半导体单晶生长过程中的位错研究

阐述了现有的半导体单晶位错模型,即临界切应力模型和粘塑性模型的基本理论及应用状况.分析了熔体法单晶生长过程中影响位错产生、增殖的各种因素,以及抑制位错增殖的措施.与熔体不润湿、与晶体热膨胀系数相近的坩埚材料,低位错密度的籽晶可有效地抑制生长晶体的位错密度;固液界面的形状及晶体内的温度梯度是降低位错密度的关键控制因素,而两因素又受到炉膛温度梯度、长晶速率、气体和熔体对流等晶体生长工艺参数的影响.最后,对熔体单晶生长过程的位错研究进行了展望.     

ZnO纳米棒在Si衬底上外延生长研究

运用热蒸发ZnO粉末法,以金做催化剂,分别在Si(100)和Si(111)两种基片上外延生长了ZnO纳米棒(样品分别标为1#和2#).通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,结合ZnO与Si的晶格结构特征,从理论上得出了两个样品的晶格匹配关系.1#样品:[0001]ZnO∥[114]Si,[0001]ZnO∥[1-1-4]Si,[0001]ZnO∥[11-4]Si,[0001]ZnO∥[1-14]Si,失配度为1.54;;2#样品:[0001]ZnO∥[111]Si,[21-1-0]ZnO∥[11-0]Si,[1-21-0]ZnO∥[1-01]Si ,[1-1-20]ZnO∥[011-]Si,失配度为18.12;.研究表明Si衬底对ZnO纳米棒生长方向具有调控作用.     

BaY2F8晶体生长基元与结晶机理的探讨

本文通过对BaY2F8晶体结构的分析,从晶体的生长基元为负离子配位多面体理论出发,对自然冷却条件下BaY2F8晶体自发结晶习性进行了研究,提出了以Ba2+为中心的近八配位十二面体和以Y3+为中心的近八配位十二面体是晶体生长的基元.并根据自发结晶的BaY2F8的XRD,说明了BaY2F8晶体的{200}、{130}、{021}、{330}、{-111}、{111}、{221}、{002}等面族比较发育的原因.本文证实了仲维卓的负离子配位多面体理论对BaY2F8晶体生长的适用性,并对探索新的BaY2F8单晶生长方法有参考作用.     

A Simple Hydrothermal Method for the Growth of ZnO Crystals

ZnO microstructures have been grown from zinc chloride (ZnCl₂) and ammonia solution at 100 °C for 1 – 24 hours. X‐ray diffraction, scanning electron microscope and field‐emission scanning microscope were utilized to investigate the structural properties and morphology of the ZnO crystals. Structural investigations show that phase‐pure hexagonal structure ZnO has been successfully synthesized, and the hexagonal structure ZnO can be achieved in solutions with an appropriate range of concentrations. Under our experimental conditions, several different morphologies of ZnO structures were obtained, including flower‐like and bar flower‐like. The relationship between the morphology and experimental conditions are discussed.     

Stationary states of crystal growth in three dimensions

A new Markov process describing crystal growth in three dimensions is introduced. States of the process are configurations of the crystal surface, which has a terrace-edge-kink structure. The states are continuous along edges but discrete across edges, in accordance with the very different rates for the two types of captures of particles. Stationary distributions, describing steady crystal growth, are found in general. To our knowledge, these are the first examples of stationary distributions for layered crystal growth in three dimensions. The steady growth rate and other quantities are obtained explicitly for two interacting edges. For many interacting edges, growth behavior is determined (a) in various asymptotic regimes including thermodynamic limits, (b) via simulations, and (c) using series (cluster) expansions in the slope of the surface, the first three coefficients being computed. The theoretical growth rates show a marked dependence on surface dimensions. This may contribute to the size dependence and dispersion in the observed growth rate of small crystals.     

Poly(amidoamine)s: Past,present, and perspectives

Poly(amidoamine)s (PAAs) are a family of synthetic polymers obtained by stepwise polyaddition of prim‐ or sec‐amines to bisacrylamides. Nearly all conceivable bisacrylamides and prim‐ or sec‐amines can be employed as monomers endowing PAAs of a structural versatility nearly unique among stepwise polyaddition polymers. PAAs are degradable in aqueous media, including physiological fluids. Many of them are remarkably biocompatible notwithstanding their cationic character. PAAs are per se highly functional polymers and, in addition, can be further functionalized giving rise to an endless variety of polymeric structures meeting the requisites for applications in such apparently disparate fields as inorganic water pollutants scavengers, sensors, drug and protein intracellular carriers, transfection promoters, peptidomimetic antiviral and antimalarial agents. In this review, the unique chemistry of PAAs is discussed and a vast library of PAA structures and PAA applications from the beginning to the present days reported. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 2319–2353     

Access to nonisocyanate poly(thio)urethanes: A comparative study

This article describes the synthesis of new cyclic compounds able to react with amines to get nonisocyanate polyurethanes (NIPUs). The contribution of the most studied five‐membered cyclic carbonate was compared to five‐membered cyclic dithiocarbonate analogous and to a six‐membered cyclic carbonate. Difunctional reactive species were obtained by a simple substitution reaction or an efficient thiol–ene coupling reaction. The products, obtained with high yields, were characterized by 1H NMR, 13C NMR, and Fourier tansform infrared spectroscopy analysis. The dicyclocarbonates were then used to synthesize NIPUs by step growth polymerization with several diamines. These materials exhibited glass transition temperatures from 19 to ?29 °C, molar mass from 1800 to 20,400 g mol^?1, and a 20% mass loss temperature (T_d = 20%) between 249 and 296 °C. Such materials are interesting candidates for coating applications. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 3284–3296     

Existence of an Angular Density of Roots of Entire Functions of Order Zero

We obtain sufficient conditions for the set of roots of an entire function of order zero of strongly regular growth to possess an angular density.     

Tangential Limits of Potentials on Homogeneous Trees

Let T be a homogeneous tree of homogeneity q+1. Let denote the boundary of T, consisting of all infinite geodesics b=[b ₀,b ₁,b ₂,] beginning at the root, 0. For each b, 1, and a0 we define the approach region _,a (b) to be the set of all vertices t such that, for some j, t is a descendant of b _j and the geodesic distance of t to b _j is at most (–1)j+a. If >1, we view these as tangential approach regions to b with degree of tangency . We consider potentials Gf on T for which the Riesz mass f satisfies the growth condition _T f ^p (t)q ^–|t|<, where p>1 and 0<<1, or p=1 and 0<1. For 11/, we show that Gf(s) has limit zero as s approaches a boundary point b within _,a (b) except for a subset E of of -dimensional Hausdorff measure 0, where H (E)=sup_>0inf _i q ^{–|t i|}:E a subset of the boundary points passing through t _i for some i,|t _i |>log _q (1/).     

Multiple domain dynamics simulated with coupled level sets

We adapt the level-set method to simulate epitaxial growth of thin films on a surface that consists of different reconstruction domains. Both the island boundaries and the boundaries of the reconstruction domains are described by different level-set functions. A formalism of coupled level-set functions that describe entirely different physical properties is introduced, where the velocity of each level-set function is determined by the value of the other level-set functions.