Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Dynamic and Reversible Accumulation of Plasmonic Core‐Satellite Nanostructures in a Light‐Induced Temperature Gradient for In Situ SERS Detection

A surface‐enhanced Raman spectroscopy (SERS) detection method that allows dynamic on‐demand generation of SERS substrates at locations of interest for in situ molecular sensing is demonstrated. Thermal convection and thermophoresis, which are both generated in a laser‐induced temperature gradient, are used to accumulate suspended plasmonic nanostructures to form 3D SERS substrate. Raman signals of melamine, which is used as a model analyte, increase to ≈117‐fold within 2 min of laser irradiation because of the accumulation. In addition, it is demonstrated that the accumulation of the nanostructures is reversible, and that reproducible SERS effects can be obtained during a repeated heating and cooling process. Because of the capability of on‐demand generation of a high density of SERS hot spots at different locations in solution, this particle manipulation and SERS detection method is applicable to monitor temporal and spatial variations of the concentrations of molecules. The complexity of the detection system remains the same when using this method since all the measurements are performed with a conventional Raman system and simple fluid channels. The required temperature gradient is generated by the laser used to excite Raman signals, and no nanofabricated substrates and complicated microfluidic or optical components are needed.     

基于改进基追踪去噪的水声单载波频域均衡信道估计

针对低信噪比下单载波频域均衡信道估计精度低导致均衡效果差的问题,利用基追踪去噪方法估计稀疏信道有效抽头具有的稳定特性,提出了一种在平稳水声信道条件下单载波频域均衡系统中应用的改进基追踪去噪稀疏信道估计方法。方法利用延拓循环前缀作为导频进行多次信道估计,将估计结果累积平均,再采用门限判决提取有效抽头得到信道估计值,从而提高了稀疏信道的估计精度。通过合理选择循环前缀延拓次数,尽可能地降低导频长度对频带利用率的影响。仿真对比分析了改进基追踪去噪算法与匹配滤波、最小平方以及传统基追踪去噪信道估计算法的性能以及对单载波频域均衡系统误码率的影响。仿真实验结果表明,改进基追踪去噪信道估计算法具有更优的估计精度,在单载波频域均衡系统中可以提高约3 dB的接收信噪比增益。     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).     

沉水植物对受重金属镉、锌污染的水体底泥的修复效果

为了探究常见沉水植物对水体底泥中重金属污染的富集效果,选取浙江水域较为常见的3种沉水植物苦草（Vallisneria natans （Lour.） Hara）、黑藻（Hydrilla verticillata（Linn.f.） Royle）、金鱼藻（Ceratophyllum demersum L.）,在模拟天然水体环境中,将3种沉水植物培养在含有重金属Cd、Zn的底泥中生长一个生活周期.依据沉水植物对重金属Cd、Zn的富集量和生物-沉积物生物富集因子（biota-sediment accumulation factor,BSAF）等指标,筛选出对2种重金属元素富集效果较好的沉水植物,为受重金属污染底泥生态修复的植物选择提供一定的参考.结果表明：3种沉水植物对重金属Cd、Zn的耐受性均较强,同时对重金属Cd、Zn都有较高的富集能力,生物富集因子大于1,对底泥中的Cd、Zn均具有较好的祛除效果;由相关分析可知,3种沉水植物体中的Cd、Zn的质量分数与其根部底泥中Cd、Zn的质量分数呈极显著的负相关（p<0.01）,因此这3种植物均可作为重金属Cd、Zn污染的修复物种.苦草对重金属Cd、Zn的富集量及BSAF均大于黑藻和金鱼藻,对重金属Cd的富集量分别达到了黑藻和金鱼藻的1.90和3.02倍.因此可考虑苦草作为水体底泥Cd、Zn复合污染生态修复的先锋物种.     

