Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.     

Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition

Based on X-ray photoelectron spectroscopy (XPS), influences of different oxidants on band alignment of HfO₂ films deposited by atomic layer deposition (ALD) are investigated in this paper. The measured valence band offset (VBO) value for H₂O-based HfO₂ increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O₃-based HfO₂ decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H₂O-based and O₃-based HfO₂ films after annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO₂ and SiO₂ after annealing may lead the VBO values of H₂O-based and O₃-based HfO₂ to vary in different ways, which is in agreement with the varition of flat band (V_FB) voltage.     

Distributed automated docking of flexible ligands to proteins: Parallel applications of AutoDock 2.4

Summary AutoDock 2.4 predicts the bound conformations of a small, flexible ligand to a nonflexible macromolecular target of known structure. The technique combines simulated annealing for conformation searching with a rapid grid-based method of energy evaluation based on the AMBER force field. AutoDock has been optimized in performance without sacrificing accuracy; it incorporates many enhancements and additions, including an intuitive interface. We have developed a set of tools for launching and analyzing many independent docking jobs in parallel on a heterogeneous network of UNIX-based workstations. This paper describes the current release, and the results of a suite of diverse test systems. We also present the results of a systematic investigation into the effects of varying simulated-annealing parameters on molecular docking. We show that even for ligands with a large number of degrees of freedom, root-mean-square deviations of less than 1 Å from the crystallographic conformation are obtained for the lowest-energy dockings, although fewer dockings find the crystallographic conformation when there are more degrees of freedom.The AutoDock 2.4 suite is written in ANSI C, and is supplied with Makefiles for the following platforms: Convex, DEC Alpha OSF/1, Hewlett-Packard Precision Architecture, Silicon Graphics, and Sun. The AutoDock suite of programs is freely available to the noncommercial scientific community and to educational establishments. Further information, including additional figures and MPEG animations showing all docked conformations for each test system, can be found at the following URL: http://www.scripps.edu/pub/olson-web/doc/autodock.     

Lamellar thickening in nascent poly(acrylonitrile) upon annealing

No systematic study has been reported on the lamellar thickening in atactic poly(acrylonitrile) (PAN) upon annealing because PAN, in the form of solution‐cast films or their drawn products, generally shows no small‐angle X‐ray scattering (SAXS) maximum corresponding to the lamellar thickness. In this work, PAN crystals were precipitated during the thermal polymerization of acrylonitrile in solution. The nascent PAN film, obtained by the filtration of the crystal suspension, exhibited a clear SAXS maximum revealing the lamellar structure. The lamellar thickening upon annealing of the nascent PAN films was studied in the temperature range 100–180 °C, where the degradation was minimal, as confirmed by the absence of an IR absorption band at 1605 cm⁻¹ ascribed to the cyclized nitrile groups. Above 190 °C, the degradation of the samples was significant, and the SAXS became too broad to determine the scattering maximum. The long period was significantly affected by the annealing time (t_a) and the temperature (T_a). Depending on t_a, three stages were observed for the lamellar thickening behavior. The lamellar thickness stayed constant in stage I (t_a = 0.5–3 min, depending on T_a), rapidly increased in stage II (t_a = 0.5–8 min), and stayed at a constant value characteristic for each T_a at yet longer t_a's in stage III. The lamellar thickness characteristic for T_a increased rapidly with increasing T_a at 165 °C (or higher), which was 152 °C lower than the estimated melting temperature of PAN (T_m = 317 °C). A possible mechanism for such lamellar thickening in PAN far below the T_m is discussed on the basis of the enhanced chain mobility in the crystalline phase above the crystal/crystal reversible transition at 165–170 °C detected by differential scanning calorimetry and wide‐angle X‐ray diffraction. The structural changes associated with annealing are also discussed. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 38: 2571–2579, 2000     

脱水KFI沸石中钾离子分布的模拟退火研究

基于四个固定的参量设值：阳离子位能差E_M2-E_M1=25.50 kJ/mol、 E_M3-E_M1=-10.73 kJ/mol和最近邻阳离子对互作用能W₁₂=45.6 kJ/mol、 W₁₄=0.56 kJ/mol以及一个温度依赖的参量E_M4-E<     

Azine bridged silver coordination polymers: Powder X-ray diffraction route to crystal structure determination of silver benzotriazole

In continuation of our interest in solid-state structures of silver complexes of photographic importance, the structure for silver benzotriazole (AgBZT), has now been obtained. The preferred method for solving crystal structures is via single-crystal X-ray diffraction (XRD). However, for some materials, growing single crystals of appropriate size and quality is often difficult or even impossible. AgBZT is an example of such a silver complex with poor solubility. The usual routes to preparing single crystals using recrystallization from a cooperating solvent resulted in polycrystalline powder samples. We propose a crystal structure for AgBZT, solved from synchrotron X-ray powder diffraction data, using a direct-space Monte Carlo simulated annealing approach. AgBZT crystals are monoclinic, (P2₁/c), with unit cell dimensions, a=14.8052(3) Å, b=3.7498(4) Å, c=12.3495(12) Å, and β=114.200(6)°. The AgBZT complex is constructed from all three of the Benzotriazole (BZT) nitrogens bonding to a separate silver atom. As a consequence of this bonding mode, the structure is a highly cross-linked, coordination polymer.     

