Surface analysis of thermally annealed porous silicon

Quasi-monocrystalline porous silicon (QMPS) has high potential for photovoltaic application for its enhanced optical absorption compared to bulk silicon in the visible range of solar spectrum. In this study, QMPS was formed from low porosity (∼20-30%) porous silicon (PS) produced by electrochemical anodization, and thermal annealing in the temperature range 1050-1100 °C under pure hydrogen ambient for a duration of 30 min. We analyzed the material surface by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and dynamic secondary ion mass spectroscopy (SIMS) study. The crystallinity was confirmed by GIXRD while FESEM studies revealed that the surface layer is pore free with voids embedded inside the body. AFM studies indicated relatively smooth and uniform surface and the dynamic SIMS study showed the depth profiles of impurities present in the material.     

Ambient dependence of visible emissions in SrTiO3

We investigated the visible emission property of SrTiO₃ (STO) single crystals with high temperature annealing in some ambient conditions. We found that the green emission in STO, which should be associated with intermediate states originating from functional ionic defects inside the samples, such as cation/oxygen vacancies, showed strong ambient dependence. While high temperature annealing in the O₂ atmosphere suppressed the intensity of visible emission, annealing in an O₂-free atmosphere, such as N₂ or H₂, increased it. The broad visible emissions were fitted with three sub-modes, whose intensities showed different evolutions with respect to the ambient condition. Our study demonstrated the systematic development of defect states with the amount of the oxygen vacancies in STO.     

Insights into the Structure and Energy of DNA Nanoassemblies

Since the pioneering work of Ned Seeman in the early 1980s, the use of the DNA molecule as a construction material experienced a rapid growth and led to the establishment of a new field of science, nowadays called structural DNA nanotechnology. Here, the self-recognition properties of DNA are employed to build micrometer-large molecular objects with nanometer-sized features, thus bridging the nano- to the microscopic world in a programmable fashion. Distinct design strategies and experimental procedures have been developed over the years, enabling the realization of extremely sophisticated structures with a level of control that approaches that of natural macromolecular assemblies. Nevertheless, our understanding of the building process, i.e., what defines the route that goes from the initial mixture of DNA strands to the final intertwined superstructure, is, in some cases, still limited. In this review, we describe the main structural and energetic features of DNA nanoconstructs, from the simple Holliday junction to more complicated DNA architectures, and present the theoretical frameworks that have been formulated until now to explain their self-assembly. Deeper insights into the underlying principles of DNA self-assembly may certainly help us to overcome current experimental challenges and foster the development of original strategies inspired to dissipative and evolutive assembly processes occurring in nature.     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.     

金属有机物化学气相沉积法生长Ga2（1-x）In2xO3薄膜的结构及光电性能研究

采用金属有机物化学气相沉积（MOCVD）法在蓝宝石（0001）衬底上制备出了Ga_2（1-x）In_2xO₃（x=01—09）薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明：当In组分x=02时,样品为单斜β-Ga₂O₃结构;x=05的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善 关键词： 金属有机物化学气相沉积 2（1-x）In_2xO₃薄膜')" href="#">Ga_2（1-x）In_2xO₃薄膜 蓝宝石衬底 退火     

Bounds on absorption times of directionally biased random sequences

A sequence of random variables X₀,X₁, … with values in {0, 1, …, n} representing a general finite-state stochastic process with absorbing state 0 is said to be directionally biased towards 0, if, for all j > 0, ϵ_j: = inf_k>0 {j − E[X_k | X_k−1 = j]} > 0. For such sequences, let t be the expected value of the time to absorption at 0. For a fixed set of biases, the least upper bound for this time can be computed with an algorithm requiring O(n²) steps. Simple upper bounds are described. In particular, t ≤ E[b_x0], where b_i = Σ_j≤i 1/¯ϵ_j and ¯ϵ_j = min_l≥j {ϵ_l}. If all ϵ_j ≤ ϵ_{j + 1} (so ¯ϵ_j = ϵ_j) and ϵ_n < 1, this bound for t is the best possible. For certain finite stochastic processes which we term conditionally independent of X₀ = i, b(i) bounds the expected time given X₀ = i. Similar results are given for lower bounds. The results of this paper were designed to be a useful tool for determining rates of convergence of stochastic optimization algorithms. © 1996 John Wiley & Sons, Inc.     

一类连续函数模拟退火算法及其收敛性分析

高维连续函数的全局优化问题普遍存在于计算生物学、计算化学等领域．针对这类问题和现有连续函数模拟退火算法的某些不足,本文给出了一类改进的模拟退火算法．采用一种简单的方法证明了算法的全局收敛性．数值结果表明,对于高维连续函数,该算法能够快速有效地收敛到全局最优点,比较了两种新解产生方法的试验结果。     

Magnetic force microscopy characterization of heat and current treated Fe40Ni38Mo4B18 amorphous ribbons

The domain structure of a magnetostrictive Fe₄₀Ni₃₈Mo₄B₁₈ amorphous ribbon has been studied using magnetic force microscopy (MFM) at room temperature. First, the evolution of the magnetic domain patterns as a function of the annealing temperature has been investigated. In samples heat treated at 250 and 450 °C for 1 h, a transformation from 90° to 180° domain wall has been clearly observed, while the sample heat treated at 700 °C for 1 h showed a magnetic phase fixed by the crystalline anisotropy. Additionally, the evolution of the magnetic domain structure by applying a DC current was recorded by the MFM technique. For current annealed samples at 1 A for 1, 30 and 60 min, a transformation between different domain patterns has been observed. Finally, in samples treated by the current annealing method under simultaneous stress, an increase of the annealing time gives rise to a different magnetic structure arising from the development of transverse magnetic anisotropy.     

Effects of thermal annealing on structural and magnetic properties of thin Pt/Cr/Co multilayers

Thermal stability of thin Pt/Cr/Co multilayers and the subsequent changes in their structural, magnetic, and magneto-optical properties are reported. We observe CoCrPt ternary alloy phase formation due to annealing at temperatures about 773 K, which is accompanied by enhancement in the coercivity value. In addition, 360° domain wall superimposed on a monodomain like background has been observed in the pristine multilayer, which changes into a multidomain upon annealing at 873 K.     

Improvement of photoluminescence mechanism of CTA-treated Si-implanted SiO2 films by using RTA

In this paper, a shift in the photoluminescence (PL) peak from blue to near-infrared region was observed in the Si⁺-implanted 400-nm-thick SiO₂ films with the rapid thermal annealing (RTA) method only. As the Si⁺-fluence was 1×10¹⁶ ions/cm², a blue band was observed in the films after RTA at 1050 °C for 5 s in dry-N₂ atmosphere; then, the band shifted from blue to orange upon increasing the holding temperature of RTA to 1250 °C in the films after the isochronal RTA in dry N₂. Furthermore, while the fluence was increased to 3×110¹⁶ ions/cm² and the holding temperature was at the same range between 1050 and 1250 °C, the PL peak occurred between red and near-infrared regions. Although the RTA and conventional thermal annealing (CTA) methods produce a similar mechanism, the CTA method needs a much longer annealing-time and a higher Si⁺-implanted dose than the RTA method for producing the same shift and intensity of PL peak from the as-implanted sample. Therefore, the RTA method can produce the mechanism in the Si⁺-implanted sample with the PL energy between blue and near-infrared band in place of the CTA method.