平衡注入,导致器件性能恶化.通过调整Alq₃的厚度,同时在Alq₃和Al阴极之间加入LiF薄膜以提高电子注入效率,获得了较为理想的实验结果.     

用于白光LED的高亮度蓝白色荧光粉Ca2SiO3Cl2：Eu2+的发光性质

采用固相法在较低温度下合成了Eu²⁺激活的Ca₂SiO₃Cl₂高亮度蓝白色发光材料,并对其发光性质进行了研究。其发射光谱由两个谱带组成,峰值分别位于420,498nm处,归结为Ca₂SiO₃Cl₂晶体中占据两种不同Ca²⁺格位的Eu²⁺离子的5d→4f跃迁发射。改变Eu²⁺浓度,可以使样品的发光在蓝白色和绿白色之间变化。当Eu²⁺浓度为0.005mol^-1时,样品呈现很亮的蓝白色发光。两个发射峰的激发光谱均分布在250~410nm的波长范围内,峰值分别位于333,369nm处。Ca₂SiO₃Cl₂:Eu²⁺可被InGaN管芯产生的近紫外辐射有效激发,是一种性能良好的白光LED用单一基质蓝白色荧光粉。     

稀土氟化物Y0.97Er0.03F3纳米材料的制备及上转换发光

通过燃烧法和控温热反应法制备了稀土氟化物纳米材料，利用XRD和TEM对样品进行了分析和表征。测量了发射波长为980nm激光二极管激发下所得纳米材料的上转换发光性质。     

Growth Behavior of CdS Nanoparticles Embedded in Polymer and Sol-Gel Silica Matrices: Relationship with Surface-State Related Luminescence

Chemical techniques were employed to synthesize CdS nanoparticles embedded in polymer (PEG 300) and sol-gel silica matrices. Systematic growth of particles (radius 3–9 nm) was obtained by adjusting post-deposition annealing temperature and time to examine the dependence of surface-state–related luminescence on particle size. Photoluminescence (PL) peak energy showed a linear dependence with a gentle slope in the weak confinement region and a steep slope in the strong confinement region, the divergence being observed near the excitonic Bohr radius for CdS. The empirical relation proposed for the weak confinement region could be used for estimating chemically prepared CdS nanoparticle size with a high degree of reliability from PL peak energy.     

Anisotropic emission of interface fluctuation quantum dots

We calculate energy levels, dipole moments and radiative broadening of interface fluctuation quantum dots. For optically allowed states, the dipole moment grows proportionally to the lateral quantum dot radius while the radiative broadening saturates towards the quantum well radiative broadening for large lateral quantum dot radii. This is accompanied by a change in the angular emission pattern, concentrating emission in forward and backward direction. Optically forbidden states do not couple to light propagating in the growth direction yet they may have a considerable radiative broadening due to spontaneous emission in other directions. Received 20 March 2002 Published online 25 June 2002     

Luminescence Properties of New Fused Benzothiophene Derivatives and Their Conductive Oligomers Structural and Solvent Effects

The structural and solvent effects on the electronic absorption and fluorescence spectra, and fluorescence quantum yields, of four new fused benzothiophene derivatives, including benzothieno[3,2b]-thiophene (BTT), benzothieno[3,2-b]benzothiophene (BTBT), 6-methoxy[1]benzothieno[3,2b]-thiophene (MeOBTT), and benzothieno[3,2-b]indole (BTI) were investigated at 295 K. The luminescence properties of the corresponding conductive oligomers, poly(BTT) and poly (MeOBTT), electrosynthesized in acetonitrile, were also studied. Satisfactory McRae, Suppan, and Kawski-Chamma-Viallet solvatochromic correlations were established for the four monomers in most solvents. A weak negative solvatochromic behavior was found for these compounds, indicating that their dipole moments are slightly lower in the excited singlet state than in the ground state. Kamlet-Abboud-Taft multiparametric correlations were also obtained for absorption and fluorescence wave numbers and quantum yields, demonstrating the existence of specific solute-solvent interactions. In the case of the oligomers, important red-shifts of the fluorescence emission maxima ( 90–110 nm) relative to the corresponding monomers were observed, which shows the extent of conjugated segments in the oligomer chains.     

Preparation, Luminescence Properties, and Application of Scintillators Based on Lu3Al5O12:Ce Single‐Crystal Films

The possibility of obtaining scintillators with a high effective atomic number of the element Z _ef based on Lu₃Al₅O₁₂:Ce³⁺ singlecrystal films (SCF) on doping with La³⁺ and Sc³⁺ ions on Y₃Al₅O₁₂ substrates has been investigated. It is established that the SCF of (LuLaY)₃Al₅O₁₂:Ce³⁺ (Z _ef = 58.9 and = 6.67 g/cm²) does not rank below those of Y₃Al₅O₁₂:Ce³⁺ (Z _ef = 29 and = 4.52 g/cm²) in the conversion efficiency of radiation at the band with _max = 515 nm. This allows their use as screens of xray images with a space resolution of 0.75–1.00 m. It is suggested that in the SCF of Lu₃Al₅O₁₂ the isoelectronic impurities of lanthanum and scandium form radiative recombination centers of the type La_Lu, Sc_Lu, and ScAl as well as the centers Lu as a consequence of the effect of replacement of some Lu³⁺ ions by the La³⁺ ions to octanodes of the garnet lattice. The low efficiency of Ce³⁺ radiation in the SCF of (LuSc)₃(AlSc)₅O₁₂:Ce is explained by substantial losses due to excitation of the recombination luminescence in the UV region of the centers formed by the isoelectronic impurities of scandium and to the possible existence of the channel of energy excitation dissipation related to the transitions between extrema of the allowed energy bands and activator levels.     

The Dependence of IRSL Intensity on Radiation Dose for Samples of Chlorides Contained in Feldspars

The intensity of the luminescence generally increases with radiation dose and measurement of these phenomena can be used to characterise the degree of dependence on beta doses. In this study, in order to test whether this is a significant problem on the optically stimulated luminescence (OSL) studies, the radiation dose response of the OSL signal from samples of chlorides contained in feldspars have been investigated by irradiating the samples with beta doses. The infrared-emitting diodes were used with a wavelength of (880±80) nm, and an IRSL (infrared stimulated luminescence) intensity parametres, m, was described and found m = 1±0.03.     

HoYb:YVO4的上转换发光研究

研究了960nm激光激发下HoYb双掺钒酸钇晶体HoYb:YVO4的直接上转换增敏发光,发现了Ho3+离子的上转换发光现象,HoYb:YVO4晶体的上转换发光是5F5→5I8最强,而5S2→5I8相对小了一个数量级,这是由于YVO4晶体既有很强的振子强度又有很大的多声子无辐射弛豫造成的. 关键词： 上转换发光 直接增敏(敏化) 钒酸钇YVO4晶体 Ho3+离子