颗粒滚动摩擦系数对堆积特性的影响

为探讨颗粒摩擦系数对堆积特性的影响,利用离散单元法,模拟静摩擦系数固定时,变化滚动摩擦系数对椭球形颗粒堆积角及堆积体的影响.利用自制斜面仪测定了颗粒静摩擦系数,并对滚动摩擦系数与堆积角建立线性方程.结果表明,滚动摩擦系数对颗粒堆积特性有显著影响,颗粒堆积角随滚动摩擦系数增大而增大,边界圆与连续圆间的间隙随滚动摩擦系数增大而减小.依据颗粒堆积过程中旋转动能的变化可以阐述上述结果,建立的滚动摩擦系数与堆积角的线性方程可为具体颗粒物料滚动摩擦系数的获取提供数值测量思路.模拟堆积的过程可为散体物料一些不易测量的参数进行虚拟实验标定.     

Steady flow past a torus with aspect ratio less than 5

Steady flow past a torus with an aspect ratio less than 5 and its axis aligned with the flow is studied numerically by solving the steady, axisymmetric Navier–Stokes equations. The wake structure behind tori exhibits diverse behaviours. The detached recirculating zone on the axis, the attached recirculating zone, and the detached recirculating zone behind the torus tube may appear individually or concurrently, depending on the aspect ratio and the Reynolds number. A wake structure map is summarized based on the observed flow behaviours. Six flow regimes with different wake behaviours are identified and the corresponding flow regime map is plotted, which include the no-recirculating-zone regime, the single-detached-recirculating-zone regime, the single-attached-recirculating-zone regime, the two-recirculating-zone regime I, the two-recirculating-zone regime II, and the three-recirculating-zone regime. Over the range of aspect ratio 1.9<AR<2.4, the detached wake initially increases but then decreases in size with Reynolds number, and eventually disappears at Reynolds numbers beyond a critical value (depending on the aspect ratio). The underlying mechanisms of the onset and disappearance of the recirculating zones are discussed in terms of vorticity accumulation and base bleed. The recirculating zone first occurs when the maximum vorticity on the surface of the torus exceeds about 5. The detached recirculating zone on the axis of the torus disappears once the flow rate through the hole of the torus is beyond a certain threshold. In addition, the present results suggest that different transition modes to non-axisymmetric flow for tori with different aspect ratios reported in the literature may result from the wake structures prior to the transition.     

从认知理论看实验能力与创新能力的关系

认知心理学理论认为,人的知识与能力的获得实际上就是信息的加工过程,也即是学习者在能力习得过程的对已有经验的刺激反应过程.大学实验不仅培养学生的动手能力,它也是孕育创新能力的培养课程.实验能力与思维方式、年龄、智商、性别、知识积累和培养方式等诸多因素相关,思维方式与思维路径绝对创新力,反之,借助于创新性实验教学可以提高学生的创造性思维.     

转换反射中光自旋霍尔效应的自旋堆积方向

从理论上和实验上研究了转换反射中光自旋霍尔效应的自旋堆积方向的方法,建立了描述光束在空气-棱镜界面反射的自旋堆积模型,揭示了横移与光束入射偏振角的定性关系。研究发现,当入射角小于布儒斯特角时,随着入射偏振角的逐渐增大,自旋堆积的方向发生反转。而当入射角大于布儒斯特角时,自旋堆积的方向不再随入射偏振角的变化而反转。结果表明,在光束入射角为确定值且小于布儒斯特角的情况下,可以通过调控光束的入射偏振角转换自旋堆积的方向。转换自旋堆积方向的研究为有效调控光自旋霍尔效应提供了新的途径。     

金沙江下咱日堆积体的成因和稳定性初步分析

下咱日堆积体的稳定性对拟建的梨园水电站大坝和附近的水力设施有着重要的意义。利用下咱日堆积体的勘察资料,本文分析后认为下咱日堆积体经历了中更新世的金江冰期和晚更新世的丽江冰期两次冰期的作用,是由冰碛物、河流沉积物、湖相沉积物及崩积物组成的复杂成因堆积体;稳定性初步分析认为,下咱日堆积体局部有坍塌,但是整体稳定,以后稳定与否的关键是堆积体中湖相沉积层及坡脚的松散砾石层的稳定性。