基于支持向量机方法的HERG钾离子通道抑制剂分类模型

对human ether-a-gō-gō related genes(HERG)钾离子通道(钾通道)抑制剂,计算了表征分子组成、电荷分布、拓扑、几何结构及物理化学性质等特征的1559个分子描述符.采用Fischer Score(F-Score)排序过滤和Monte Carlo模拟退火法相结合从中筛选与HERG钾通道抑制剂分类相关的分子描述符.采用支持向量机(SVM)方法,分别以IC50=1.0、10.0μmol·L-1为分类标准,建立了三个分类预测模型.对367个训练集分子,用五重交叉验证.得到正、负样本的平均预测精度分别为84.8%-96.6%、80.7%-97.7%,其总的平均预测精度为87.1%-97.2%,优于其它文献报道结果.对97个外部测试集分子,所建三个模型的总样本预测精度在67.0%-90.1%之间,接近或优于其它文献报道结果.     

Oligonucleotide Analogues with Integrated Bases and Backbone. Part 22

The tritylated and silylated self‐complementary A*[s]U*[s]A*[s]U* and U*[s]A*[s]U*[s]A* tetramers 18 and 24 , linked by thiomethylene groups (abbreviated as [s]) between a nucleobase and C(5′) of the neighbouring nucleoside unit were prepared by a linear synthesis based on S‐alkylation of 5′‐thionucleosides by 6‐(chloromethyl)uridines, 7 or 10 , or 8‐(chloromethyl)adenosines, 12 or 15 . The tetramers 18 and 24 were detritylated to the monoalcohols 19 and 25 , and these were desilylated to the diols 20 and 26 , respectively. The association of the tetramers 18 – 21 and 24 – 26 in CDCl₃ or in CDCl₃/(D₆)DMSO 95 : 5 was investigated by the concentration dependence of the chemical shifts for H? N(3) or H₂N? C(6). The formation of cyclic duplexes connected by four base pairs is favoured by the presence of one and especially of two OH groups. The diol 20 with the AUAU sequence prefers reverse‐Hoogsteen, and diol 26 with the UAUA sequence Watson–Crick base pairing. The structure of the cyclic duplex of 26 in CDCl₃ at 2° was derived by a combination of AMBER* modeling and simulated annealing with NMR‐derived distance and torsion‐angle restraints resulting in a Watson–Crick base‐paired right‐handed antiparallel helix showing large roll angles, especially between the centre base pairs, leading to a bent helix axis.     

退火温度对TiO2/CdSe纳米片异质结薄膜光电性能的影响

采用水热法在FTO上制备（001）高活性晶面主导的TiO₂纳米片薄膜,利用循环伏安法在TiO₂纳米片薄膜上沉积CdSe颗粒,制备了TiO₂/CdSe纳米片异质结薄膜。分别在150、250、350、450 ℃,氩气保护气氛中对样品进行退火。利用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、X射线光电子能谱分析仪（XPS）、紫外-可见（UV-Vis）分光光度计以及电化学工作站对不同温度退火后的TiO₂/CdSe纳米片异质结薄膜的微观形貌、晶体结构、光电化学性能进行表征和测试。结果表明：六方相CdSe纳米颗粒均匀包覆在TiO₂纳米片表面,直径30 nm左右;随着退火温度的升高CdSe纳米颗粒长大,形成光滑的CdSe薄膜,且晶化程度提高;TiO₂纳米片表面的Se元素与Cd元素发生氧化;TiO₂/CdSe纳米片异质结薄膜对可见光的吸收光谱发生红移,禁带宽度逐渐减小。光电化学性能测试表明随着退火温度的升高,TiO₂/CdSe纳米片异质结薄膜的光电流密度显著提高,开路电压减小,但由于SeO2和CdO的出现,导致填充因子减小,影响光电转换效率的提高。在本实验条件下,TiO₂/CdSe纳米片异质结薄膜的最佳退火温度为150 ℃,填充因子为0.77,光电转换效率达到3.12%。